IRFH5304PbF
HEXFET
®
Power MOSFET
R
DS(on) max
(@V
GS
= 10V)
V
DS
30
4.5
16
79
V
mΩ
nC
A
PQFN 5X6 mm
Q
g (typical)
I
D
(@T
c(Bottom)
= 25°C)
Applications
•
Control MOSFET for buck converters
Features and Benefits
Features
Benefits
Low charge (typical 16nC)
Low Thermal Resistance to PCB (<2.7°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5304TRPBF
IRFH5304TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Note
EOL notice # 259
Absolute Maximum Ratings
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@ T
C(Bottom)
= 25°C
T
J
T
STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Max.
30
± 20
22
17
79
50
320
3.6
46
0.029
-55 to + 150
A
Units
V
g
Power Dissipation
g
c
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
Notes
through
are on page 8
1
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©
2015 International Rectifier
Submit Datasheet Feedback
March 19, 2015
IRFH5304PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
88
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
3.8
5.8
1.8
-6.6
–––
–––
–––
–––
–––
41
16
3.6
2.7
5.8
3.9
8.5
9.8
1.2
13
25
12
6.6
2360
510
220
Conditions
Max. Units
–––
V V
GS
= 0V, I
D
= 250μA
––– V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 47A
4.5
mΩ
V
GS
= 4.5V, I
D
= 47A
6.8
2.35
V
V
DS
= V
GS
, I
D
= 50μA
––– mV/°C
V
DS
= 24V, V
GS
= 0V
5.0
μA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
150
V
GS
= 20V
100
nA
-100
V
GS
= -20V
–––
S V
DS
= 15V, I
D
= 47A
–––
nC V
GS
= 10V, V
DS
= 15V, I
D
= 49A
24
–––
V
DS
= 15V
–––
V
GS
= 4.5V
nC
–––
I
D
= 47A
–––
See Fig.17 & 18
–––
–––
nC V
DS
= 16V, V
GS
= 0V
e
e
–––
–––
–––
–––
–––
–––
–––
–––
Ω
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 47A
R
G
=1.8Ω
See Fig.15
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Min.
–––
–––
Typ.
–––
–––
Typ.
–––
–––
Max.
46
47
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
79
A
320
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
––– 0.71 –––
V
–––
–––
1.0
V
–––
19
29
ns
–––
44
66
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 5A, V
GS
= 0V
T
J
= 25°C, I
S
= 47A, V
GS
= 0V
T
J
= 25°C, I
F
= 47A, V
DD
= 15V
di/dt = 300A/μs
e
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
2
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Submit Datasheet Feedback
Max.
2.7
15
35
22
Units
°C/W
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©
2014 International Rectifier
March 19, 2015
IRFH5304PbF
1000
TOP
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
1000
TOP
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.8V
2.8V
1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
10
100
≤
60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
ID = 47A
V GS = 10V
1.5
100
TJ = 150°C
10
TJ = 25°C
1
1.0
V DS = 15V
≤
60μs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = Cds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14
V GS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 47A
V DS= 24V
V DS= 15V
V DS= 6.0V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
50
60
V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
3
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2014 International Rectifier
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
Submit Datasheet Feedback
March 19, 2015
IRFH5304PbF
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100.0
TJ = 150°C
10.0
100
100μsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
TJ = 25°C
1.0
V GS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10msec
10
100
0.1
V DS, Drain-to-Source Voltage (V)
V SD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
80
3.0
Fig 8.
Maximum Safe Operating Area
V GS(th) Gate threshold Voltage (V)
2.5
ID , Drain Current (A)
60
2.0
40
1.5
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 50μA
20
1.0
0
25
50
75
100
125
150
0.5
-75
-50
-25
0
25
50
75
100
125
150
TC , CaseTemperature (°C)
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
10
Fig 10.
Threshold Voltage Vs. Temperature
Thermal Response ( ZthJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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2014 International Rectifier
Submit Datasheet Feedback
March 19, 2015
t1 , Rectangular Pulse Duration (sec)
IRFH5304PbF
RDS(on), Drain-to -Source On Resistance ( m
Ω
)
16
200
ID = 47A
12
EAS, Single Pulse Avalanche Energy (mJ)
ID
160
6.5A
14A
BOTTOM
47A
TOP
120
8
TJ = 125°C
4
80
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
40
0
25
50
75
100
125
150
V GS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
5
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©
2014 International Rectifier
Submit Datasheet Feedback
March 19, 2015
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