VS-MBR350 (-M3), VS-MBR360 (-M3)
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3 A
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
Cathode
Anode
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
C-16
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-201AD (C-16)
3A
50 V, 60 V
0.64 V
15 mA at 125 °C
150 °C
Single die
5.0 mJ
• Designed and qualified for commercial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-MBR350..., VS-MBR360... axial leaded Schottky
rectifier has been optimized for very low forward voltage
drop, with moderate leakage. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
3 Apk, T
J
= 25 °C
CHARACTERISTICS
Rectangular waveform
VALUES
3.0
50/60
460
0.73
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak
reverse voltage
SYMBOL
V
R
V
RWM
50
50
60
60
V
VS-MBR350
VS-MBR350-M3
VS-MBR360
VS-MBR360-M3
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
L
= 50 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
3.0
460
80
5.0
1.0
mJ
A
A
UNITS
Revision: 13-Oct-11
Document Number: 93450
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR350 (-M3), VS-MBR360 (-M3)
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1.0 A
3.0 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
9.4 A
1.0 A
3.0 A
9.4 A
T
J
= 25 °C
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 100 °C
T
J
= 125 °C
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
V
R
= Rated V
R
T
J
= 125 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
0.58
0.73
1.06
0.49
0.64
0.89
0.6
8
15
190
9.0
10 000
pF
nH
V/µs
mA
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J (1)
, T
Stg
R
thJL (2)
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
30
1.2
0.042
Case style C-16
MBR350
MBR360
UNITS
°C
°C/W
g
oz.
Marking device
Notes
(1)
(2)
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
Revision: 13-Oct-11
Document Number: 93450
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR350 (-M3), VS-MBR360 (-M3)
www.vishay.com
Vishay Semiconductors
Allowable Lead Temperature (°C)
160
140
120
100
80
60
40
20
0
0
93450_04
I
F
- Instantaneous Forward Current (A)
100
DC
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Square
wave (D = 0.50)
80% Rated V
R
applied
see
note (1)
1
2
3
4
5
93450_01
V
FM
- Forward Voltage Drop (V)
I
F(AV)
- Average Forward Current (A)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
3
100
I
R
- Reverse Current (mA)
10
Average Power Loss (W)
T
J
= 150 °C
2.5
2
RMS Limit
1.5
1
0.5
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
DC
1
T
J
= 125 °C
0.1
0.01
T
J
= 25 °C
0.001
0
93450_02
20
40
60
93450_05
0
0.5 1
1.5
2
2.5
3
3.5
4
4.5
5
V
R
- Reverse Voltage (V)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
I
FSM
- Non-Repetitive Surge Current (A)
1000
1000
C
T
- Junction Capacitance (pF)
T = 25 °C
J
100
100
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
10
0
93450_03
10
10
100
1000
10 000
40
80
120
160
V
R
- Reverse Voltage (V)
93450_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 13-Oct-11
Document Number: 93450
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR350 (-M3), VS-MBR360 (-M3)
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
-
-
-
-
-
-
2
3
3
60
4
TR
5
-M3
6
Vishay Semiconductors product
Schottky MBR series
Current rating: 3 = 3 A
Voltage rating
50 = 50 V
60 = 60 V
TR = Tape and reel package
None = Bulk package
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR350
VS-MBR350TR
VS-MBR350-M3
VS-MBR350TR-M3
VS-MBR360
VS-MBR360TR
VS-MBR360-M3
VS-MBR360TR-M3
QUANTITY PER T/R
500
1200
500
1200
500
1200
500
1200
MINIMUM ORDER QUANTITY
500
1200
500
1200
500
1200
500
1200
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95242
www.vishay.com/doc?95304
www.vishay.com/doc?95338
Revision: 13-Oct-11
Document Number: 93450
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-201AD (C-16)
DIMENSIONS
in millimeters (inches)
Ø 5.8 (0.23)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
10.0 (0.39)
MAX.
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Revision: 29-Aug-11
Document Number: 95242
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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