19-0383; Rev 0; 7/05
Quad, Low-Power, 1200Mbps
ATE Driver
General Description
The MAX9977 quad, low-power, high-speed, pin-elec-
tronics driver includes, for each channel, a three-level
pin driver. The driver features a wide voltage range and
high-speed operation, includes high-impedance and
active-termination (3rd-level drive) modes, and is highly
linear even at low voltage swings.
The MAX9977 provides high-speed, differential control
inputs with internal 50Ω (100Ω LVDS) termination resistors
that allow compatibility with 1.8V and 3.5V terminated
0.4V
P-P
CML, reducing the discrete component count
required on the circuit board. The MAX9977AD has no
internal termination.
A 3-wire, low-voltage, CMOS-compatible serial interface
programs the low-leakage and tri-state/terminate opera-
tional configurations of the MAX9977.
The MAX9977’s operating range is -1.5V to +6.5V (con-
sult factory for other operating ranges), and features a
maximum power dissipation of only 0.8W per channel.
The device is available in a 100-pin, 14mm x 14mm
x 0.1mm body, and 0.5mm pitch TQFP. An exposed
8mm x 8mm die pad on the top of the package facili-
tates efficient heat removal. The device is specified to
operate with an internal die temperature of +60°C to
+100°C, and features a die temperature monitor output.
Features
o
Low Power Dissipation: 0.8W/Channel
o
High Speed: 1200Mbps at 3V
P-P
and 1800Mbps
at 1V
P-P
o
Low Timing Dispersion
o
Wide -1.5V to +6.5V Operating Range
o
Interfaces Easily with Most Logic Families
o
Active Termination (3rd-Level Drive)
o
Internal 50Ω Termination Resistors on Control
Inputs
o
Low Gain and Offset Errors
o
Pin Compatible with the MAX9963 and MAX9965
Quad Drivers
MAX9977
Ordering Information
PART
TEMP
RANGE
PIN-
PACKAGE
EXPOSED
PAD
VARIATION
CODE
C100E-8R
C100E-8R
C100E-8R
C100E-8R
MAX9977AKCCQ
MAX9977AKCCQ+
MAX9977ADCCQ*
0°C to +70°C 100 TQFP-IDP**
0°C to +70°C 100 TQFP-IDP**
0°C to +70°C 100 TQFP-IDP**
MAX9977ADCCQ+* 0°C to +70°C 100 TQFP-IDP**
Applications
Medium-Performance System-on-Chip ATE and
Memory Applications
*Future
product—contact factory for availability.
**IDP
= Inverted die pad.
+Denotes
lead-free package.
Pin Configuration and Selector Guide appear at end of
data sheet.
Functional Diagram
CH_ MODE BITS
CS
SCLK
DIN
RST
THR
DLV_
47Ω
DHV_
DTV_
LLEAK
GS
V
T
_ _
OPTIONAL R
DATA
2 x 50Ω
OPTIONAL R
RCV
2 x 50Ω
MULTIPLEXER
BUFFER
0
DUT_
SERIAL INTERFACE
LLEAK
TMSEL
SERIAL INTERFACE IS COMMON
TO ALL FOUR CHANNELS.
MODE BITS INDEPENDENTLY
LATCHED FOR EACH CHANNEL.
V
CC
V
EE
TEMP
GND
MAX9977
DATA_
NDATA_
RCV_
NRCV_
ONE OF FOUR IDENTICAL CHANNELS SHOWN.
