VS-8EWH02FN-M3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
• Hyperfast recovery time
2, 4
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Q
rr
and soft
recovery
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
N/C
3
Anode
TO-252AA (D-PAK)
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-252AA (D-PAK)
8A
200 V
0.75 V
23 ns
175 °C
Single die
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 156 °C
T
J
= 25 °C
T
C
= 156 °C, f = 20 kHz, d = 50 %
TEST CONDITIONS
VALUES
200
8
140
16
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.91
0.75
-
6
22
8
MAX.
-
0.97
0.85
5
60
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 05-Oct-16
Document Number: 93259
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWH02FN-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
23
27
24
33
2.3
4.3
27
70
MAX.
27
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Approximate weight
Marking device
Case style D-PAK (TO-252AA)
SYMBOL
T
J
, T
Stg
R
thJC
TEST CONDITIONS
MIN.
-65
-
TYP.
-
1.7
0.3
0.01
8EWH02FN
MAX.
175
2.5
UNITS
°C
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 °C
I
R
- Reverse Current (μA)
10
1
0.1
0.01
0.001
0.0001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
1
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 05-Oct-16
Document Number: 93259
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWH02FN-M3
www.vishay.com
100
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
10
0
50
100
150
200
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
1
Single
pulse
(thermal resistance)
0.1
0.00001
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
12
DC
160
150
140
130
120
0
2
4
6
8
10
12
14
Average Power Loss (W)
170
10
8
RMS limit
6
4
2
DC
0
0
2
4
6
8
10
12
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Square
wave (D = 0.50)
Rated V
R
applied
See
note (1)
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
-
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 05-Oct-16
Document Number: 93259
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWH02FN-M3
www.vishay.com
50
45
40
120
100
80
8 A, T
J
= 125 °C
30
25
20
15
10
100
8 A, T
J
= 25 °C
20
0
100
8 A, T
J
= 125 °C
Vishay Semiconductors
Q
rr
(nC)
35
t
rr
(ns)
60
40
8 A, T
J
= 25 °C
1000
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
(1)
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 05-Oct-16
Document Number: 93259
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8EWH02FN-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
8
2
E
3
W
4
H
5
02
6
FN
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (8 = 8 A)
Circuit configuration:
E = single diode
Package identifier:
W = D-PAK
H = hyperfast recovery
Voltage rating (02 = 200 V)
FN = TO-252AA
None = tube
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-8EWH02FN-M3
VS-8EWH02FNTR-M3
VS-8EWH02FNTRL-M3
VS-8EWH02FNTRR-M3
QUANTITY PER T/R
75
2000
3000
3000
MINIMUM ORDER QUANTITY
3000
2000
3000
3000
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95627
www.vishay.com/doc?95176
www.vishay.com/doc?95033
www.vishay.com/doc?95384
Revision: 05-Oct-16
Document Number: 93259
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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