Features
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Dynamic dv/dt Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7304Q
HEXFET
®
Power MOSFET
S1
G1
S2
G2
1
2
8
7
D1
D1
D2
D2
V
DSS
R
DS(on)
max.
I
D
-20V
0.090
-4.3A
3
4
6
5
Top View
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
SO-8
AUIRF7304Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7304Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7304QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
± 12
-5.0
-55 to + 150
Units
A
W
W°/C
V
V/ns
°C
Thermal Resistance
Symbol
R
JA
Junction-to-Ambient
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-11-16
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRF7304Q
Min. Typ. Max. Units
Conditions
-20
––– –––
V V
GS
= 0V, I
D
= -250µA
––– -0.012 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.090
V
GS
= -4.5V, I
D
= -2.2A
––– ––– 0.140
V
GS
= -2.7V, I
D
= -1.8A
-0.70 ––– -1.5
V V
DS
= V
GS
, I
D
= -250µA
4.0
––– –––
S V
DS
= -16V, I
D
= -2.2A
––– ––– -1.0
V
DS
= - 16V, V
GS
= 0V
µA
––– ––– -25
V
DS
= -16V,V
GS
= 0V,T
J
=125°C
––– ––– -100
V
GS
= -12V
nA
––– –––
100
V
GS
= 12V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
8.4
26
51
33
4.0
6.0
610
310
170
22
3.3
9.0
–––
–––
–––
–––
–––
nH
L
S
–––
–––
–––
–––
pF
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
I
D
= -2.2A
V
DS
= -16V
V
GS
= -4.5V, See Fig.6 & 12
V
DD
= -10V
I
D
= -2.2A
R
G
= 6.0
R
D
= 4.5See Fig.10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -15V
ƒ = 1.0MHz, See Fig.5
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
Typ. Max. Units
–––
–––
–––
56
71
-2.5
-17
-1.0
84
110
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= -1.8A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= -2.2A,
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
SD
-2.2A,
di/dt
50A/µs,
V
DD
V
(BR)DSS
, T
J
150°C.
I
Pulse width
300µs;
duty cycle
2%.
When mounted on 1 inch square copper board , t
sec.
2
2015-11-16
AUIRF7304Q
100
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
VGS
TOP
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
10
1
1
-1.5V
-1.5V
20µs PULSE WIDTH
T
J
= 25°C
A
0.1
1
10
100
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
T
J
= 150°C
0.1
1
10
100
A
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -3.6A
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
10
T
J
= 150°C
1.5
1.0
1
0.5
0.1
1.5
2.0
2.5
3.0
V
DS
= -15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -4.5V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance
Vs. Temperature
2015-11-16
3
AUIRF7304Q
1500
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= -2.2A
V
DS
= -16V
8
C, Capacitance (pF)
C
iss
1000
C
oss
C
rss
500
6
4
2
0
1
10
100
A
0
0
5
10
FOR TEST CIRCUIT
SEE FIGURE 12
15
20
25
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150°C
T
J
= 25°C
-I
D
, Drain Current (A)
I
10
1ms
1
1
0.1
0.3
0.6
0.9
1.2
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
V
GS
= 0V
A
100
1.5
-V
DS
, Drain-to-Source Voltage (V)
-V
SD
, Source-to-Drain Voltage (V)
Fig. 7
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-11-16
AUIRF7304Q
5.0
4.0
-I
D
, Drain Current (A)
3.0
2.0
1.0
Fig 10a.
Switching Time Test Circuit
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
2015-11-16
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