VS-10TTS08SPbF Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage Surface Mount Phase Control SCR, 10 A
4
2, 4
Anode
FEATURES
• Meets MSL level 1, per
LF maximum peak of 260 °C
• Designed
and
®
-JESD 47
JEDEC
qualified
J-STD-020,
according
2
3
1
1
Cathode
3
Gate
TO-263AB (D
2
PAK)
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-263AB (D
2
PAK)
Single SCR
6.5 A
800 V
< 1.15 V
15 mA
-40 to +125 °C
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are available in identical package outlines
DESCRIPTION
The VS-10TTS08SPbF high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
2.5
6.3
14.0
THREE-PHASE BRIDGE
3.5
9.5
18.5
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
Range
6.5 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
6.5
A
10
800
110
1.15
150
100
-40 to +125
V
A
V
V/μs
A/μs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
VS-10TTS08SPbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
I
RRM
/I
DRM
AT 125 °C
mA
1.0
Revision: 08-Jul-15
Document Number: 94562
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
TEST CONDITIONS
T
C
= 112 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied, T
J
= 125 °C
10 ms sine pulse, no voltage reapplied, T
J
= 125 °C
t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C
6.5 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
VALUES
6.5
10
95
110
45
64
640
1.15
17.3
0.85
0.05
1.0
30
50
V/μs
100
A/μs
mA
A
2
s
A
2
s
V
m
V
A
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A,
T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = Open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+I
GM
-V
GM
Anode supply = 6 V, resistive load, T
J
= - 65 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= - 65 °C
V
GT
V
GD
I
GD
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
20
15
10
1.2
1
0.7
0.2
0.1
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.8
3
100
μs
UNITS
Revision: 08-Jul-15
Document Number: 94562
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08SPbF Series
www.vishay.com
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
Marking device
Case style D
2
PAK (SMD-220)
SYMBOL
T
J
, T
Stg
T
S
R
thJC
R
thJA (1)
For 10 s (1.6 mm from case)
DC operation
TEST CONDITIONS
VALUES
-40 to +125
260
1.5
°C/W
40
2
0.07
10TTS08S
g
oz.
UNITS
°C
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
Maximum Allowable Case Temperature (°C)
10TTS08
R
thJC
(DC) = 1.5 K/W
120
Conduction Angle
Maximum Average On-state Power Loss (W)
125
8
7
6
5
4
3
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
115
30°
60°
110
90°
120°
180°
105
0
1
2
3
4
5
6
7
Average On-state Current (A)
2
1
0
0
1
2
3
4
5
6
7
Average On-state Current (A)
10TTS08
T
J
= 125°C
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
10TTS08
R
thJC
(DC) = 1.5 K/W
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
125
12
10
8
6
RMS Limit
4
2
0
0
2
4
6
8
10
12
Average On-state Current (A)
Conduction Period
120
Conduction Period
DC
180°
120°
90°
60°
30°
115
30°
60°
110
90°
120°
180° DC
105
0
2
4
6
8
10
12
Average On-state Current (A)
10TTS08
T
J
= 125°C
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 08-Jul-15
Document Number: 94562
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08SPbF Series
www.vishay.com
110
100
Peak Half
Sine
Wave
Forward Current (A)
90
80
70
60
50
40
1
10
Number of Equal Amplitude Half Cycle
Current Pulses (N)
100
VS-10TTS08
At any rated load condition and with
rated V
rrm
applied following
surge.
Initial Tj = 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Vishay Semiconductors
120
110
Peak Half
Sine
Wave
Forward Current (A)
100
90
80
70
60
50
40
0.01
VS-10TTS08
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
0.1
1
10
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
10TTS08
100
10
T
J
= 25°C
T
J
= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
Transient Thermal Impedance Z
thJC
(°C/W)
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
10TTS08
0.01
0.0001
0.1
0.001
0. 01
Square Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 08-Jul-15
Document Number: 94562
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10TTS08SPbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
10
2
-
-
-
-
-
-
-
-
T
3
T
4
S
5
08
6
S
7
TRL PbF
8
9
Vishay Semiconductors product
Current rating, RMS value
Circuit configuration:
T = single thyristor
Package:
T = TO-220AC
Type of silicon:
S = converter grade
Voltage code x 100 = V
RRM
S = TO-220 D
2
PAK (SMD-220) version
Tape and reel option:
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
PbF = lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-10TTS08SPbF
VS-10TTS08STRRPbF
VS-10TTS08STRLPbF
QUANTITY PER T/R
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Revision: 08-Jul-15
Document Number: 94562
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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