Si4565ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
D
1
D
2
D
2
G
1
D
1
S
2
G
2
S
1
N-Channel
MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
I
AS
E
AS
P
D
T
J
, T
stg
N-Channel
40
± 16
6.6
5.3
5.3
b, c
4.2
b, c
30
2.5
1.7
b, c
30
13
8.5
3.1
2
2
b, c
1.28
b, c
- 55 to 150
- 5.6
- 4.5
- 4.5
b, c
- 3.6
b, c
- 30
- 2.5
- 1.7
b, c
- 30
16
13
3.1
2
2
b, c
1.28
b, c
P-Channel
- 40
Unit
V
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
A
mJ
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
b, d
t
≤
10 s
Steady-State
Symbol
R
thJA
R
thJF
N-Channel
Typ.
Max.
52
62.5
32
40
P-Channel
Typ.
Max.
50
62.5
30
38
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 73880
S09-0393-Rev. B, 09-Mar-09
www.vishay.com
1
Si4565ADY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
DS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
DS
=
- 5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 4.5 A
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= - 4.5 V, I
D
= - 3.9 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 5 A
Total Gate Charge
Q
g
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 5 A
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 5 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
625
805
88
120
50
85
14.4
18.5
6.6
9
1.6
2
2.3
3.6
2.3
11.5
3.5
18
Ω
22
28
10
14
nC
pF
g
fs
V
DS
= 15 V, I
D
= 5 A
V
DS
= - 15 V, I
D
= - 4.5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
0.032
0.045
0.041
0.059
15
13
0.039
0.054
0.050
0.072
S
Ω
0.8
- 0.8
40
- 40
37
- 38
-5
4.0
2.2
- 2.2
100
- 100
1
-1
10
- 10
A
µA
nA
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
www.vishay.com
2
Document Number: 73880
S09-0393-Rev. B, 09-Mar-09
Si4565ADY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 4
Ω
I
D
≅
- 5 A, V
GEN
= - 10 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 4
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 4
Ω
I
D
≅
- 5 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
S
= 1.7 A
I
S
= - 1.7 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
I
F
= 1.7 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 1.7 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.79
- 0.79
30
27
30
17
17
13
13
14
ns
9
7
51
42
21
33
6
56
13
21
85
90
17
44
7
56
15
14
77
65
32
50
10
85
20
32
128
135
26
66
11
85
2.5
- 2.5
30
- 30
1.2
- 1.2
45
45
45
26
V
ns
nC
A
ns
ns
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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