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Datasheet> 器件分类 > 模拟混合信号IC> 驱动程序和接口> ISL6622BCRZ-T
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ISL6622BCRZ-T

产品描述Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1
产品类别模拟混合信号IC    驱动程序和接口   
文件大小575KB，共11页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
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ISL6622BCRZ-T概述

Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1

ISL6622BCRZ-T规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Renesas(瑞萨电子)
零件包装代码DFN
包装说明HVSON, SOLCC10,.12,20
针数10
Reach Compliance Codecompliant
ECCN代码EAR99
高边驱动器YES
接口集成电路类型AND GATE BASED MOSFET DRIVER
JESD-30 代码S-PDSO-N10
JESD-609代码e3
长度3 mm
湿度敏感等级1
功能数量1
端子数量10
最高工作温度70 °C
最低工作温度
标称输出峰值电流3 A
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC10,.12,20
封装形状SQUARE
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度（摄氏度）260
电源12 V
认证状态Not Qualified
座面最大高度1 mm
最大供电电压13.2 V
最小供电电压6.8 V
标称供电电压12 V
电源电压1-最大13.2 V
电源电压1-分钟4.75 V
表面贴装YES
温度等级COMMERCIAL
端子面层Matte Tin (Sn) - annealed
端子形式NO LEAD
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3 mm
Base Number Matches1

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DATASHEET
ISL6622B
VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
The ISL6622B is a high frequency MOSFET driver designed
to drive upper and lower power N-Channel MOSFETs in a
synchronous rectified buck converter topology. The advanced
PWM protocol of ISL6622B is specifically designed to work
with Intersil VR11.1 controllers and combined with
N-Channel MOSFETs, form a complete core-voltage regulator
solution for advanced microprocessors. When ISL6622B
detects a PSI PWM protocol sent by an Intersil VR11.1
controller, it activates Diode Emulation (DE) operation;
otherwise, it operates in normal Continuous Conduction
Mode (CCM) PWM mode.
In the 8 Ld SOIC package, the ISL6622B drives the upper
gate to 12V while the lower drive voltage is fixed at 5.75V. The
10 Ld DFN part offers more flexibility: the upper gate can be
driven from 5V to 12V via the UVCC pin, while the lower gate
has a resistor-selectable drive voltage of 5.75V, 6.75V, and
7.75V (typically). This provides the flexibility necessary to
optimize applications involving trade-offs between gate
charge and conduction losses.
To further enhance light load efficiency, the ISL6622B
enables diode emulation operation during PSI mode. This
allows for Discontinuous Conduction Mode (DCM) operation
by detecting when the inductor current reaches zero and
subsequently turning off the low side MOSFET to prevent it
from sinking current.
An advanced adaptive shoot-through protection is integrated
to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize dead time. The
ISL6622B has a 20k
integrated high-side MOSFET
gate-to-source resistor to prevent self turn-on due to high
input bus dV/dt. This driver also has an overvoltage
protection feature operational while VCC is below the POR
threshold: the PHASE node is connected to the gate of the
low side MOSFET (LGATE) via a 10k
resistor, limiting the
output voltage of the converter close to the gate threshold of
the low side MOSFET, dependent on the current being
shunted, which provides some protection to the load should
the upper MOSFET(s) be shorted prior to start-up.
FN6602
Rev 1.00
March 19, 2009
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
• Integrated LDO with Selectable Lower Gate Drive Voltage
for Light Load Efficiency Optimization
• 36V Internal Bootstrap Diode
• Advanced PWM Protocol (Patent Pending) to Support PSI
Operation
• Diode Emulation for Enhanced Light Load Efficiency
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Integrated UGATE-to-PHASE Resistor for Increased
Upper MOSFET Input Bus High dV/dt Immunity
• Pre-POR Overvoltage Protection at Start-Up and
Shutdown
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
- Bottom Copper Pad for Enhanced Heat Sinking
• Pb-Free (RoHS Compliant)
Applications
• High Light-Load Efficiency Voltage Regulators
• Core Regulators for Advanced Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 “Designing Stable Compensation
Networks for Single Phase Voltage Mode Buck
Regulators” for Power Train Design, Layout Guidelines,
and Feedback Compensation Design
FN6602 Rev 1.00
March 19, 2009
Page 1 of 11

ISL6622BCRZ-T相似产品对比

ISL6622BCRZ-T ISL6622BCBZ ISL6622BIRZ-T ISL6622BIBZ-T ISL6622BIBZ ISL6622BCBZ-T
描述 Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1 Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1 Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1 Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1 Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1 Gate Drivers SYNCH BUCK MSFT HV DRVR NOLDO VR11 1
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
零件包装代码 DFN SOIC DFN SOIC SOIC SOIC
包装说明 HVSON, SOLCC10,.12,20 ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 HVSON, SOLCC10,.12,20 ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8 ROHS COMPLIANT, PLASTIC, MS-012AA, SOIC-8
针数 10 8 10 8 8 8
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
高边驱动器 YES YES YES YES YES YES
接口集成电路类型 AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER AND GATE BASED MOSFET DRIVER
JESD-30 代码 S-PDSO-N10 R-PDSO-G8 S-PDSO-N10 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e3 e3 e3 e3 e3 e3
长度 3 mm 4.9 mm 3 mm 4.9 mm 4.9 mm 4.9 mm
湿度敏感等级 1 1 1 1 1 1
功能数量 1 1 1 1 1 1
端子数量 10 8 10 8 8 8
最高工作温度 70 °C 70 °C 85 °C 85 °C 85 °C 70 °C
标称输出峰值电流 3 A 3 A 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HVSON SOP HVSON SOP SOP SOP
封装等效代码 SOLCC10,.12,20 SOP8,.25 SOLCC10,.12,20 SOP8,.25 SOP8,.25 SOP8,.25
封装形状 SQUARE RECTANGULAR SQUARE RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 260 260 260 260
电源 12 V 12 V 12 V 12 V 12 V 12 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1 mm 1.75 mm 1 mm 1.75 mm 1.75 mm 1.75 mm
最大供电电压 13.2 V 13.2 V 13.2 V 13.2 V 13.2 V 13.2 V
最小供电电压 6.8 V 6.8 V 6.8 V 6.8 V 6.8 V 6.8 V
标称供电电压 12 V 12 V 12 V 12 V 12 V 12 V
电源电压1-最大 13.2 V 13.2 V 13.2 V 13.2 V 13.2 V 13.2 V
电源电压1-分钟 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V
表面贴装 YES YES YES YES YES YES
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
端子形式 NO LEAD GULL WING NO LEAD GULL WING GULL WING GULL WING
端子节距 0.5 mm 1.27 mm 0.5 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 30 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED
宽度 3 mm 3.9 mm 3 mm 3.9 mm 3.9 mm 3.9 mm
Base Number Matches 1 1 1 1 1 1

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