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CY7C2563XV18-633BZC

产品描述SRAM 72MB (4Mx18) 1.8v 633MHz QDR II SRAM
产品类别存储    存储   
文件大小1MB,共29页
制造商Cypress(赛普拉斯)
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CY7C2563XV18-633BZC概述

SRAM 72MB (4Mx18) 1.8v 633MHz QDR II SRAM

CY7C2563XV18-633BZC规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Cypress(赛普拉斯)
零件包装代码BGA
包装说明LBGA, BGA165,11X15,40
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Factory Lead Time1 week
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)633 MHz
I/O 类型SEPARATE
JESD-30 代码R-PBGA-B165
JESD-609代码e0
长度15 mm
内存密度75497472 bit
内存集成电路类型QDR SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量165
字数4194304 words
字数代码4000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织4MX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)235
电源1.5,1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流1.165 A
最小待机电流1.7 V
最大压摆率1.165 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间20
宽度13 mm

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CY7C2563XV18/CY7C2565XV18
72-Mbit QDR
®
II+ Xtreme SRAM Four-Word
Burst Architecture (2.5 Cycle Read Latency) with ODT
72-Mbit QDR
®
II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
Configurations
With Read Cycle Latency of 2.5 cycles
CY7C2563XV18 – 4M × 18
CY7C2565XV18 – 2M × 36
Separate independent read and write data ports
Supports concurrent transactions
633 MHz clock for high bandwidth
Four-word burst for reducing address bus frequency
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 1266 MHz) at 633 MHz
Available in 2.5 clock cycle latency
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Data valid pin (QVLD) to indicate valid data on the output
On-die termination (ODT) feature
Supported for D
[x:0]
, BWS
[x:0]
, and K/K inputs
Single multiplexed address input bus latches address inputs
for read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR
®
II+ Xtreme operates with 2.5 cycle read latency when
DOFF is asserted HIGH
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
Available in × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V ± 0.1 V; I/O V
DDQ
= 1.4 V to 1.6 V
Supports 1.5 V I/O supply
HSTL inputs and variable drive HSTL output buffers
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Phase-locked loop (PLL) for accurate data placement
Functional Description
The CY7C2563XV18 and CY7C2565XV18 are 1.8 V
Synchronous Pipelined SRAMs, equipped with QDR II+
architecture. Similar to QDR II architecture, QDR II+ architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR II+
architecture has separate data inputs and data outputs to
completely eliminate the need to “turn-around” the data bus that
exists with common I/O devices. Each port is accessed through
a common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR II+ Xtreme read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with four 18-bit
words (CY7C2563XV18), or 36-bit words (CY7C2565XV18) that
burst sequentially into or out of the device. Because data is
transferred into and out of the device on every rising edge of both
input clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turn-arounds”.
These devices have an on-die termination feature supported for
D
[x:0]
, BWS
[x:0]
, and K/K inputs, which helps eliminate external
termination resistors, reduce cost, reduce board area, and
simplify board routing.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
× 18
× 36
633 MHz
633
1165
1660
600 MHz
600
1100
1570
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-68997 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 23, 2017

CY7C2563XV18-633BZC相似产品对比

CY7C2563XV18-633BZC
描述 SRAM 72MB (4Mx18) 1.8v 633MHz QDR II SRAM
是否Rohs认证 不符合
厂商名称 Cypress(赛普拉斯)
零件包装代码 BGA
包装说明 LBGA, BGA165,11X15,40
针数 165
Reach Compliance Code compliant
ECCN代码 3A991.B.2.A
Factory Lead Time 1 week
最长访问时间 0.45 ns
其他特性 PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 633 MHz
I/O 类型 SEPARATE
JESD-30 代码 R-PBGA-B165
JESD-609代码 e0
长度 15 mm
内存密度 75497472 bit
内存集成电路类型 QDR SRAM
内存宽度 18
湿度敏感等级 3
功能数量 1
端子数量 165
字数 4194304 words
字数代码 4000000
工作模式 SYNCHRONOUS
最高工作温度 70 °C
组织 4MX18
输出特性 3-STATE
封装主体材料 PLASTIC/EPOXY
封装代码 LBGA
封装等效代码 BGA165,11X15,40
封装形状 RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE
并行/串行 PARALLEL
峰值回流温度(摄氏度) 235
电源 1.5,1.8 V
认证状态 Not Qualified
座面最大高度 1.4 mm
最大待机电流 1.165 A
最小待机电流 1.7 V
最大压摆率 1.165 mA
最大供电电压 (Vsup) 1.9 V
最小供电电压 (Vsup) 1.7 V
标称供电电压 (Vsup) 1.8 V
表面贴装 YES
技术 CMOS
温度等级 COMMERCIAL
端子面层 Tin/Lead (Sn/Pb)
端子形式 BALL
端子节距 1 mm
端子位置 BOTTOM
处于峰值回流温度下的最长时间 20
宽度 13 mm
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