19-2930; Rev 0; 8/03
500MHz to 1100MHz Adjustable
RF Predistorter
General Description
The MAX2010 adjustable RF predistorter is designed to
improve power amplifier (PA) adjacent-channel power
rejection (ACPR) by introducing gain and phase expan-
sion in a PA chain to compensate for the PA’s gain and
phase compression. With its +23dBm maximum input
power level and wide adjustable range, the MAX2010
can provide up to 12dB of ACPR improvement for
power amplifiers operating in the 500MHz to 1100MHz
frequency band. Higher frequencies of operation can
be achieved with this IC’s counterpart, the MAX2009.
The MAX2010 is unique in that it provides up to 6dB of
gain expansion and 21° of phase expansion as the input
power is increased. The amount of expansion is config-
urable through two independent sets of control: one set
adjusts the gain expansion breakpoint and slope, while
the second set controls the same parameters for phase.
With these settings in place, the linearization circuit can
be run in either a static set-and-forget mode, or a more
sophisticated closed-loop implementation can be
employed with real-time software-controlled distortion
correction. Hybrid correction modes are also possible
using simple lookup tables to compensate for factors
such as PA temperature drift or PA loading.
The MAX2010 comes in a 28-pin thin QFN exposed
pad (EP) package (5mm x 5mm) and is specified for
the extended (-40°C to +85°C) temperature range.
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Features
Up to 12dB ACPR Improvement*
Independent Gain and Phase Expansion Controls
Gain Expansion Up to 6dB
Phase Expansion Up to 21°
500MHz to 1100MHz Frequency Range
Exceptional Gain and Phase Flatness
Group Delay <2.4ns (Gain and Phase Sections
Combined)
±0.03ns
Group Delay Ripple Over a 100MHz Band
Capable of Handling Input Drives Up to +23dBm
On-Chip Temperature Variation Compensation
Single +5V Supply
Low Power Consumption: 75mW (typ)
Fully Integrated into Small 28-Pin Thin QFN
Package
MAX2010
*Performance
dependent on amplifier, bias, and modulation.
Ordering Information
PART
MAX2010ETI-T
TEMP RANGE
-40°C to +85°C
PIN-PACKAGE
28 Thin QFN-EP*
*EP
= Exposed paddle.
Applications
cdma2000™, GSM/EDGE, and iDEN Base Stations
OUTG
GND*
Functional Diagram/
Pin Configuration
GND*
GND*
22
21 V
CCG
GAIN
CONTROL
20 GND*
19 PBRAW
18 PBEXP
17 PBIN
PHASE
CONTROL
16 GND*
15 V
CCP
8
GND*
9
INP
10
GND*
11
PFS1
12
PFS2
13
PDCS1
14
PDCS2
GCS
GBP
23
GFS
24
Feed-Forward PA Architectures
Digital Baseband Predistortion Architectures
Military Applications
GND*
GND*
ING
GND*
GND*
OUTP
GND*
1
2
3
4
5
6
7
28
27
26
25
MAX2010
cdma2000 is a trademark of Telecommunications Industry
Assoc.
*INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
500MHz to 1100MHz Adjustable
RF Predistorter
MAX2010
ABSOLUTE MAXIMUM RATINGS
V
CCG
, V
CCP
to GND ..............................................-0.3V to +5.5V
ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (V
CCG
+ 0.3V)
INP, OUTP, PFS_, PDCS_, PBRAW,
PBEXP, PBIN to GND ............................-0.3V to (V
CCP
+ 0.3V)
Input (ING, INP, OUTP, OUTG) Level ............................+23dBm
PBEXP Output Current ........................................................±1mA
Continuous Power Dissipation (T
A
= +70°C)
28-Pin Thin QFN-EP
(derate 21mW/°C above +70°C) ...............................1667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit; V
CCG
= V
CCP
= +4.75V to +5.25V; no RF signal applied; INP, ING, OUTP, OUTG are AC-coupled and terminated to
50Ω. V
PF_S1
= open; PBEXP shorted to PBRAW; V
PDCS1
= V
PDCS2
= 0.8V; V
PBIN
= V
GBP
= V
GCS
= GND; V
GFS
= V
CCG
; T
A
= -40°C to
+85°C. Typical values are at V
CCG
= V
CCP
= +5.0V, T
A
= +25°C, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
Analog Input Voltage Range
V
CCG
, V
CCP
V
CCP
V
CCG
PBIN, PBRAW
GBP, GFS, GCS
V
GFS
= V
GCS
= V
PBRAW
= 0V
Analog Input Current
Logic-Input High Voltage
Logic-Input Low Voltage
Logic Input Current
V
GBP
= 0 to +5V
V
PBIN
= 0 to +5V
PDCS1, PDCS2 (Note 1)
PDCS1, PDCS2 (Note 1)
-2
0
0
-2
-100
-100
2.0
0.8
+2
CONDITIONS
MIN
4.75
5.8
10
TYP
MAX
5.25
7
12.1
V
CCP
V
CCG
+2
+170
+220
V
V
µA
µA
UNITS
V
mA
V
2
_______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit, V
CCG
= V
CCP
= +4.75V to +5.25V, 50Ω environment, P
IN
= -20dBm, f
IN
= 500MHz to 1100MHz, V
GCS
= +1.0V,
V
GFS
= +5.0V, V
GBP
= +1.2V, V
PBIN
= V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= +5V, V
PBRAW
= V
PBEXP
, T
A
= -40°C to +85°C. Typical val-
ues are at f
IN
= 880MHz, V
CCG
= V
CCP
= +5V, T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Operating Frequency Range
VSWR
PHASE CONTROL SECTION
Nominal Gain
Gain Variation Over Temperature
Gain Flatness
Phase-Expansion Breakpoint
Maximum
Phase-Expansion Breakpoint
Minimum
Phase-Expansion Breakpoint
Variation Over Temperature
T
A
= -40°C to +85°C
Over a 100MHz band
V
PBIN
= +5V
V
PBIN
= 0V
T
A
= -40°C to +85°C
V
PF_S1
= +5V,
V
PDCS1
= V
PDCS2
= 0V,
P
IN
= -20 dBm to +23 dBm
V
PDCS1
= 5V,
V
PDCS2
= 0V,
V
PF_S1
= +1.5V
Phase Expansion
V
PDCS1
= 0V,
V
PDCS2
= 5V,
V
PF_S1
= +1.5V
V
PF_S1
= 0V,
V
PDCS1
= V
PDCS2
= +5V,
P
IN
= -20dBm to +23dBm
Phase-Expansion Slope
Maximum
Phase-Expansion Slope Minimum
Phase-Slope Variation Over
Temperature
Phase Ripple
Noise Figure
Absolute Group Delay
Group Delay Ripple
Parasitic Gain Expansion
Interconnects de-embedded
Over a 100MHz band
P
IN
= -20dBm to +23dBm
P
IN
= +9dBm
V
PF_S1
= 0V,
V
PDCS1
= V
PDCS2
= +5V,
P
IN
= +9dBm
P
IN
= +9dBm, T
A
= -40°C to +85°C
Over a 100MHz band, deviation from linear phase
14
-5.5
-1.7
±0.1
23
0.7
±1.5
dB
dB
dB
dBm
dBm
dB
ING, INP, OUTG, OUTP
CONDITIONS
MIN
500
1.3:1
TYP
MAX
1100
UNITS
MHz
MAX2010
21
16
Degrees
6
Degrees
/dB
Degrees
/dB
Degrees
/dB
Degrees
dB
ns
ns
dB
1.4
0.6
0.05
±0.02
5.5
1.3
±0.01
+0.4
_______________________________________________________________________________________
3
500MHz to 1100MHz Adjustable
RF Predistorter
MAX2010
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2010 EV kit, V
CCG
= V
CCP
= +4.75V to +5.25V, 50Ω environment, P
IN
= -20dBm, f
IN
= 500MHz to 1100MHz, V
GCS
= +1.0V,
V
GFS
= +5.0V, V
GBP
= +1.2V, V
PBIN
= V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= +5V, V
PBRAW
= V
PBEXP
, T
A
= -40°C to +85°C. Typical val-
ues are at f
IN
= 880MHz, V
CCG
= V
CCP
= +5V, T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
GAIN CONTROL SECTION
-14.9
Nominal Gain
Gain Variation Over Temperature
Gain Flatness
Gain-Expansion Breakpoint
Maximum
Gain-Expansion Breakpoint
Minimum
Gain-Expansion Breakpoint
Variation Over Temperature
Gain-Expansion
Gain-Expansion Slope
Gain-Slope Variation Over
Temperature
Noise Figure
Absolute Group Delay
Group Delay Ripple
Phase Ripple
Parasitic Phase Expansion
Interconnects de-embedded
Over a 100MHz band
Over a 100MHz band, deviation from linear phase
P
IN
= -20dBm to +23dBm
V
GCS
= 0V, V
GFS
= +5V
V
GCS
= +5V, V
GFS
= 0V
T
A
= -40°C to +85°C
Over a 100MHz band
V
GBP
= +5V
V
GBP
= +0.5V
T
A
= -40°C to +85°C
V
GFS
= +5V, P
IN
= -20dBm to +23dBm
V
GFS
= 0V, P
IN
= -20dBm to +23dBm
V
GFS
= +5V, P
IN
= +15dBm
V
GFS
= +0V, P
IN
= +15dBm
P
IN
= +15dBm, T
A
= -40°C to +85°C
-24.3
-7.6
-1.4
±0.2
23
-2.5
-0.5
5.3
3.1
0.43
0.23
-0.01
14.9
1.12
±0.02
±0.09
+3
dB
dB
dBm
dBm
dB
dB
dB/dB
dB/dB
dB
ns
ns
Degrees
Degrees
dB
CONDITIONS
MIN
TYP
MAX
UNITS
Note 1:
Guaranteed by design and characterization.
