PD - 96222
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for Improved Panel Efficiency
l
High Repetitive Peak Current Capability
l
Lead Free Package
IRGB4086PbF
IRGS4086PbF
Key Parameters
V
CE
min
V
CE(ON)
typ. @ I
C
= 70A
I
RP
max @ T
C
= 25°C
T
J
max
c
300
1.90
250
150
V
V
A
°C
C
G
E
G
C
E
G
C
E
n-channel
G
G ate
TO-220AB
D
2
Pak
IRGB4086PbF IRGS4086PbF
C
C ollector
E
E m itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Max.
±30
70
40
250
160
63
1.3
-40 to + 150
300
10lb in (1.1N m)
Units
V
A
c
W
W/°C
°C
x
x
N
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Weight
d
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.8
–––
40
–––
Units
°C/W
g (oz)
df
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1
02/02/09
IRGB/S4086PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
∆ΒV
CES
/∆T
J
Min.
Typ. Max. Units
–––
0.29
1.29
1.49
1.90
2.57
2.27
–––
-11
2.0
5.0
100
–––
–––
29
65
22
36
31
112
65
30
33
145
98
–––
1075
1432
2250
110
58
5.0
13
Conditions
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
I
CES
I
GES
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Collector-to-Emitter Breakdown Voltag 300
Breakdown Voltage Temp. Coefficient –––
–––
–––
Static Collector-to-Emitter Voltage
–––
–––
–––
Gate Threshold Voltage
2.6
Gate Threshold Voltage Coefficient
–––
Collector-to-Emitter Leakage Current –––
–––
–––
Gate-to-Emitter Forward Leakage
–––
Gate-to-Emitter Reverse Leakage
–––
Forward Transconductance
–––
Total Gate Charge
–––
Gate-to-Collector Charge
–––
Turn-On delay time
—
Rise time
—
Turn-Off delay time
—
Fall time
—
Turn-On delay time
—
Rise time
—
Turn-Off delay time
—
Fall time
—
Shoot Through Blocking Time
Energy per Pulse
100
–––
–––
C
iss
C
oss
C
rss
L
C
L
E
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
–––
V V
GE
= 0V, I
CE
= 1 mA
–––
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 25A
1.55
V
GE
= 15V, I
CE
= 40A
1.67
2.10
V V
GE
= 15V, I
CE
= 70A
V
GE
= 15V, I
CE
= 120A
2.96
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
–––
5.0
V V
CE
= V
GE
, I
CE
= 500µA
––– mV/°C
25
µA V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 100°C
–––
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
–––
100
nA V
GE
= 30V
V
GE
= -30V
-100
–––
S V
CE
= 25V, I
CE
= 25A
–––
nC V
CE
= 200V, I
C
= 25A, V
GE
= 15V
–––
I
C
= 25A, V
CC
= 196V
—
—
ns R
G
= 10Ω, L=200µH, L
S
= 200nH
T
J
= 25°C
—
—
I
C
= 25A, V
CC
= 196V
—
—
ns R
G
= 10Ω, L=200µH, L
S
= 200nH
T
J
= 150°C
—
—
–––
ns V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.40µF, V
GE
= 15V
–––
µJ V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.40µF, V
GE
= 15V
–––
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
V
GE
= 0V
–––
–––
pF V
CE
= 30V
e
e
e
e
e
–––
–––
nH
–––
ƒ = 1.0MHz,
See Fig.13
Between lead,
6mm (0.25in.)
from package
and center of die contact
Notes:
Half sine wave with duty cycle = 0.1, ton=2µsec.
R
θ
is measured at
T
J
of approximately 90°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recomended footprint and soldering techniques refer
to application note #AN-994.
2
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IRGB/S4086PbF
240
200
160
ICE (A)
240
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
200
160
ICE (A)
120
80
40
0
0
4
8
VCE (V)
VGE = 8.0V
VGE = 6.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
120
80
40
0
VGE = 8.0V
VGE = 6.0V
12
16
0
4
8
VCE (V)
12
16
Fig 1. Typical Output Characteristics @ 25°C
240
200
160
ICE (A)
Fig 2. Typical Output Characteristics @ 75°C
240
200
160
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
120
80
40
0
0
4
8
VCE (V)
VGE = 8.0V
VGE = 6.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
120
80
40
0
VGE = 8.0V
VGE = 6.0V
12
16
0
4
8
VCE (V)
12
16
Fig 3. Typical Output Characteristics @ 125°C
240
200
T J = 25°C
160
T J = 150°C
Fig 4. Typical Output Characteristics @ 150°C
10
IC = 25A
8
120
80
40
0
2
4
6
8
10
12
14
16
VGE (V)
VCE (V)
ICE (A)
6
TJ = 25°C
TJ = 150°C
4
2
0
5
10
V GE (V)
15
20
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
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3
IRGB/S4086PbF
80
70
300
Repetitive Peak Current (A)
IC, Collector Current (A)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
200
100
ton= 2µs
Duty cycle = 0.1
Half Sine Wave
0
25
50
75
100
125
150
Case Temperature (°C)
T C, Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
160
170
180
190
200
210
220
230
25°C
VCC = 240V
L = 220nH
C = variable
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1600
1400
L = 220nH
C = 0.4µF
100°C
Energy per Pulse (µJ)
Energy per Pulse (µJ)
100°C
1200
1000
800
600
400
200
150 160 170 180 190 200 210 220 230 240
VCE, Collector-to-Emitter Voltage (V)
25°C
IC, Peak Collector Current (A)
Fig 9. Typical E
PULSE
vs. Collector Current
2000
VCC = 240V
1600
Energy per Pulse (µJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
1000
L = 220nH
t = 1µs half sine
C= 0.4µF
100
IC (A)
1200
10 µs
100 µs
800
C= 0.3µF
10
1ms
400
C= 0.2µF
1
0
25
50
75
100
125
150
TJ, Temperature (ºC)
1
10
V CE (V)
100
1000
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forward Bias Safe Operating Area
4
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IRGB/S4086PbF
10000
25
ID= 25A
VDS = 240V
VDS = 200V
VDS = 150V
VGE, Gate-to-Source Voltage (V)
Cies
20
Capacitance (pF)
1000
15
10
100
Coes
Cres
10
0
100
200
300
5
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
VCE (V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
1
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
D = 0.50
Thermal Response ( ZthJC )
0.20
0.1
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
1
τ
2
τ
3
τ
3
τ
Ri (°C/W)
τι
(sec)
0.01
Ci=
τi/Ri
Ci=
τi/Ri
0.084697 0.000038
0.374206 0.001255
0.341867 0.013676
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
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