PD - 95345A
IRF7501PbF
HEXFET
®
Power MOSFET
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Generation V Technology
Ulrtra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
V
DSS
=20V
R
DS(on)
= 0.135Ω
6
5
Top View
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GSM
V
GS
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse tp<10μs
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
20
2.4
1.9
19
1.25
0.8
0.01
16
± 12
5.0
-55 to + 150
240 (1.6mm from case)
Units
V
A
W
W
W/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
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All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
1
02/13/12
IRF7501PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.041
0.085
0.120
–––
–––
–––
–––
–––
–––
5.3
0.84
2.2
5.7
24
15
16
260
130
61
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
0.135
V
GS
= 4.5V, I
D
= 1.7A
Ω
0.20
V
GS
= 2.7V, I
D
= 0.85A
–––
V
V
DS
= V
GS
, I
D
= 250μA
–––
S
V
DS
= 10V, I
D
= 0.85A
1.0
V
DS
= 16V, V
GS
= 0V
μA
25
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 12V
nA
-100
V
GS
= -12V
8.0
I
D
= 1.7A
1.3
nC V
DS
= 16V
3.3
V
GS
= 4.5V, See Fig. 9
–––
V
DD
= 10V
–––
I
D
= 1.7A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 5.7Ω
–––
V
GS
= 0V
–––
pF
V
DS
= 15V
–––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
39
37
1.25
A
19
1.2
59
56
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width
≤
300μs; duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤10sec
I
SD
≤
1.7A, di/dt
≤
66A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
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IRF7501PbF
100
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
100
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
1
1
1.5V
0.1
0.1
0.01
0.1
1.5V
20μs PULSE WIDTH
T
J
= 25°C
A
1
10
0.01
0.1
20μs PULSE WIDTH
T
J
= 150°C
A
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
I
D
, Drain-to-Source Current (A)
10
I
SD
, Reverse Drain Current (A)
10
T
J
= 150°C
T
J
= 25°C
T
J
= 150°C
T
J
= 25°C
1
1
0.1
1.5
2.0
2.5
V
DS
= 10V
20μs PULSE WIDTH
3.0
3.5
4.0
A
0.1
0.4
V
GS
= 0V
0.6
0.8
1.0
1.2
1.4
1.6
A
1.8
V
GS
, Gate-to-Source Voltage (V)
V
SD
, Source-to-Drain Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
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3
IRF7501PbF
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
I
D
= 1.7A
0.8
1.5
0.6
1.0
0.4
V
0.2
GS
= 2.5V
0.5
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
A
0.0
0
V
GS
= 5.0V
2
4
6
A
T
J
, Junction Temperature (°C)
I
D
, Drain Current (A)
Fig 5.
Normalized On-Resistance
Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain
Current
R
DS(on)
, Drain-to-Source On Resistance
( Ω )
(Ω
0.13
0.11
0.09
I
D
= 2.4A
0.07
0.05
2
3
4
5
6
7
8
A
V
GS
, Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Voltage
4
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IRF7501PbF
500
-V
GS
, Gate-to-Source Voltage (V)
400
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= 1.7A
V
DS
= 16V
8
C, Capacitance (pF)
C
iss
300
C
oss
6
200
4
C
rss
100
2
0
1
10
100
A
0
0
2
4
FOR TEST CIRCUIT
SEE FIGURE 9
6
8
10
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 8.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
stm32/stm8
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