d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W for channel-1 and 85 °C/W for channel-2.
Document Number: 69090
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ700DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 15 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 15 A
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 20 A
Channel-1
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 15 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.3
0.2
1300
3860
290
760
132
350
20
55
9.5
27
3.2
9.2
2.4
7.1
1.3
1
2.6
2
35
85
15
45
nC
pF
g
fs
V
DS
= 10 V, I
D
= 15 A
V
DS
= 10 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
30
0.007
0.0086
0.0047 0.0058
0.0088 0.0108
0.0054 0.0066
60
100
S
0.8
0.8
20
20
21
21
- 5.8
- 5.8
2.2
2.2
± 100
± 100
1
1
10
10
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
Document Number: 69090
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ700DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 10 V, R
L
= 10
I
D
1 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 2 A, V
GS
= 0 V
I
S
= 2.3 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 2 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 2.3 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
9
13
8
8
25
52
8
15
8
12
9
8
25
47
8
10
Max.
15
20
15
15
40
80
15
25
15
20
15
15
40
75
15
15
14.7
16
60
60
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.8
0.8
25
40
13
31
12
21
13
19
1.2
1.2
50
80
25
60
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69090
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ700DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
45
V
GS
= 3
V
1.2
1.0
0.8
30
0.6
0.4
T
C
= 25 °C
0.2
T
C
= 125 °C
T
C
= - 55 °C
15
0
0.0
0.3
0.6
0.9
1.2
1.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.016
1800
Transfer Characteristics
1500
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
0.012
V
GS
= 4.5
V
0.008
V
GS
= 10
V
0.004
300
C
rss
0.000
0
15
30
I
D
- Drain Current (A)
45
60
0
0
5
10
15
20
C
iss
1200
900
600
C
oss
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 15 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 10
V
6
V
DS
= 5
V
V
DS
= 15
V
4
1.8
I
D
= 15 A
1.5
Capacitance
V
GS
= 10
V
1.2
V
GS
= 4.5
V
0.9
2
0
0
5
10
15
20
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 69090
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ700DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.030
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
10
0.025
0.020
0.015
T
J
= 125 °C
0.010
0.1
T
J
= - 50 °C
0.01
0.005
T
J
= 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
60
On-Resistance vs. Gate-to-Source Voltage
50
0.2
V
GS(th)
Variance
(V)
40
I
D
= 5 mA
- 0.4
I
D
= 250
µA
10
Power (W)
- 0.1
30
20
- 0.7
- 1.0
-50
0
-25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power
10
µs
10
I
D
- Drain Current (A)
100
µs
1 ms
1
10 ms
100 ms
1 s, 10 s
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
100 s, DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69090
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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