VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge
(Power Modules), 90 A/110 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio, outline for easy connections
to power transistor and IGBT modules
• 4000 V
RMS
isolating voltage
• UL E78996 approved
MTK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
O
V
RRM
Package
Circuit configuration
90 A to 110 A
800 V to 1600 V
MTK
Three phase bridge
DESCRIPTION
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
T
J
Range
Range
CHARACTERISTICS
VALUES
90MT.K
90 (120)
T
C
50 Hz
60 Hz
50 Hz
60 Hz
90 (61)
770
810
3000
2700
30 000
800 to 1600
-40 to 150
-40 to 150
VALUES
110MT.K
110 (150)
90 (57)
950
1000
4500
4100
45 000
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
80
100
VS-90MT..K
VS-110MT..K
120
140
160
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1100
1300
1500
1700
10
I
RRM
MAXIMUM
AT T
J
= MAXIMUM
mA
Revision: 17-Aug-17
Document Number: 94352
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
VALUES
90MT.K
90 (120)
90 (61)
770
810
650
Initial
T
J
= T
J
maximum
680
3000
2700
2100
1900
30 000
0.89
1.05
5.11
4.64
1.6
4000
1.4
V
VALUES
110MT.K
110 (150)
90 (57)
950
1000
800
840
4500
4100
3200
2900
45 000
0.81
0.99
4.37
m
r
f2
V
FM
V
ISOL
(I >
x I
F(AV)
), T
J
maximum
I
pk
= 150 A, T
J
= 25 °C
t
p
= 400 μs single junction
T
J
= 25 °C, all terminal shorted
f = 50 Hz, t = 1 s
A
2
s
V
A
2
s
A
FORWARD CONDUCTION
PARAMETER
Maximum DC output current at case
temperature
Maximum peak, one-cycle
forward, non-repetitive surge current
SYMBOL
I
O
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
Low level value of
threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
RMS isolation voltage
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
Approximate weight
to heatsink
to terminal
SYMBOL
T
J
, T
Stg
DC operation per module
R
thJC
DC operation per junction
120° rect. conduction angle per module
120° rect. conduction angle per junction
R
thCS
Mounting surface smooth, flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 h to allow for the spread of the compound.
Lubricated threads.
0.21
1.26
0.25
1.47
0.03
4 to 6
3 to 4
176
Nm
g
TEST CONDITIONS
VALUES
90MT.K
VALUES
110MT.K
UNITS
°C
-40 to 150
0.18
1.07
0.21
1.25
°C/W
Revision: 17-Aug-17
Document Number: 94352
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
1000
150
140
90MT..K Series
Maximum Allowable Case
Temperature (°C)
130
120
110
100
90
80
70
60
50
0
25
50
75
100
125
+
~
-
120°
(Rect)
100
T
J
= 25 °C
T
J
= 150 °C
10
90MT..K Series
Per junction
1
0
1
2
3
4
5
Total Output Current (A)
Fig. 1 - Current Ratings Characteristics
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
400
400
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
350
300
250
200
150
100
50
0
0
90MT..K Series
T
J
= 150 °C
350
300
250
200
150
100
50
0
0.
0.2
12
W
R
K/
W
th
SA
=
0.3
K/
0.
05
120°
(Rect.)
K/W
K/
W
-
Δ
R
0.0
5K
/W
0.7
K/W
1.0 K
/W
1.5 K/W
20
40
60
80
100
120
0
25
50
75
100
125
150
Total Output Current (A)
Fig. 3 - Total Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
700
650
Peak Half Sine Wave
Forward Current (A)
Peal Half Sine Wave
Forward Current (A)
600
550
500
450
400
350
300
250
200
1
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
800
750
700
650
600
500
450
400
350
300
250
200
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
90MT..K Series
10
100
90MT..K Series
0.1
1.0
150
0.01
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94352
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
1000
150
140
110MT..K Series
Maximum Allowable Case
Temperature (°C)
130
120
110
100
90
80
70
60
50
0
20
40
60
80
100
120
140
160
~
-
+
120°
(Rect.)
100
T
J
= 25 °C
T
J
= 150 °C
10
110MT..K Series
Per junction
1
0
1
2
3
4
5
Total Output Current (A)
Fig. 6 - Current Ratings Characteristics
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
450
450
110MT..K Series
T
J
= 150 °C
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
400
350
300
250
200
150
100
50
0
0
400
350
300
250
200
150
100
50
0
0
0.
12
R
th
0.2
0.3
K/
W
SA
=
0.
K/W
05
K/
W
120°
(Rect.)
0.4
0.5
K/W
-
Δ
R
K/W
K/W
0.7
K/W
1.0 K
/W
1.5 K
/W
50
75
100
125
150
25
50
75
100
125
150
25
Total Output Current (A)
Fig. 8 - Total Power Loss Characteristics
Maximum Allowable Ambient
Temperature (°C)
900
800
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
700
600
500
400
300
200
1
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1000
900
800
700
600
500
400
300
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
110MT..K Series
110MT..K Series
10
100
200
0.01
0.1
1
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
Revision: 17-Aug-17
Document Number: 94352
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
R
thJC
= 1.26 K/W
R
thJC
= 1.07 K/W
(DC operation)
1
90MT..K Series
110MT..K Series
0.1
Per junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance Z
thJC
Characteristic
ORDERING INFORMATION TABLE
Device code
VS-
1
11
2
0
3
MT 160
4
5
K
PbF
6
1
2
3
4
5
6
-
-
-
-
-
-
Vishay Semiconductors product
Current rating code: 9 = 90 A (average)
11 = 110 A (average)
Three phase diodes bridge
Essential part number
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to
www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
+ D
A
B
C
~
-
E
F
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95004
Revision: 17-Aug-17
Document Number: 94352
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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