AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
S
D
G
TO-220AB
AUIRF3805
AUIRF3805
AUIRF3805S
AUIRF3805L
55V
2.6m
3.3m
210A
160A
D
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
Base part number
AUIRF3805
AUIRF3805L
AUIRF3805S
Package Type
TO-220
TO-262
D
2
-Pak
S
G
D
2
Pak
AUIRF3805S
G
S
D
TO-262
AUIRF3805L
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF3805
AUIRF3805L
AUIRF3805S
AUIRF3805STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
210
150
160
890
300
2.0
± 20
650
940
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.50
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-9-30
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRF3805/S/L
Min. Typ. Max. Units
Conditions
55
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.051 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
2.6
3.3 m V
GS
= 10V, I
D
= 75A
**
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
75
––– –––
S V
DS
= 25V, I
D
= 75A**
––– –––
20
V
DS
=55V, V
GS
= 0V
µA
––– ––– 250
V
DS
=55V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
190
52
72
150
20
93
87
4.5
7.5
7960
1260
630
4400
980
1550
290
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 75A**
nC
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A**
ns
R
G
= 2.6
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A**,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 75A**, V
DD
= 28V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
Output Capacitance
C
oss
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Typ. Max. Units
––– 210
–––
–––
36
47
890
1.3
54
71
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
This value determined from sample failure population, starting T
J
= 25°C, L = 0.23mH, R
G
= 25, I
AS
= 75A, V
GS
=10V.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This is only applied to TO-220AB package.
This is applied to D
2
Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R
is measured at T
J
of approximately 90°C
TO-220 device will have an Rth value of 0.45°C/W.
** All AC and DC test condition based on old Package limitation current = 75A.
2
2015-9-30
AUIRF3805/S/L
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
4.5V
10
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000.0
200
ID, Drain-to-Source Current
)
100.0
TJ = 175°C
Gfs, Forward Transconductance (S)
TJ = 25°C
160
TJ = 175°C
120
10.0
TJ = 25°C
1.0
80
VDS = 20V
0.1
4.0
5.0
6.0
40
60µs PULSE WIDTH
7.0
8.0
VDS = 10V
380µs PULSE WIDTH
0
20
40
60
80 100 120 140 160 180
0
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Transconductance
vs. Drain Current
2015-9-30
3
AUIRF3805/S/L
14000
12000
10000
8000
6000
4000
2000
0
1
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
ID= 75A
16
VDS = 44V
VDS= 28V
C, Capacitance (pF)
Ciss
12
8
Coss
Crss
4
0
10
100
0
50
100
150
200
250
300
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
TJ = 175°C
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD, Reverse Drain Current (A)
100.0
1000
100µsec
100
10msec
10
1msec
10.0
TJ = 25°C
1.0
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
0.1
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2015-9-30
AUIRF3805/S/L
LIMITED BY PACKAGE
200
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
240
2.0
ID = 75A
VGS = 10V
160
120
80
40
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
J
1
2
R
2
R
2
C
1
2
C
0.01
J
Ri (°C/W)
0.2653
0.2347
i
(sec)
0.001016
0.012816
Ci=
iRi
Ci=
iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-9-30
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