MWI 451-17 E9
IGBT Modules
Sixpack
Preliminary data
15
28
16
17
11/12
29
13
14
1
18
19
3
2
20
21
22
9/10
23
24
4
25
26
27
7/8
6
I
C60
= 475 A
= 1700 V
V
CES
V
CE(sat) typ
= 2.25 V
E72873
5
See outline drawing for pin arrangement
Symbol
V
CES
V
GES
I
C25
I
C60
I
C80
RBSOA
t
SC
(SCSOA)
P
tot
Symbol
Conditions
T
VJ
= 25°C to 125°C
Maximum Ratings
1700
V
T
C
= 25°C
T
C
= 60°C
T
C
= 80°C
R
G
= 3.3
Ω;
T
VJ
= 125°C
Clamped inductive load; L = 100 µH
-o
580
475
405
±
20
s
2.25
2.65
5
9
100
90
470
400
90
90
33
2.6
V
CE
= 1200 V; V
GE
=
±
15 V; R
G
= 3.3
Ω;
T
VJ
= 125°C; non-repetitive; V
CEmax
< V
CES
e
I
CM
= 750
V
CEK
≤
V
CES
10
2.2
u
V
A
A
A
A
µs
kW
2.65
3.0
7
V
V
V
1 mA
26 mA
1.5 µA
ns
ns
ns
ns
mJ
mJ
nF
µC
0.057 K/W
h
Conditions
a
T
C
= 25°C
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 30 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
p
V
CE(sat)
I
C
= 450 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
Inductive load, T
VJ
= 125°C
V
CE
= 900 V; I
C
= 450 A
V
GE
= ±15 V; R
G
= 3.3
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 900 V; V
GE
= 15 V; I
C
= 300 A
IXYS reserves the right to change limits, test conditions and dimensions.
t
IGBTs
Features
-
NPT
3
IGBT technology
-
low saturation voltage
-
low switching losses
-
square RBSOA, no latch up
-
high short circuit capability
-
positive temperature coefficient
for easy parallelling
-
MOS input, voltage controlled
-
ultra fast free wheeling diodes
-
solderable pins for PCB mounting
-
package with copper base plate
Advantages
-
space savings
-
reduced protection circuits
-
package designed for wave soldering
Typical Applications
-
AC motor control
-
AC servo and robot drives
-
power supplies
Recommended replacement:
MWI 450-17T9
20070912a
© 2007 IXYS All rights reserved
1-4
MWI 451-17 E9
Diodes
Symbol
I
F80
I
FRM
I
2
t
Symbol
V
F
I
RM
R
thJC
Conditions
T
C
= 80°C
t
p
= 1 ms
T
VJ
= 125°C; t = 10 ms; V
R
= 0 V
Conditions
I
F
= 450 A; V
GE
= 0 V; T
VJ
= 25°C
I
F
= 450 A; di
F
/dt = 3500 A/µs;
T
VJ
= 125°C; V
R
= 1200 V
400
0.075
Maximum Ratings
450
900
35000
A
A
A
2
s
Characteristic Values
min.
typ. max.
2.2
V
A
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Module
Symbol
T
VJ
T
JM
T
stg
V
ISOL
M
d
Conditions
operating
s
a
12.7
10
e
Maximum Ratings
-40...+125
+150
-40...+125
3400
3-6
3-6
°C
°C
°C
V~
Nm
Nm
Mounting torque (M5)
Terminal connection torque (M6)
Conditions
Symbol
R
term-chip
*
)
d
S
d
A
R
thCH
Weight
p
h
I
ISOL
≤
1 mA; 50/60 Hz
Characteristic Values
min.
typ. max.
0.55
mΩ
mm
mm
0.01
900
K/W
g
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
*
)
V = V
CE(sat)
+ 2x R
term-chip
· I
C
resp. V = V
F
+ 2x R
term-chip
· I
F
IXYS reserves the right to change limits, test conditions and dimensions.
-o
4.75
5.0
3375
u
5.25
kΩ
K
Characteristic Values
min.
typ. max.
t
20070912a
© 2007 IXYS All rights reserved
2-4
MWI 451-17 E9
Dimensions in mm (1 mm = 0.0394")
p
h
IXYS reserves the right to change limits, test conditions and dimensions.
a
=
tolerance for all dimensions:
s
e
-o
u
t
20070912a
© 2007 IXYS All rights reserved
3-4
MWI 451-17 E9
800
A
C
800
A
T
J
= 25°C
T
J
= 125°C
V
GE
= 17 V
15 V
13V
600
I
C
600
400
T
J
= 125°C
400
11 V
200
200
9V
0
0
1
2
V
CE
0
3
V
4
0
1
2
V
CE
3
V
4
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
p
h
a
s
e
-o
u
t
20070912a
© 2007 IXYS All rights reserved
4-4
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