SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 4 - NOVEMBER 1996
PARTMARKING DETAILS -
7
FMMT5400 - 1LZ
FMMT5401 - Z2L
FMMT5400 FMMT5550
FMMT5401 FMMT5551
FMMT5400
FMMT5401
C
B
E
COMPLEMENTARY TYPES -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
FMMT5400 FMMT5401
-130
-120
-5
-600
330
-160
-150
-5
-600
330
UNIT
V
V
V
mA
mW
°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
FMMT5400
-130
-120
-5
-100
-100
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
MAX. MIN.
-160
-150
-5
FMMT5401
MAX.
UNIT CONDITIONS.
V
V
V
nA
µ
A
nA
µ
A
I
C
=-100
µ
A
I
C
=-1mA
I
E
=-10
µ
A
V
CB
=-100V
V
CB
=-100V, T
A
=100°C
V
CB
=-120V
V
CB
=-120V, T
A
=100°C
I
C
=-1mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-5V
V
V
V
V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
-50
-50
50
60
50
240
-0.2
-0.5
-1.0
-1.0
100
300
6.0
40
260
8
Static Forward
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
Small Signal
Noise Figure
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
obo
h
fe
NF
30
40
40
-180
-0.2
-0.5
-1.0
-1.0
100
400
6.0
MHz I
C
=-10mA, V
CE
=-10V
f=100MHz
pF
V
CB
=-10V, f=1MHz
I
C
=-1mA, V
CE
=-10V
f=1KHz
dB
I
C
=-250
µ
A, V
CE
=-5V,
R
S
=1K
Ω
f=10Hz to 15.7KHz
30
200
8
Periodic Sample Test Only
PAGE NUMBER
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