TMSEL
HIGH IMPEDANCE
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Quad, Low-Power, 1200Mbps
ATE Driver
MAX9977
ABSOLUTE MAXIMUM RATINGS
V
CC
to GND ............................................................-0.3V to +11V
V
EE
to GND..........................................................-5.75V to +0.3V
V
CC
- V
EE
...........................................................-0.3V to +16.75V
DUT_ to GND.......................................................-2.75V to +7.5V
DATA_, NDATA_, RCV_, NRCV_ to GND .................-2.5V to +5V
DATA_ to NDATA_, RCV_ to NRCV_ ..................................±1.5V
V
T
12, V
T
34 to GND...................................................-2.5V to +5V
DATA_, NDATA_, RCV_, NRCV_ to V
T
12 or V
T
34 .................±2V
SCLK, DIN,
CS, RST
to GND ......................................-1V to +5V
DHV_, DLV_, DTV_ to GND ...................................-2.5V to +7.5V
DHV_ to DLV_ ......................................................................±10V
DHV_ to DTV_ ......................................................................±10V
DLV_ to DTV_.......................................................................±10V
GS to GND .............................................................................±1V
All Other Pins to GND ......................(V
EE
- 0.3V) to (V
CC
+ 0.3V)
TEMP Current...................................................-0.5mA to +20mA
DUT_ Short Circuit to -1.5V to +6.5V..........................Continuous
Continuous Power Dissipation (T
A
= +70°C)
100-Pin TQFP (derate 167mW/°C above +70°C) .........13.3W*
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature .....................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
*Dissipation
wattage values are based on still air with no heat sink. Actual maximum power dissipation is a function of heat extraction
technique and may be substantially higher.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
CC
= +9.75V, V
EE
= -4.75V, V
GS
= 0, V
T
12 = V
T
34 = 1.8V, T
J
= +85°C, unless otherwise noted. All temperature coefficients are measured
at T
J
= +60°C to +100°C, unless otherwise noted.) (Note 1)
PARAMETER
POWER SUPPLIES
Positive Supply
Negative Supply
Positive Supply Current (Note 2)
Negative Supply Current (Note 2)
Power Dissipation (Note 2)
DUT_ CHARACTERISTICS
Operating Voltage Range
Leakage Current in
High-Impedance Mode
Leakage Current in
Low-Leakage Mode
Combined Capacitance
Low-Leakage Enable Time
Low-Leakage Disable Time
Low-Leakage Recovery
C
DUT
V
DUT
I
DUT
(Note 3)
LLEAK = 0; V
DUT
_ = -1.5V, 0, +3V, +6.5V
LLEAK = 1; V
DUT
_ = -1.5V, 0, +3V, +6.5V
Driver in term mode (DUT_ = DTV_)
Driver in high-impedance mode
(Notes 4, 5)
(Notes 5, 6)
Time to return to the specified maximum
leakage after a 3V, 4V/ns step at DUT_
(Notes 5, 6)
±5
2
4
20
0.1
5
-1.5
+6.5
±3
±50
5
6
V
µA
nA
pF
µs
µs
µs
V
CC
V
EE
I
CC
I
EE
P
D
Drivers active
Drivers in high impedance
Drivers active
Drivers in high impedance
Drivers active
Drivers in high impedance
9.5
-5.25
9.75
-4.75
192
175
-224
-207
3.0
2.7
10.5
-4.50
215
196
-251
-232
3.3
3.1
V
V
mA
mA
W
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
2
