74VHC20
Dual 4-input NAND gate
Features
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High speed: t
PD
= 3.3 ns (typ.) at V
CC
= 5 V
Low power dissipation:
I
CC
= 2
μA
(max.) at T
A
= 25°C
High noise immunity:
V
NIH
= V
NIL
= 28% V
CC
(min.)
Power-down protection on inputs
Symmetrical output impedance:
|i
OH
| = I
OL
= 8 mA (min)
Balanced propagation delays: t
PLH
≅
t
PHL
Operating voltage range:
V
CC
(OPR) = 2 V to 5.5 V
Pin and function compatible with 74 series 20
Improved latch-up immunity
SO-14
Description
The 74VHC20 is an advanced high-speed CMOS
dual 4-input NAND gate, manufactured with sub-
micron silicon gate and double-layer metal wiring
C
2
MOS technology.
The internal circuit is composed of three stages
including a buffer output, which provides high
noise immunity and stable output.
bs
O
Power-down protection is provided on all inputs
and 0 to 7 V can be accepted on the inputs with
no regard to the supply voltage. This device can
be used to interface 5 V to 3 V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2 kV ESD immunity and transient excess
voltage.
et
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January 2012
Doc ID 6285 Rev 5
1/15
www.st.com
15
Absolute maximum ratings and operating conditions
74VHC20
2
Note:
Absolute maximum ratings and operating conditions
Absolute maximum ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
Table 3.
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
or I
GND
T
stg
T
L
Supply voltage
DC input voltage
DC output voltage
DC input diode current
DC output diode current
DC output current
DC V
CC
or ground current
Storage temperature
Lead temperature (10 sec)
Absolute maximum ratings (AMR)
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 20
±
20
Unit
V
V
Table 4.
Symbol
V
CC
V
I
V
O
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Output voltage
bs
O
et
l
o
1. V
IN
from 30% to 70% of V
CC
.
r
P
e
dt/dv
T
op
od
Operating temperature
Input rise and fall time
(1)
V
CC
= 3.3
±
0.3 V
V
CC
= 5.0
±
0.5V
uc
s)
t(
O
-
so
b
te
le
r
P
d
o
±
25
±
50
300
Value
uc
s)
t(
V
mA
mA
mA
mA
°C
°C
-65 to +150
Unit
V
V
V
°C
ns/V
2 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 100
0 to 20
4/15
Doc ID 6285 Rev 5
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