IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYW29E-100
Ultrafast power diode
17 September 2013
Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
Fast switching
Guaranteed ESD capability
High thermal cycling performance
Low on-state loss
Low thermal resistance
Rugged: reverse voltage surge capability
Soft recovery minimizes power-consuming oscillations
3. Applications
•
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 128 °C; square-wave
pulse;
Fig. 1; Fig. 2
I
F
= 8 A; T
j
= 150 °C;
Fig. 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
Fig. 5; Fig. 7
Electrostatic discharge
V
ESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ
-
-
8
kV
-
0.8
0.895
V
Conditions
Min
-
-
Typ
-
-
Max
100
8
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
20
25
ns
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TO
-22
0
AC
NXP Semiconductors
BYW29E-100
Ultrafast power diode
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; cathode
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220AC (SOD59)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYW29E-100
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
δ = 0.5 ; T
mb
≤ 128 °C; square-wave
pulse;
Fig. 1; Fig. 2
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 128 °C;
square-wave pulse
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse
I
RRM
repetitive peak reverse current
δ = 0.001 ; t
p
= 2 µs
-
0.2
A
-
80
A
-
88
A
-
16
A
Conditions
Min
-
-
-
-
Max
100
100
100
8
Unit
V
V
V
A
BYW29E-100
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© NXP N.V. 2013. All rights reserved
Product data sheet
17 September 2013
2 / 10
NXP Semiconductors
BYW29E-100
Ultrafast power diode
Symbol
I
RSM
T
stg
T
j
V
ESD
12
P
tot
(W)
8
Parameter
non-repetitive peak reverse
current
storage temperature
junction temperature
Conditions
t
p
= 100 µs
Min
-
-40
-
Max
0.2
150
150
Unit
A
°C
°C
Electrostatic discharge
electrostatic discharge voltage
HBM; C = 250 pF; R = 1.5 kΩ
8
P
tot
(W)
6
2.8
4
4.0
2.2
1.9
-
8
003aaj508
kV
003aaj507
δ=1
a = 1.57
0.5
0.2
0.1
4
2
0
0
4
8
I
F(AV)
(A)
12
0
0
2
4
6
I
F(AV)
(A)
8
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
8. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 3
Min
-
Typ
-
Max
2.7
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
BYW29E-100
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© NXP N.V. 2013. All rights reserved
Product data sheet
17 September 2013
3 / 10
NXP Semiconductors
BYW29E-100
Ultrafast power diode
10
Z
th(j-mb)
(K/W)
1
003aaj513
10
-1
P
δ=
t
p
T
10
-2
t
p
t
T
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
9. Characteristics
Table 6.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 8 A; T
j
= 25 °C;
Fig. 4
I
F
= 20 A; T
j
= 25 °C;
Fig. 4
I
F
= 8 A; T
j
= 150 °C;
Fig. 4
I
R
reverse current
V
R
= 100 V; T
j
= 25 °C
V
R
= 100 V; T
j
= 100 °C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A; V
R
= 30 V; dI
F
/dt = 20 A/µs;
T
j
= 25 °C;
Fig. 5; Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; ramp recovery;
Fig. 5; Fig. 7
I
F
= 0.5 A; I
R
= 1 A; I
R(meas)
= 0.25 A;
T
j
= 25 °C; step recovery;
Fig. 8
V
FRM
forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 10 A/µs; T
j
= 25 °C;
Fig. 9
-
1
-
V
-
15
20
ns
-
20
25
ns
-
4
11
nC
Min
-
-
-
-
-
Typ
0.92
1.1
0.8
2
0.2
Max
1.05
1.3
0.895
10
0.6
Unit
V
V
V
µA
mA
Static characteristics
BYW29E-100
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
17 September 2013
4 / 10
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