_______________________________________________________________________________________
Quad, Low-Power, 1200Mbps
ATE Driver
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +9.75V, V
EE
= -4.75V, V
GS
= 0, V
T
12 = V
T
34 = 1.8V, T
J
= +85°C, unless otherwise noted. All temperature coefficients are measured
at T
J
= +60°C to +100°C, unless otherwise noted.) (Note 1)
PARAMETER
CONTROL AND LEVELS INPUTS
LEVEL PROGRAMMING INPUTS (DHV_, DLV_, DTV_)
Input Bias Current
Settling Time
Input High Voltage
Input Low Voltage
Differential Input Voltage
Input Termination Voltage
Input Termination Resistor
V
IHD
V
ILD
Between differential inputs
V
DIFF
V
T_ _
Between signal and corresponding
termination voltage input
V
THRINT
R
O
V
THR
V
IH
V
IL
I
B
f
SCLK
t
CH
t
CL
t
CSS0
t
CSS1
t
CSH1
t
DS
t
DH
t
CSWH
T
J
= +70°C, R
L
≥
10MΩ
8
8
3.5
3.5
3.5
3.5
3.5
20
3.33
+10
20
0.43
V
THR
+
0.2
-0.1
Between a differential input and its
termination voltage
0
47.5
50
I
BIAS
To 0.1% of full-scale change
0
-0.2
±0.15
1
3.5
+3.2
±1.00
±1.9
+3.5
52.5
V
V
Ω
±25
µA
µs
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MAX9977
DIFFERENTIAL CONTROL INPUTS (DATA_, NDATA_, RCV_, NRCV_)
SINGLE-ENDED CONTROL INPUTS (CS, SCLK, DIN,
RST)
Internal Threshold Reference
Internal Reference Output
Resistance
External Threshold Reference
Input High Voltage
Input Low Voltage
Input Bias Current
SCLK Frequency
SCLK Pulse-Width High
SCLK Pulse-Width Low
CS
Low to SCLK High Setup
CS
High to SCLK High Setup
SCLK High to
CS
High Hold
DIN to SCLK High Setup
DIN to SCLK High Hold
CS
Pulse-Width High
TEMPERATURE MONITOR (TEMP)
Nominal Voltage
Temperature Coefficient
Output Resistance
V
mV/°C
kΩ
1.05
1.25
20
1.73
3.5
V
THR
-
0.2
±25
50
1.45
V
kΩ
V
V
V
µA
MHz
ns
ns
ns
ns
ns
ns
ns
ns
SERIAL INTERFACE TIMING (Figure 4)
_______________________________________________________________________________________
3
Quad, Low-Power, 1200Mbps
ATE Driver
MAX9977
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +9.75V, V
EE
= -4.75V, V
GS
= 0, V
T
12 = V
T
34 = 1.8V, T
J
= +85°C, unless otherwise noted. All temperature coefficients are measured
at T
J
= +60°C to +100°C, unless otherwise noted.) (Note 1)
PARAMETER
DRIVERS (Note 7)
DC OUTPUT CHARACTERISTICS (R
L
≥
10M
Ω)
DHV_, DLV_, DTV_
Output Offset Voltage
Output Offset Voltage Due to
Ground Sense
DHV_, DLV_, DTV_ Output Offset
Temperature Coefficient
DHV_, DLV_, DTV_ Gain
DHV_, DLV_, DTV_ Gain
Temperature Coefficient
Linearity Error
DHV_ to DLV_ Crosstalk
DLV_ to DHV_ Crosstalk
DTV_ to DLV_ and DHV_
Crosstalk
DHV_ to DTV_ Crosstalk
DLV_ to DTV_ Crosstalk
DHV_, DTV_, DLV_ DC
Power-Supply Rejection Ratio
Maximum DC Drive Current
DC Output Resistance
DC Output Resistance Variation
PSRR
I
DUT
_
R
DUT
_
∆R
DUT
_
I
DUT
_ =
±30mA
(Note 11)
I
DUT
_ =
±1mA, ±8mA
I
DUT
_ =
±1mA, ±8mA, ±15mA, ±40mA
±80
V
DLV
_ = 0, V
DHV
_ = 0.1V
Drive-Mode Overshoot
V
DLV
_ = 0, V
DHV
_ = 1V
V
DLV
_ = 0, V
DHV
_ = 3V
V
DLV
_ = 0, V
DHV
_ = 0.1V
Drive-Mode Undershoot
V
DLV
_ = 0, V
DHV
_ = 1V
V
DLV
_ = 0, V
DHV
_ = 3V
Term-Mode Spike
High-Impedance-Mode Spike
V
DHV
_ = V
DTV
_ = 1V, V
DLV
_ = 0
V
DLV
_ = V
DTV
_ = 0, V
DHV
_ = 1V
V
DLV
_ = -1.0V, V
DHV
_ = 0
V
DLV
_ = 0, V
DHV
_ = 1V
15
110
210
4
20
30
180
