STN1NF20
N-channel 200 V, 1.1
Ω
1 A SOT-223
,
STripFET™ II Power MOSFET
Features
Order code
STN1NF20
■
■
■
V
DSS
200 V
R
DS(on)
max
< 1.5
Ω
I
D
1A
4
100% avalanche tested
Low gate charge
Exceptional dv/dt capability
1
SOT-223
2
3
Applications
■
Switching applications
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET™ process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
1NF20
Package
SOT-223
Packaging
Tape and reel
Order code
STN1NF20
November 2011
Doc ID 022321 Rev 1
1/12
www.st.com
12
Contents
STN1NF20
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Doc ID 022321 Rev 1
STN1NF20
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
GS
I
D
I
D
I
DM (1)
P
TOT
dv/dt
(2)
T
j
T
stg
Absolute maximum ratings
Parameter
Gate-source voltage
Drain current continuous T
amb
= 25 °C
Drain current continuous T
amb
= 100 °C
Drain current pulsed
Total dissipation at T
amb
= 25 °C
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Value
± 20
1
1
4
2
10
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
1. Pulse width limited by safe operating area.
2. Isd
≤
1 A, di/dt
≤
200 A/µs, V
DD
≤
80% V
(BR)DSS.
Table 3.
Symbol
R
thj-amb
Thermal data
Parameter
Thermal resistance junction to ambient
Value
62.50
Unit
°C/W
Table 4.
Symbol
I
AR
E
AS
Thermal data
Parameter
Avalanche current, repetetive or not repetetive
(1)
Single pulse avalanche energy
(2)
Value
1
70
Unit
A
mJ
1. Pulse width limited by T
JMAX.
2. Starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Doc ID 022321 Rev 1
3/12
Electrical characteristics
STN1NF20
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 1 mA, V
GS
= 0
Min.
200
1
50
±100
2
3
1.1
4
1.5
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
V
DS
= 200 V
Zero gate voltage
drain current (V
GS
= 0) V
DS
= 200 V, T
C
=125 °C
Gate-body leakage
current
V
GS
= ± 20 V, V
DS
=0
Gate threshold voltage V
GS
= V
DS
, I
D
= 250 µA
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 0.5 A
Table 6.
Symbol
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Instrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
Typ.
90
30
4
4.8
5.7
1.1
3.0
Max.
Unit
pF
pF
pF
Ω
nC
nC
nC
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
-
f=1 MHz open drain
V
DD
= 160 V, I
D
= 1 A,
V
GS
= 10 V
(see
Figure 14)
-
-
-
-
4/12
Doc ID 022321 Rev 1
STN1NF20
Electrical characteristics
Table 7.
Symbol
t
d(v)
t
r
t
f
t
c(off)
Switching times
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
V
DD
= 100 V, I
D
= 0.5 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see
Figure 13)
Min.
Typ.
4
5.6
12.4
15.8
Max
Unit
ns
ns
ns
ns
-
-
Table 8.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 1 A, V
GS
= 0
Test conditions
Min.
Typ.
Max.
1
4
1.6
51.8
90.7
3.5
58.0
106.7
3.7
Unit
A
A
V
ns
nC
A
ns
nC
A
-
-
-
V
SD (2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Reverse recovery time
I
SD
= 1 A, di/dt = 100 A/µs
Reverse recovery charge V
DD
= 20 V
Reverse recovery current (see
Figure 15)
Reverse recovery time
I
SD
= 1 A, di/dt = 100 A/µs
Reverse recovery charge V
DD
= 20 V, T
j
= 150 °C
Reverse recovery current (see
Figure 15)
-
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022321 Rev 1
5/12
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