d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. Package limited.
Document Number: 63819
S12-0806-Rev. A, 16-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA10DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
rss
/C
iss
Ratio
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs,
T
J
= 25 °C
I
S
= 10 A
0.8
31
19
14
17
T
C
= 25 °C
30
80
1.2
62
40
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 15 V, V
GS
= 0 V
f = 1 MHz
0.3
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
2425
730
65
0.027
34
15.4
5.8
2.6
20
1.7
10
10
27
10
20
15
25
10
3.4
20
20
50
20
40
30
50
20
ns
0.054
51
23.1
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= + 20, - 16 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 10 V, I
D
= 10 A
25
0.0028
0.0041
52
0.0037
0.0050
1.1
30
17
-5
2.2
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 63819
S12-0806-Rev. A, 16-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA10DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
70
60
I
D
- Drain Current (A)
50
40
30
20
4
10
0
0
0.0
T
C
= - 55
°C
V
GS
= 3 V
I
D
- Drain Current (A)
12
T
C
= 25
°C
V
GS
= 10 V thru 4 V
16
20
8
T
C
= 125
°C
0.0
0.5
1.0
1.5
V
DS
- Drain-to-Source Voltage (V)
2.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
-
Gate-to-Source
Voltage (V)
3.5
Output Characteristics
0.0050
3000
Transfer Characteristics
0.0045
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
0.0040
C - Capacitance (pF)
2400
C
iss
1800
0.0035
V
GS
= 10 V
1200
C
oss
600
0.0030
0.0025
0.0020
0
10
20
30
40
50
60
70
80
I
D
- Drain Current (A)
0
C
rss
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
10
1.6
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 10 A
R
DS(on)
- On-Resistance
(Normalized)
V
DS
= 7.5 V
6
V
DS
= 15 V
4
V
DS
= 24 V
1.4
Capacitance
V
GS
= 10 V
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
7
14
21
28
35
Q
g
- Total
Gate
Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63819
S12-0806-Rev. A, 16-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA10DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.010
0.008
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 150
°C
I
D
= 10 A
0.006
T
J
= 125
°C
0.004
T
J
= 25
°C
0.002
1
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.000
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
2.1
80
On-Resistance vs. Gate-to-Source Voltage
1.9
60
1.7
Power (W)
V
GS(th)
(V)
1.5
I
D
= 250 μA
1.3
40
20
1.1
0.9
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
10
100 μs
1 ms
10 ms
100 ms
1s
10 s
DC
1
0.1
T
A
= 25
°C
BVDSS Limited
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
Safe Operating Area
www.vishay.com
4
For technical support, please contact:
pmostechsupport@vishay.com
Document Number: 63819
S12-0806-Rev. A, 16-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiSA10DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
40
80
30
I
D
- Drain Current (A)
60
Power (W)
Package Limited
25
50
75
100
T
C
- Case Temperature (°C)
125
150
20
40
10
20
0
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
Power, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63819
S12-0806-Rev. A, 16-Apr-12
For technical support, please contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
