IS61LV12816L
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
•
•
•
•
•
•
•
•
•
•
High-speed access time: 8, 10 ns
Operating Current: 50mA (typ.)
Stand by Current: 700µA (typ.)
TTL and CMOS compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
ISSI
OCTOBER 2005
®
DESCRIPTION
The
ISSI
IS61LV12816L is a high-speed, 2,097,152-bit
static RAM organized as 131,072 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV12816L is packaged in the JEDEC standard
44-pin TSOP (Type II), 44-pin LQFP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128Kx16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
1
IS61LV12816L
PIN CONFIGURATION
48-Pin mini BGA (B)
1
2
3
4
5
6
ISSI
44-Pin LQFP (LQ)
A16
A15
A14
A13
A12
A11
A10
A9
OE
UB
LB
®
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
V
DD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
NC
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
NC
I/O
0
I/O
2
V
DD
GND
I/O
6
I/O
7
NC
CE
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
44 43 42 41 40 39 38 37 36 35 345
33
1
32
2
31
3
30
4
29
5
TOP VIEW
28
6
27
7
26
8
25
9
24
10
23
11
12 13 14 15 16 17 18 19 20 21 22
WE
A0
A1
A2
A3
A4
NC
A5
A6
A7
A8
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
PIN DESCRIPTIONS
A0-A16
I/O0-I/O15
CE
OE
WE
LB
UB
NC
V
DD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
3
IS61LV12816L
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
T
Note:
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to 4.0V
–0.5 to V
DD
+ 0.5
–65 to + 150
1.0
Unit
V
V
°C
W
ISSI
®
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
OPERATING RANGE
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
V
DD
(8 n
S
)
3.3V + 10%, -5%
3.3V + 10%, -5%
V
DD
(10 n
S
)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2
–0.3
Max.
—
0.4
V
DD
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
–1
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
IS61LV12816L
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
Parameter
V
DD
Operating
Supply Current
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
Test Conditions
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = max
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
typ.
(2)
-8 ns
Min. Max.
—
—
—
—
—
—
—
—
65
70
50
30
35
3
4
700
-10 ns
Min. Max.
—
—
—
—
—
—
—
—
60
65
50
25
30
3
4
700
ISSI
Unit
mA
®
I
SB
1
mA
I
SB
2
mA
mA
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.3V, T
A
=25
o
C. Not 100% tested.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. F
10/27/05
5
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