STW3N170, STWA3N170
N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™
Power MOSFETs in TO-247 and TO-247 long leads packages
Datasheet - production data
Features
Order code
STW3N170
V
DS
1700 V
R
DS(on)
max.
13 Ω
I
D
2.6 A
P
TOT
160 W
STWA3N170
Intrinsic capacitances and Q
g
minimized
High speed switching
100% avalanche tested
Applications
Figure 1: Internal schematic diagram
Switching applications
Description
This Power MOSFET is designed using the
STMicroelectronics consolidated strip-layout-
based MESH OVERLAY™ process. The result is
a product that matches or improves on the
performance of comparable standard parts from
other manufacturers.
Table 1: Device summary
Order code
STW3N170
STWA3N170
Marking
3N170
Package
TO-247
TO-247 long leads
Packing
Tube
September 2015
DocID028045 Rev 1
1/14
www.st.com
This is information on a product in full production.
Contents
STW3N170, STWA3N170
Contents
1
2
3
4
Electrical ratings ............................................................................. 3
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
Test circuits ..................................................................................... 8
Package information ....................................................................... 9
4.1
4.2
TO-247 package information ............................................................. 9
TO-247 long leads package information ......................................... 11
5
Revision history ............................................................................ 13
2/14
DocID028045 Rev 1
STW3N170, STWA3N170
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
I
DM
(1)
P
TOT
I
AR
E
AS
(2)
T
stg
T
j
Notes:
(1)
(2)
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
Total dissipation at T
case
= 25 °C
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Storage temperature
Operating junction temperature
Value
1700
±30
2.6
1.6
10.4
160
0.8
2
-55 to 150
Unit
V
V
A
A
W
A
mJ
°C
Pulse width limited by T
jmax
.
starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Table 3: Thermal data
Symbol
R
thj-case
R
thj-amb
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
0.78
50
Unit
°C/W
DocID028045 Rev 1
3/14
Electrical characteristics
STW3N170, STWA3N170
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4: Static
Symbol
V
(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V,
V
DS
= 1700 V
V
GS
= 0 V,
V
DS
= 1700 V,
T
case
= 125 °C
V
DS
= 0 V,
V
GS
= ±30 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 1.3 A
3
4
7
Min.
1700
10
µA
500
Typ.
Max.
Unit
V
I
DSS
Zero gate voltage drain
current
I
GSS
V
GS(th)
R
DS(on)
Gate-body leakage
current
Gate threshold voltage
Static drain-source on-
resistance
±100
5
13
nA
V
Ω
Table 5: Dynamic
Symbol
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V,
f = 1 MHz, V
GS
= 0 V
Test conditions
Min.
-
-
-
f = 1 MHz, I
D
= 0 A
V
DD
= 1360 V,
I
D
= 2.6 A, V
GS
= 10 V
(see
Figure 15: "Test
circuit for gate charge
behavior")
Table 6: Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 850 V,
I
D
= 1.3 A R
G
= 4.7 Ω,
V
GS
= 10 V (see
Figure 14: "Test circuit
for resistive load
switching times"
and
Figure 19: "Switching
time waveform")
Min.
-
-
-
-
Typ.
25
9
51
53
Max.
-
-
-
-
ns
Unit
-
-
-
-
Typ.
1100
50
7
3.6
44
7
25
Max.
-
-
-
-
-
-
-
nC
Ω
pF
Unit
4/14
DocID028045 Rev 1
STW3N170, STWA3N170
Table 7: Source-drain diode
Symbol
I
SD
I
SDM
V
SD
(1)
t
rr
Q
rr
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Test conditions
T
j
= 25 °C
T
j
= 25 °C
V
GS
= 0 V,
I
SD
= 2.6 A
I
SD
= 2.6 A,
di/dt = 100 A/µs,
V
DD
= 60 V (see
Figure 16: "Test
circuit for inductive
load switching and
diode recovery
times")
I
SD
= 2.6 A,
di/dt = 100 A/µs,
V
DD
= 60 V,
T
j
= 150 °C (see
Figure 16: "Test
circuit for inductive
load switching and
diode recovery
times")
Min.
-
-
-
-
-
Electrical characteristics
Typ.
Max.
2.6
10.4
1.5
1.58
6
Unit
A
A
V
µs
µC
I
RRM
Reverse recovery current
-
7.9
A
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
-
-
2.12
8.8
µs
µC
I
RRM
Reverse recovery current
-
8.3
A
Notes:
(1)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028045 Rev 1
5/14
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