AUTOMOTIVE GRADE
Features
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AUIRF1405ZS-7P
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Automotive Qualified *
V
DSS
= 55V
R
DS(on)
= 4.9mΩ
G
S
Description
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
I
D
= 120A
This HEXFET
®
Power MOSFET utilizes the
latest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of this design are a 175°C
junction operating temperature, fast switching
speed and improved repetitive avalanche
rating.These features combine to make this
design an extremely efficient and reliable device
for use in a wide variety of applications.
D
2
Pak 7 Pin
Base Part Number
AUIRF1405ZS-7P
Package Type
D2Pak- 7 Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF1405ZS-7P
AUIRF1405ZS-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and
functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Max.
150
100
120
590
230
1.5
± 20
250
See Fig.12a,12b,15,16
-55 to + 175
°C
300 (1.6mm from case )
W
W/°C
V
mJ
A
mJ
A
Units
c
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
c
d
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
Soldering Temperature, for 10 seconds
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
i
Parameter
Typ.
Max.
0.65
40
Units
°C/W
Junction-to-Ambient (PCB Mount, steady state)
hi
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
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2015 International Rectifier
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February 27, 2015
AUIRF1405ZS-7P
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
SMD
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
55
–––
–––
2.0
108
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.054
3.7
–––
–––
–––
–––
–––
–––
150
37
64
16
140
170
130
4.5
7.5
5360
1310
340
6080
920
1700
Max.
–––
–––
4.9
4.0
–––
20
250
200
-200
230
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
nH
ns
nC
nA
Units
V
mΩ
V
S
μA
Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 88A
V
DS
= 10V, I
D
= 88A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 88A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 88A
R
G
= 5.0Ω
V
GS
= 10V
V/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 150μA
e
e
d
D
G
S
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
63
160
Max.
150
A
590
1.3
95
240
V
ns
nC
Units
showing the
integral reverse
G
S
Conditions
MOSFET symbol
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 88A, V
GS
= 0V
di/dt = 100A/μs
e
T
J
= 25°C, I
F
= 88A, V
DD
= 28V
e
Notes:
Repetitive rating; pulse width limited by
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
max. junction temperature. (See fig. 11).
repetitive avalanche performance.
Limited by T
Jmax
, starting T
J
= 25°C,
This is applied to D
2
Pak, when mounted on 1" square PCB
L=0.064mH, R
G
= 25Ω, I
AS
= 88A, V
GS
=10V.
( FR-4 or G-10 Material ). For recommended footprint and
Part not recommended for use above this value.
soldering techniques refer to application note #AN-994.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
R
θ
is measured at T
J
of approximately 90°C.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
2
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AUIRF1405ZS-7P
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
10
4.5V
10
≤
60μs PULSE WIDTH
1
0.1
1
Tj = 25°C
10
1
100
1000
0.1
1
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
200
Gfs, Forward Transconductance (S)
175
150
125
100
75
50
25
0
0
25
50
75
100 125 150 175 200
ID,Drain-to-Source Current (A)
VDS = 10V
380μs PULSE
WIDTH
TJ = 175°C
TJ = 25°C
ID, Drain-to-Source Current
(Α)
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
≤60μs
PULSE WIDTH
0
2
4
6
8
10
12
0.1
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
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AUIRF1405ZS-7P
100000
C oss = C ds + C gd
10000
Ciss
Coss
1000
Crss
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
12.0
ID= 88A
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 44V
VDS= 28V
C, Capacitance(pF)
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
10000
1000
100
1msec
10
1
0.1
0.01
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Tc = 25°C
Tj = 175°C
Single Pulse
DC
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
T J = 175°C
100
10
T J = 25°C
1
0.0
0.5
1.0
1.5
VGS = 0V
2.0
2.5
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
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Fig 8.
Maximum Safe Operating Area
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AUIRF1405ZS-7P
150
125
ID, Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 88A
VGS = 10V
2.0
100
75
50
25
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
Ri (°C/W)
0.1707
0.1923
0.2885
τi
(sec)
0.000235
0.000791
0.008193
τ
1
τ
2
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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February 27, 2015
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