MJE3439G
NPN Silicon High-Voltage
Power Transistor
This device is designed for use in line−operated equipment
requiring high f
T
.
Features
http://onsemi.com
•
•
•
•
High DC Current Gain
High Current−Gain − Bandwidth Product
Low Output Capacitance
These Devices are Pb−Free and are RoHS Compliant*
0.3 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 15 WATTS
Unit
Vdc
Vdc
Vdc
Adc
mAdc
W
mW/_C
_C
TO−225
CASE 77−09
STYLE 1
1 2
3
1
EMITTER
3
BASE
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
P
D
15
0.12
T
J
, T
stg
–65 to +150
Value
350
450
5.0
0.3
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
q
JC
Max
8.33
Unit
_C/W
MARKING DIAGRAM
YWW
E3439G
Y
WW
E3439
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJE3439G
Package
TO−225
(Pb−Free)
Shipping
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 13
Publication Order Number:
MJE3439/D
MJE3439G
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 5.0 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 300 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 450 Vdc, V
EB(off)
= 1.5 Vdc)
Collector Cutoff Current
(V
CB
= 350 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 20 mAdc, V
CE
= 10 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 4.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 50 mAdc, I
B
= 4.0 mAdc)
Base−Emitter On Voltage
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
f
T
15
C
ob
−
h
fe
25
−
10
−
−
pF
MHz
h
FE
30
15
V
CE(sat)
−
V
BE(sat)
−
V
BE(on)
−
0.8
1.3
Vdc
0.5
Vdc
−
200
Vdc
−
V
CEO(sus)
350
I
CEO
−
I
CEX
−
I
CBO
−
I
EBO
−
20
20
mAdc
500
mAdc
20
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2
MJE3439G
16
PD, POWER DISSIPATION (WATTS)
14
12
10
8.0
6.0
4.0
2.0
0
0
20
40
80
120
60
100
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 1. Power−Temperature Derating Curve
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.007
0.005
0.003
0.002
0.001
1.0
MJE3439
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200 300 500 1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Active−Region Safe Operating Area
The Safe Operating Area Curves indicate I
C
− V
CE
limits below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum T
J
, power−temperature derating must be observed for both steady state and pulse power
conditions.
http://onsemi.com
3
MJE3439G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AC
4
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
MJE3439/D
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
