74V1G125
SINGLE BUS BUFFER (3-STATE)
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 3.8ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA (MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74V1G125STR
74V1G125CTR
DESCRIPTION
The 74V1G125 is an advanced high-speed CMOS
SINGLE BUS BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
3-STATE control input G has to be set HIGH to
place the output into the high impedance state.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2004
1/10
74V1G125
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1
2
4
3
5
SYMBOL
1G
1A
1Y
GND
V
CC
NAME AND FUNCTION
Output Enable Input
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
X
L
H
X : Don’t Care
Z : High Impedance
G
H
L
L
Y
Z
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
±
25
±
50
-65 to +150
260
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time (note 1) (V
CC
= 3.3
±
0.3V)
(V
CC
= 5.0
±
0.5V)
Parameter
Value
2 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 100
0 to 20
Unit
V
V
V
°C
ns/V
ns/V
1) V
IN
from 30% to 70% of V
CC
2/10
74V1G125
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
2.0
3.0 to
5.5
2.0
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
V
OL
Low Level Output
Voltage
2.0
3.0
4.5
3.0
4.5
I
OZ
High Impedance
Output Leakage
Current
Input Leakage
Current
Quiescent Supply
Current
5.5
0 to
5.5
5.5
I
O
=-50
µA
I
O
=-50
µA
I
O
=-50
µA
I
O
=-4 mA
I
O
=-8 mA
I
O
=50
µA
I
O
=50
µA
I
O
=50
µA
I
O
=4 mA
I
O
=8 mA
V
I
= V
IH
or V
IL
V
O
= V
CC
or GND
V
I
= 5.5V or GND
V
I
= V
CC
or GND
T
A
= 25°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±0.25
±
0.1
1
2.0
3.0
4.5
1.9
2.9
4.4
2.48
3.8
0.1
0.1
0.1
0.44
0.44
±
2.5
±
1
10
Typ.
Max.
Value
-40 to 85°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
1.9
2.9
4.4
2.4
3.7
0.1
0.1
0.1
0.55
0.55
±
5
±
1
20
µA
µA
µA
V
V
Max.
-55 to 125°C
Min.
1.5
0.7V
CC
0.5
0.3V
CC
V
V
Max.
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
V
IL
V
OH
I
I
I
CC
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
V
CC
(V)
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
t
PLZ
t
PHZ
Output Disable
Time
3.3
(*)
3.3
(*)
5.0
(**)
5.0
(**)
3.3
(*)
t
PZL
t
PZH
Output Enable
Time
3.3
(*)
5.0
(**)
5.0
(**)
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5.0V
±
0.5V
Value
T
A
= 25°C
Min.
Typ.
5.1
5.6
3.8
4.3
5.4
7.9
3.6
5.1
5.4
5.9
3.7
4.1
Max.
7.5
8.0
5.5
6.5
8.0
11.5
5.0
7.0
7.6
8.5
5.9
6.5
-40 to 85°C
Min.
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max.
8.5
9.5
6.5
7.5
9.0
12.5
6.0
8.0
9.5
10.0
7.0
7.5
-55 to 125°C
Min.
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max.
9.5
10.5
7.5
8.5
10.0
13.5
7.0
9.0
10.5
11.0
8.0
8.5
ns
ns
ns
Unit
C
L
(pF)
15
50
15
50
15
50
15
50
15
50
15
50
t
PLH
t
PHL
Propagation Delay
Time
3/10
74V1G125
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
T
A
= 25°C
Min.
C
IN
C
OUT
C
PD
Input Capacitance
Output
Capacitance
Power Dissipation
Capacitance
(note 1)
Typ.
4
4
10
Max.
10
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
pF
Unit
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
TEST CIRCUIT
TEST
t
PLH
, t
PHL
t
PZL
, t
PLZ
t
PZH
, t
PHZ
C
L
=15/50pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
SWITCH
Open
V
CC
GND
4/10
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