Note 2:
All limits reflect losses and characteristics of external components shown in the
Typical Application Circuit,
unless otherwise
noted.
4
_______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics
Phase Control Section
(MAX2010 EV kit, V
CCP
= +5.0V, P
IN
= -20dBm, V
PBIN
= 0V, V
PF_S1
= +5.0V, V
PDCS1
= V
PDCS2
= 0V, f
IN
= 880MHz, T
A
= +25°C
unless otherwise noted.)
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX2010 toc01
MAX2010
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc02
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc03
6.6
6.5
6.4
SUPPLY CURRENT (mA)
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
4.75
4.85
4.95
5.05
5.15
T
A
= -40°C
T
A
= +85°C
T
A
= +25°C
0
0
OUTPUT RETURN LOSS (dB)
10
INPUT RETURN LOSS (dB)
10
B
20
C
20
30
D
40
B
50
A
30
A
D
C
40
50
0.5
0.9
1.0
0.8
FREQUENCY (GHz)
A = V
PDCS1
= V
PDCS2
= V
PF_S1
= 0V
B = V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= 5V
C = V
PDCS1
= V
PDCS2
= 5V, V
PF_S1
= 0V
D = V
PDCS1
= V
PDCS2
= V
PF_S1
= 5V
0.6
0.7
1.1
0.5
0.9
1.0
0.8
FREQUENCY (GHz)
A = V
PDCS1
= V
PDCS2
= V
PF_S1
= 0V
B = V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= 5V
C = V
PDCS1
= V
PDCS2
= 5V, V
PF_S1
= 0V
D = V
PDCS1
= V
PDCS2
= V
PF_S1
= 5V
0.6
0.7
1.1
5.25
SUPPLY VOLTAGE (V)
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc04
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc05
SMALL-SIGNAL GAIN
vs. FREQUENCY
MAX2010 toc06
0
0
-4.0
-4.5
-5.0
GAIN (dB)
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
OUTPUT RETURN LOSS (dB)
10
INPUT RETURN LOSS (dB)
B
A
20
10
B
A
20
C
-5.5
-6.0
30
D
40
C
50
0.5
0.6
0.7
0.9
0.8
FREQUENCY (GHz)
1.0
1.1
30
D
40
-6.5
-7.0
0.5
0.6
0.7
0.9
0.8
FREQUENCY (GHz)
1.0
1.1
0.5
0.6
0.7
0.8
0.9
FREQUENCY (GHz)
1.0
1.1
50
P
IN
= +15dBm
A = V
PDCS1
= V
PDCS2
= V
PF_S1
= 0V
B = V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= 5V
C = V
PDCS1
= V
PDCS2
= 5V, V
PF_S1
= 0V
D = V
PDCS1
= V
PDCS2
= V
PF_S1
= 5V
P
IN
= +15dBm
A = V
PDCS1
= V
PDCS2
= V
PF_S1
= 0V
B = V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= 5V
C = V
PDCS1
= V
PDCS2
= 5V, V
PF_S1
= 0V
D = V
PDCS1
= V
PDCS2
= V
PF_S1
= 5V
_______________________________________________________________________________________
5
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