IS66/67WVE4M16EALL/BLL/CLL
IS66/67WVE4M16TALL/BLL/CLL
64Mb Async/Page PSRAM
JULY 2017
Overview
The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device
containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M
words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where
data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby
current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate
power supply from the device core.
Features
Asynchronous and page mode interface
Dual voltage rails for optional performance
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
Page mode read access
Interpage Read access : 60ns, 70ns
Intrapage Read access : 25ns
Low Power Consumption
Asynchronous Operation < 30 mA
Intrapage Read < 23mA
Standby < 200 uA (max.) at -40°C~85°C
Deep power-down (DPD)
ALL/CLL: < 3µA (Typ)
BLL: < 10µA (Typ)
Notes:
Low Power Feature
Temperature Controlled Refresh
Partial Array Refresh
Deep power-down (DPD) mode
Operating temperature Range
Industrial: -40°C~85°C
Automotive A1: -40°C~85°C
Automotive A2: -40°C~105°C
Packages:
48-ball TFBGA
1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at
sram@issi.com
for additional information.
Copyright © 2017 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. D1 | Junly 2017
www.issi.com
- SRAM@issi.com
1
IS66/67WVE4M16EALL/BLL/CLL
IS66/67WVE4M16TALL/BLL/CLL
General Description
PSRAM products are high-speed, CMOS pseudo-static random access memory developed
for low-power, portable applications. The 64Mb DRAM core device is organized
as 4 Meg x 16 bits. These devices include the industry-standard, asynchronous memory
interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings.
For seamless operation on an asynchronous memory bus, PSRAM products incorporated a
transparent self-refresh mechanism. The hidden refresh requires no additional support
from the system memory controller and has no significant impact on device read/write
performance.
A user-accessible configuration registers (CR) defines how the PSRAM device performs on-
chip refresh and whether page mode read accesses are permitted. This register is
automatically loaded with a default setting during power-up and can be updated at any
time during normal operation.
Special attention has been focused on current consumption during self-refresh. This
product includes two system-accessible mechanisms to minimize refresh current.
Setting sleep enable (ZZ#) to LOW enables one of two low-power modes: partial-array
refresh (PAR) or deep power-down (DPD). PAR limits refresh to only that part of the
DRAM array that contains essential data. DPD halts refresh operation altogether and is
used when no vital information is stored in the device. The system-configurable refresh
mechanisms are accessed through the CR.
A0~A21
Address
Decode Logic
4096K X 16
DRAM
Memory Array
Input
/Output
Mux
And
Buffers
Configuration Register
(CR)
CE#
WE#
OE#
LB#
UB#
ZZ#
Control
Logic
DQ0~DQ15
[ Functional Block Diagram]
Rev. D1 | Junly 2017
www.issi.com
- SRAM@issi.com
2
IS66/67WVE4M16EALL/BLL/CLL
IS66/67WVE4M16TALL/BLL/CLL
48Ball TFBGA Ball Assignment
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB#
DQ8
DQ9
VSSQ
OE#
UB#
DQ10
DQ11
A0
A3
A5
A17
A1
A4
A6
A7
A2
CE#
DQ1
DQ3
ZZ#
DQ0
DQ2
VDD
VDDQ
DQ14
DQ15
A18
DQ12
DQ13
A19
A8
A21
A14
A12
A9
A16
A15
A13
A10
DQ4
DQ5
WE#
A11
VSS
DQ6
DQ7
A20
[Top View]
(Ball Down)
Rev. D1 | Junly 2017
www.issi.com
- SRAM@issi.com
3
IS66/67WVE4M16EALL/BLL/CLL
IS66/67WVE4M16TALL/BLL/CLL
48-pin TSOP-I (Top View)
Notes:
1. The 48-pin TSOP-I package option is not yet available. Please contact SRAM Marketing at
sram@issi.com
for additional information.
Rev. D1 | Junly 2017
www.issi.com
- SRAM@issi.com
4
IS66/67WVE4M16EALL/BLL/CLL
IS66/67WVE4M16TALL/BLL/CLL
Signal Descriptions
All signals for the device are listed below in Table 1.
Table 1. Signal Descriptions
Symbol
VSS
VSSQ
DQ0~DQ15
A0~A21
LB#
UB#
CE#
OE#
WE#
ZZ#
Type
Power Supply
Power Supply
Input / Output
Input
Input
Input
Input
Input
Input
Input
Description
All VSS supply pins must be connected to Ground
All VSSQ supply pins must be connected to Ground
Data Inputs/Outputs (DQ0~DQ15)
Address Input(A0~A21)
Lower Byte select
Upper Byte select
Chip Enable/Select
Output Enable
Write Enable
Sleep enable : When ZZ# is LOW, the CR can be loaded, or the device
can enter one of two low-power modes ( DPD or PAR).
ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
Rev. D1 | Junly 2017
www.issi.com
- SRAM@issi.com
5
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