PD - 95554A
SMPS MOSFET
IRLR3714PbF
IRLU3714PbF
HEXFET
®
Power MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
20V
R
DS(on)
max
20mΩ
I
D
36A
D-Pak
IRLR3714
I-Pak
IRLU3714
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
I
D
@ T
C
I
DM
P
D
@T
C
P
D
@T
C
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
36
31
140
47
33
0.31
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
= 25°C
= 70°C
= 25°C
= 70°C
T
J
, T
STG
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Typ.
–––
–––
–––
Max.
3.2
50
110
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
1/11/05
IRLR/U3714PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
–––
––– V
0.022 ––– V/°C
15
20
mΩ
21
28
–––
3.0
V
–––
20
µA
–––
100
–––
200
nA
––– -200
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 18A
V
GS
= 4.5V, I
D
= 14A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
6.5
1.8
2.9
7.1
8.7
78
10
4.5
670
470
68
Max. Units
Conditions
–––
S
V
DS
= 10V, I
D
= 14A
9.7
I
D
= 14A
–––
nC V
DS
= 10V
–––
V
GS
= 4.5V
–––
V
GS
= 0V, V
DS
= 10V
–––
V
DD
= 10V
–––
I
D
= 14A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
72
14
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
––– 36
––– 140
–––
–––
–––
–––
–––
–––
––– 1.3
0.88 –––
35
53
34
51
35
53
35
53
V
ns
nC
ns
nC
A
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
T
J
= 125°C, I
S
= 18A, V
GS
= 0V
T
J
= 25°C, I
F
= 18A, V
R
=10V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 18A, V
R
=10V
di/dt = 100A/µs
2
www.irf.com
IRLR/U3714PbF
10000
VGS
TOP
15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
1000
100
100
VGS
15V
10V
4.5V
3.0V
2.7V
2.5V
2.2V
BOTTOM 2.0V
TOP
10
10
1
2.0V
1
0.1
2.0V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
100
0.01
0.1
1
10
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.5
I
D
= 36A
ID, Drain-to-Source Current
(Α
)
2.0
100.00
R
DS(on)
, Drain-to-Source On Resistance
T J = 25°C
T J = 175°C
(Normalized)
1.5
1.0
10.00
0.5
VDS = 15V
1.00
2.0
4.0
20µs PULSE WIDTH
6.0
8.0
10.0
V
GS
= 10V
0.0
-60
-40
-20
0
20
40
60
80
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLR/U3714PbF
10000
15
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
V
GS
, Gate-to-Source Voltage (V)
I
D
=
14A
V
DS
= 16V
V
DS
= 10V
12
C, Capacitance(pF)
1000
Ciss
Coss
9
6
100
Crss
3
10
1
10
100
0
0
4
8
12
16
20
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
10.00
1.00
T J = 25°C
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
VGS = 0V
0.10
0.0
1.0
2.0
3.0
VSD, Source-toDrain Voltage (V)
100
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLR/U3714PbF
40
LIMITED BY PACKAGE
V
DS
V
GS
R
D
30
R
G
4.5V
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
20
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
t
1
/ t
2
+T
C
1
Thermal Response
J
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
