VS-ST223C..C Series
www.vishay.com
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
A-PUK (TO-200AB)
• Low thermal impedance
• High speed performance
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
Package
Circuit configuration
I
T(AV)
V
DRM
/V
RRM
V
TM
I
TSM
at 50 Hz
I
TSM
at 60 Hz
I
GT
T
C
/T
hs
A-PUK (TO-200AB)
Single SCR
390 A
400 V, 800 V
1.58 V
5260 A
5510 A
200 mA
55 °C
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Range
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
390
55
745
25
5850
6130
171
156
400 to 800
10 to 30
-40 to +125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
40
VS-ST223C..C
Revision: 13-Sep-17
Document Number: 93672
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST223C..C Series
www.vishay.com
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
I
TM
180° el
180° el
I
TM
100 µs
I
TM
FREQUENCY
UNITS
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
r
Voltage before turn-on V
d
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
930
910
780
490
50
V
DRM
50
40
47/0.22
800
770
650
400
1430
1490
1430
1070
50
V
DRM
-
1220
1300
1260
920
5870
3120
1880
1000
50
V
DRM
-
5240
2740
1640
860
V
A/μs
55
47/0.22
°C
μF
A
55
40
47/0.22
55
40
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I
2
t
for fusing
I
2
t
V
TM
V
T(TO)1
V
T(TO)2
r
t1
r
t2
I
H
I
L
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
390 (150)
55 (85)
745
5850
6130
4920
Sinusoidal half wave,
initial T
J
= T
J
maximum
5150
171
156
121
110
1710
1.58
1.05
1.09
0.88
0.82
600
1000
m
V
kA
2
s
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
I
TM
= 600 A, T
J
= T
J
maximum, t
p
= 10 ms sine wave pulse
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
T
J
= 25 °C, I
T
> 30 A
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
,
I
G
= 1 A
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
T
J
= T
J
maximum, V
DRM
= Rated V
DRM
, I
TM
= 2 x dI/dt
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 μs
Resistive load, gate pulse: 10 V, 5
source
T
J
= T
J
maximum,
I
TM
= 300 A, commutating dI/dt = 20 A/μs
V
R
= 50 V, t
p
= 500 μs, dV/dt: See table in device code
10
VALUES
MIN. MAX.
1000
0.78
μs
30
UNITS
A/μs
Revision: 13-Sep-17
Document Number: 93672
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST223C..C Series
www.vishay.com
Vishay Semiconductors
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum, linear to 80 % V
DRM
,
higher value available on request
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
40
UNITS
V/μs
mA
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage
current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
I
GT
V
GT
I
GD
V
GD
T
J
= 25 °C, V
A
= 12 V, R
a
= 6
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, t
p
5 ms
TEST CONDITIONS
T
J
= T
J
maximum, f = 50 Hz, d% = 50
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
R
thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.17
0.08
0.033
0.017
4900
(500)
50
N
(kg)
g
K/W
UNITS
°C
A-PUK (TO-200AB)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.015
0.019
0.024
0.035
0.060
DOUBLE SIDE
0.017
0.019
0.024
0.035
0.060
RECTANGULAR CONDUCTION
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
DOUBLE SIDE
0.011
0.019
0.026
0.037
0.061
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 13-Sep-17
Document Number: 93672
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST223C..C Series
www.vishay.com
Vishay Semiconductors
1 30
M a x im u m A llo w a b le H e a t sin k T e m p e rat u re (° C )
ST 2 2 3 C ..C S e rie s
(D o ub le Sid e C o o le d )
R
thJ- hs
(D C ) = 0 .0 8 K/ W
130
M a xim u m A llo w a b le H e a tsin k T e m p e r at u re (°C )
120
110
100
90
80
70
60
50
40
30
0
50
100
150
20 0
2 50
3 00
A v e ra g e O n -st a t e C u rre n t (A )
