AUTOMOTIVE GRADE
Logic Level
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
AUIRL7736M2TR
Automotive DirectFET
®
Power MOSFET
V
(BR)DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
Q
g (typical)
S
D
G
S
S
S
D
40V
2.2m
3.0m
112A
52nC
Applicable DirectFET
®
Outline and Substrate Outline
SB
SC
Description
M2
M4
M4
DirectFET
®
ISOMETRIC
L4
L6
L8
The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
®
packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
his HEXFET
®
Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET
®
packaging
platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance improvement
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7736M2 can be utilized
together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques
to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
AUIRL7736M2
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRL7736M2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
E
AS
E
AS
(Tested)
I
AR
E
AR
T
P
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
40
±16
112
79
179
22
450
63
2.5
68
119
See Fig. 16, 17, 18a, 18b
260
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-29
AUIRL7736M2TR
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Can
R
J-Can
Junction-to-PCB Mounted
R
J-PCB
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.0
0.42
Max.
60
–––
–––
2.4
–––
Units
°C/W
W/°C
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
––– 0.03 ––– V/°C
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
2.2
3.0
Static Drain-to-Source On-Resistance
R
DS(on)
m
–––
3.2
4.3
V
GS(th)
Gate Threshold Voltage
1.0
1.8
2.5
V
Gate Threshold Voltage Coefficient
––– -6.9
––– mV/°C
V
GS(th)
/T
J
gfs
Forward Transconductance
152
–––
–––
S
R
G
Internal Gate Resistance
–––
0.9
–––
–––
–––
5.0
I
DSS
Drain-to-Source Leakage Current
µA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Q
g
Total Gate Charge
–––
52
78
Q
gs1
Gate-to-Source Charge
–––
8.1
–––
Q
gs2
Gate-to-Source Charge
–––
6.2
–––
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
33
–––
Q
godr
Gate Charge Overdrive
–––
4.7
–––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 39.2 –––
Q
oss
Output Charge
–––
31
–––
nC
t
d(on)
Turn-On Delay Time
–––
48
–––
t
r
Rise Time
–––
210
–––
ns
t
d(off)
Turn-Off Delay Time
–––
56
–––
t
f
Fall Time
–––
76
–––
C
iss
Input Capacitance
––– 5055 –––
C
oss
Output Capacitance
–––
960
–––
C
rss
Reverse Transfer Capacitance
–––
525
–––
pF
C
oss
Output Capacitance
––– 3540 –––
C
oss
C
oss
eff.
Output Capacitance
Effective Output Capacitance
–––
–––
860
1306
–––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 67A
V
GS
= 4.5V, I
D
= 56A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 10V, I
D
= 67A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
Conditions
V
DS
= 20V
V
GS
= 4.5V
I
D
= 67A
See Fig.11
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
I
D
= 67A
R
G
= 6.8
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
Notes
through
are on page 3
2
2015-10-29
AUIRL7736M2TR
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
32
23
112
A
450
1.3
48
35
V
ns
nC
Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 67A, V
GS
= 0V
T
J
= 25°C, I
F
= 67A, V
DD
= 20V
dv/dt = 100A/µs
D
G
S
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Surface mounted on 1 in.
square Cu board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
®
Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.030mH, R
G
= 50, I
AS
= 67A, V
GS
= 20V.
Pulse width
400µs; duty cycle
2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized back and with small clip heat sink.
R
is measured at T
J
of approximately 90°C.
3
2015-10-29
1000
TOP
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
AUIRL7736M2TR
1000
TOP
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
2.5V
10
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
R DS(on) , Drain-to -Source On Resistance ( m)
Fig. 2
Typical Output Characteristics
RDS(on), Drain-to -Source On Resistance (
m)
7
ID = 67A
6
5
4
3
2
T J = 25°C
1
0
2
4
6
8
10
12
14
16
18
5
4
T J = 125°C
3
T J = 125°C
2
T J = 25°C
1
Vgs = 10V
0
0
25
50
75
100 125 150 175 200
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig. 3
Typical On-Resistance vs. Gate Voltage
1000
Fig. 4
Typical On-Resistance vs. Drain Current
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = -40°C
ID = 67A
VGS = 10V
1.5
T J = 25°C
T J = 175°C
10
1.0
1
VDS = 25V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Transfer Characteristics
4
Fig 6.
Normalized On-Resistance vs. Temperature
2015-10-29
3.0
VGS(th) , Gate threshold Voltage (V)
1000
AUIRL7736M2TR
2.5
ISD, Reverse Drain Current (A)
100
2.0
ID = 150µA
TJ = -40°C
TJ = 25°C
T J = 175°C
1.5
1.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
10
VGS = 0V
0.5
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
1.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig. 7
Typical Threshold Voltage vs.
Junction Temperature
250
Gfs, Forward Transconductance (S)
Fig 8.
Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
200
T J = 25°C
C, Capacitance (pF)
10000
150
T J = 175°C
C iss
C oss
100
1000
Crss
50
V DS = 5.0V
380µs PULSE WIDTH
100
0
20
40
60
80
100
120
1
10
VDS , Drain-to-Source Voltage (V)
100
ID ,Drain-to-Source Current (A)
0
Fig 9.
Typical Forward Trans conductance vs. Drain Current
14.0
ID = 67A
VGS, Gate-to-Source Voltage (V)
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage
120
100
ID, Drain Current (A)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
VDS = 32V
VDS = 20V
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VDS = 8.0V
Fig 11.
Typical Gate Charge vs.
Gate-to-Source Voltage
5
Fig 12.
Maximum Drain Current vs. Case Temperature
2015-10-29
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