MOSFET AUTO HEXFET SO-8
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | MOSFET |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SO-8 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 13 A |
Rds On - Drain-Source Resistance | 18 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 52 nC |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 2.5 W |
高度 Height | 1.75 mm |
长度 Length | 4.9 mm |
Transistor Type | 1 N-Channel |
宽度 Width | 3.9 mm |
单位重量 Unit Weight | 0.019048 oz |
IRF7413QTRPBF | IRF7413QPBF | |
---|---|---|
描述 | MOSFET AUTO HEXFET SO-8 | MOSFET AUTO HEXFET SO-8 |
Product Attribute | Attribute Value | Attribute Value |
制造商 Manufacturer |
Infineon(英飞凌) | Infineon(英飞凌) |
产品种类 Product Category |
MOSFET | MOSFET |
技术 Technology |
Si | Si |
安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
封装 / 箱体 Package / Case |
SO-8 | SO-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | 30 V |
Id - Continuous Drain Current | 13 A | 13 A |
Rds On - Drain-Source Resistance | 18 mOhms | 18 mOhms |
Vgs - Gate-Source Voltage | 20 V | 20 V |
Qg - Gate Charge | 52 nC | 52 nC |
Configuration | Single | Single |
Pd-功率耗散 Pd - Power Dissipation |
2.5 W | 2.5 W |
高度 Height |
1.75 mm | 1.75 mm |
长度 Length |
4.9 mm | 4.9 mm |
Transistor Type | 1 N-Channel | 1 N-Channel |
宽度 Width |
3.9 mm | 3.9 mm |
单位重量 Unit Weight |
0.019048 oz | 0.019048 oz |
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