180
100
100
22
130
370
11
65
185
250
250
mV
mV
mV
mV
V
DUT
_ = 1.5V, 3V (Note 8)
Full range (Notes 8, 9)
V
DLV
_ = 0; V
DHV
_ = 200mV, 6.5V
V
DHV
_ = 5V; V
DLV
_ = -1.5V, +4.8V
V
DHV
_ = 3V; V
DLV
_ = 0;
V
DTV
_ = -1.5V, +6.5V
V
DTV
_ = 1.5V; V
DLV
_ = 0; V
DHV
_ = 1.6V, 3V
V
DTV
_ = 1.5V; V
DHV
_ = 3V; V
DLV
_ = 0, 1.4V
(Note 10)
±40
46
47
0.5
0.75
A
V
Measured with V
DHV
_, V
DLV
_,
and V
DTV
_ at 0 and 4.5V
0.997
V
OS
V
GSOS
At DUT_ with V
DHV
_, V
DTV
_, V
DLV
_
independently tested at +1.5V
V
GS
= +100mV, V
DHV
_ = 6.5V + 100mV
V
GS
= -100mV, V
DLV
_ = -1.5V - 100mV
±2
±2
+200
1.00
-50
±5
±15
±2
±2
±2
±2
±2
±18
±80
48
1
1.5
1.003
±15
mV
mV
µV/°C
V/V
ppm/°C
mV
mV
mV
mV
mV
mV
mV/V
mA
Ω
Ω
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DYNAMIC OUTPUT CHARACTERISTICS (Z
L
= 50Ω)
AC Drive Current
mA
4
_______________________________________________________________________________________
Quad, Low-Power, 1200Mbps
ATE Driver
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= +9.75V, V
EE
= -4.75V, V
GS
= 0, V
T
12 = V
T
34 = 1.8V, T
J
= +85°C, unless otherwise noted. All temperature coefficients are measured
at T
J
= +60°C to +100°C, unless otherwise noted.) (Note 1)
PARAMETER
Settling Time to within 25mV
Settling Time to within 5mV
Prop Delay, Data to Output
Prop Delay Match, t
LH
vs. t
HL
Prop Delay Match, Drivers within
Package
Prop-Delay Temperature
Coefficient
0.2V
P-P
, 40MHz, 0.6ns to 24.4ns pulse
width, relative to 12.5ns pulse width
1V
P-P
, 40MHz, 0.6ns to 24.4ns pulse width,
relative to 12.5ns pulse width
Prop Delay Change vs.
Pulse Width
2V
P-P
, 40MHz, 0.75ns to 24.25ns pulse
width, relative to 12.5ns pulse width
3V
P-P
, 40MHz, 0.9ns to 24.1ns pulse width,
relative to 12.5ns pulse width
5V
P-P
, Z
L
= 500Ω, 40MHz, 1.4ns to 23.6ns
pulse width, relative to 12.5ns pulse width
Prop Delay Change vs.
Common-Mode Voltage
Prop Delay, Drive to
High Impedance
Prop Delay, High
Impedance to Drive
Prop Delay Match,
t
PDDZ
vs. t
PDZD
Prop Delay Match, t
PDDZ
vs. t
LH
Prop Delay, Drive to Term
Prop Delay, Term to Drive
Prop Delay Match, t
PDDT
vs. t
PDTD
Prop Delay Match, t
PDDT
vs. t
LH
DYNAMIC PERFORMANCE (Z
L
= 50Ω)
0.2V
P-P
, 10% to 90%
1V
P-P
, 10% to 90%
Rise and Fall Time
t
R
, t
F
2V
P-P
, 10% to 90%
3V
P-P
, 10% to 90%
5V
P-P
, Z
L
= 500Ω, 10% to 90%
Rise and Fall Time Match
t
R
vs. t
F
3V
P-P
, 10% to 90%
260
330
430
500
800
310
390
500
650
1000
±50
360
450
570
750
1200
ps
ps
t
PDDT
t
PDTD
V
DHV
_ = 3V, V
DLV
_ = 0, V
DTV
_ = 1.5V
V
DHV
_ = 3V, V
DLV
_ = 0, V
DTV
_ = 1.5V
t
PDDZ
t
PDZD
V
DHV
_ - V
DLV
_ = 1V, V
DHV
_ = 0 to 6V
V
DHV
_ = 1.0V, V
DLV
_ = -1.0V, V
DTV
_ = 0
V
DHV
_ = 1.0V, V
DLV
_ = -1.0V, V
DTV
_ = 0
1.6
2.6
-1.5
0.2
1.3
1.6
-0.7
-0.1
t
PDD
3V
P-P
(Note 14)
SYMBOL
CONDITIONS
3V step (Note 12)
3V step (Note 12)
1.2
MIN
TYP
4
40
1.5
±40
40
+1.6
±25
±25
±30
±35
±100
50
2.1
3.2
-1.1
0.6
1.8
2.1
-0.3
+0.3
75
2.6
3.9
-0.7
1.0
2.3
2.7
-0.1
+0.7
ps
ns
ns
ns
ns
ns
ns
ns
ns
±50
±50
±55
±60
ps
1.9
±100
MAX
UNITS
ns
ns
ns
ps
ps
ps/°C
MAX9977
TIMING CHARACTERISTICS (Z
L
= 50Ω) (Note 13)
_______________________________________________________________________________________
5
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