30°
6 0°
90°
1 2 0°
180 °
C o nd uc tio n A ng le
ST 2 2 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
thJ- hs
(D C ) = 0 .1 7 K / W
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
30°
60°
C o ndu ction Pe rio d
90°
1 2 0°
1 8 0°
DC
10 0 2 00 3 00 40 0 50 0 60 0 70 0 8 00
A v e ra g e O n -st a te C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
13 0
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C )
12 0
11 0
10 0
90
80
70
60
50
40
30
20
0
30 °
Maximum Average On -state Power Loss (W )
ST 2 2 3 C ..C S e rie s
(Sin g le S id e C o o le d )
R
t hJ- hs
(D C ) = 0 .1 7 K / W
1000
180°
120°
90°
60°
30°
800
600
RM S Lim it
C o ndu ctio n Pe rio d
400
C o nduc tio n A ng le
60°
90°
1 20°
180 °
DC
50 1 0 0 1 50 20 0 25 0 3 00 3 5 0 40 0 45 0
A v e ra g e O n -s ta t e C u rre n t (A )
200
ST223C..C Series
T
J
= 125°C
0
100
200
300
400
500
0
Average On -state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
1 30
M a xim u m A llo w a b le H e a tsin k T e m p er a tu r e ( °C )
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
10 0
200
3 00
4 00
5 00
A v e ra g e O n -st a t e C u rre n t (A )
30°
60°
90°
120 °
C o nduc tion An gle
Maxim um Average O n-sta te Power Loss (W )
S T 2 2 3 C ..C S e rie s
(D o u b le S id e C o o le d )
R
th J-hs
(D C ) = 0 .0 8 K / W
1400
1200
1000
800
600
400
200
0
0
100 200 300 400 500 600 700 800
Average O n-state Curren t (A)
C o nd uc tio n Pe rio d
DC
180°
120°
90°
60°
30°
RMS Limit
1 8 0°
ST223C..C Series
T
J
= 125°C
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 13-Sep-17
Document Number: 93672
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST223C..C Series
www.vishay.com
Vishay Semiconductors
1
Tr a n sie n t Th e rm a l Im p e d a n c e Z
thJ-hs
(K/ W )
ST 2 2 3 C ..C S e rie s
5500
Peak Half Sine W ave On -state Current ( A)
5000
4500
4000
3500
3000
At Any Rated Load Condition An d W ith
Rated V
RRM
Applied Followin g Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
0 .1
0 .0 1
ST223C..C Series
2500
1
10
1 00
N um b e r O f E qu al A m plitud e Half Cy c le C urre nt Pulse s (N )
S t e a d y S ta t e V a lu e
R
thJ-h s
= 0 .1 7 K/ W
(S in g le Sid e C o o le d )
R
thJ-hs
= 0 .0 8 K/ W
(D o u b le S id e C o o le d )
(D C O p e ra tio n )
0 .0 1
0 .1
1
10
0 .0 0 1
0 .0 0 1
S q ua re W a v e P u lse D u rat io n (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
6000
P e a k H a lf Sin e W a v e O n -st at e C u rre n t (A )
M a x im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µC )
M a x im u m N o n R e p e t it iv e S urg e C u rre n t
V e rsu s P u lse T ra in D ura t io n . C o n t ro l
5500
O f C o n d u c t io n M a y N o t Be M a in ta in e d .
In it ia l T
J
= 1 2 5° C
5000
N o V o lta g e R e a p p lie d
R a te d V
RRM
R e a p p lie d
4500
4000
3500
3000
2500
S T2 2 3 C ..C S e r ie s
2 50
S T 2 2 3 C ..C S e rie s
T
J
= 1 2 5 °C
I
TM
= 5 00 A
30 0 A
20 0 A
2 00
1 50
1 00 A
1 00
50 A
50
2000
0.01
0
0
20
40
60
80
1 00
R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / µ s)
0.1
P u lse T ra in D u ra tio n (s)
1
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10000
M a xim u m R e v e rse R e c o v e ry C u rr e n t - Irr (A )
In st anta neous On-state Current (A)
16 0
I
T M
= 50 0 A
14 0
12 0
10 0
80
60
40
20
0
0
20
30 0 A
20 0 A
10 0 A
50 A
1000
T = 25°C
J
T
J
= 125°C
ST223C..C Series
100
0
2
4
6
8
10
In sta ntaneous O n-state Voltage (V )
ST 2 2 3 C ..C S e rie s
T
J
= 1 2 5 °C
40
60
80
10 0
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s)
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
Revision: 13-Sep-17
Document Number: 93672
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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