AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Avalanche Rectifiers
FEATURES
eSMP
®
Series
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high frequency
• Low reverse current
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
Available
DO-220AA (SMP)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
E
AS
V
F
at I
F
= 1.0 A
T
J
max.
Package
Diode variations
1.0 A
200 V, 400 V, 600 V, 800 V,
1000 V
30 A, 25 A
75 ns
1 μA
20 mJ
1.6 V
175 °C
DO-220AA (SMP)
Single die
MECHANICAL DATA
Case:
DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Non-repetitive avalanche energy
at I
AS
= 1.0 A, T
A
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
30
20
-55 to +175
SYMBOL
AU1PD
AUD
200
AU1PG
AUG
400
AU1PJ
AUJ
600
1.0
25
AU1PK
AUK
800
AU1PM
AUM
1000
V
A
A
mJ
°C
UNIT
Revision: 19-Feb-15
Document Number: 89291
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum reverse current
Maximum reverse recovery time
Typical junction capacitance
TEST CONDITIONS
I
F
= 1.0 A
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F (1)
I
R (2)
t
rr
C
J
11
AU1PD
AU1PG
1.5
1.4
1.0
100
75
7.5
AU1PJ
AU1PK
AU1PM
UNIT
V
1.85
1.6
Rated V
R
μA
ns
pF
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °c unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(1)
AU1PD
AU1PG
AU1PJ
132
15
AU1PK
AU1PM
UNIT
°C/W
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount at the terminal
cathode band
ORDERING INFORMATION
(Example)
PREFERRED P/N
AU1PJ-M3/84A
AU1PJ-M3/85A
AU1PJHM3/84A
(1)
AU1PJHM3/85A
(1)
(1)
UNIT WEIGHT (g)
0.024
0.024
0.024
0.024
PREFERRED PACKAGE CODE
84A
85A
84A
85A
BASE QUANTITY
3000
10 000
3000
10 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
Automotive grade
Revision: 19-Feb-15
Document Number: 89291
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °c unless otherwise noted)
1.2
10
Resistive or Inductive Load
AU1PD thru AU1PJ
Average Forward Rectified Current (A)
Instantaneous Forward Current (A)
1.0
T
A
= 175 °C
0.8
AU1PK thru AU1PM
0.6
T
A
= 125 °C
1
T
A
= 75 °C
0.4
T
M
Measured
at the Cathode Band Terminal
0.2
T
A
= 25 °C
AU1PD thru AU1PJ
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
100
110
120
130
140
150
160
170
180
T
M
- Mount Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 1 - Maximum Forward Current Derating Curve
1.6
10
Instantaneous Forward Current (A)
AU1PD thru AU1PJ
1.4
D = 0.5
D = 0.3
D = 0.8
T
A
= 175 °C
Average Power Loss (W)
1.2
1.0
0.8
0.6
D = 0.1
D = 0.2
D = 1.0
1
T
A
= 125 °C
T
A
= 75 °C
0.1
T
A
= 25 °C
AU1PK thru AU1PM
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
T
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
D = t
p
/T
t
p
Average Forward Current (A)
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
1.6
1000
Instantaneous Reverse Current (μA)
AU1PK thru AU1PM
1.4
D = 0.5
D = 0.3
D = 0.8
T
A
= 175 °C
100
T
A
= 125 °C
10
T
A
= 75 °C
1
T
A
= 25 °C
0.1
AU1PD thru AU1PJ
0.01
10
20
30
40
50
60
70
80
90
100
Average Power Loss (W)
1.2
1.0
0.8
0.6
D = 0.1
D = 0.2
D = 1.0
T
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
D = t
p
/T
t
p
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Typical Reverse Characteristics
Revision: 19-Feb-15
Document Number: 89291
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AU1PD, AU1PG, AU1PJ, AU1PK, AU1PM
www.vishay.com
Vishay General Semiconductor
1000
1000
Instantaneous Reverse Current (μA)
T
A
= 175 °C
100
T
A
= 125 °C
10
T
A
= 75 °C
1
Transient Thermal Impedance (°C/W)
Junction to Ambient
100
10
0.1
T
A
= 25 °C
AU1PK thru AU1PM
0.01
10
20
30
40
50
60
70
80
90
100
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 7 - Typical Reverse Characteristics
Fig. 9 - Typical Transient Thermal Impedance
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction Capacitance (pF)
10
AU1PD thru AU1PJ
AU1PK thru AU1PM
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 8 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-220AA (SMP)
Cathode Band
0.012 (0.30) REF.
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.100
(2.54)
0.025 0.030
(0.635) (0.762)
0.050
(1.27)
Revision: 19-Feb-15
Document Number: 89291
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000