SILICON
MICROSTRUCTURES
INCORPORATED
•
•
SM5112
Harsh Environment Absolute
Silicon Pressure Die
OEM ABSOLUTE SILICON PRESSURE SENSOR DIE FOR HARSH
ENVIRONMENTS
REAR ENTRY FOR PROTECTION OF THE PIEZORESISTIVE BRIDGE
NETWORK – ONLY SILICON AND GLASS EXPOSED
DESCRIPTION
The SM5112 is a silicon micro-machined,
piezoresistive pressure-sensing chip. The
SM5112 is designed for harsh environments
where absolute pressure needs to be
accurately measured. These devices are
available in full-scale ranges from 15 to 300
psi and are ideal for OEM and high volume
applications.
Provided in die form, these sensors can be
mounted on ceramic or PC board substrates
as part of an OEM system. They also may
be packaged into proprietary, or application
specific sensor lines.
Die are probed, inked and diced, and
shipped on tape.
Custom pressure ranges available in high-
volume applications.
FEATURES
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•
•
•
•
High Volume, Low Cost
Absolute Version
Constant Current or Constant Voltage
Drive
Millivolt Output
15, 30, 60, 150 and 300 PSI Ranges
Available
APPLICATIONS
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•
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Altimeters
Tire Gauges
Medical Instrumentation
Industrial Sensors
Diving Modules
Home Appliances
Rev 1.1 10_04
2003
Silicon Microstructures, Inc.
♦
1701 McCarthy Blvd.
♦
Milpitas, CA 95035 USA
Tel: 408-577-0100
♦
Fax: 408-577-0123
♦
sales@ si-micro.com
♦
www.si-micro.com
SM5112
CHARACTERISTICS FOR SM5112 -
SPECIFICATIONS
All parameters are measured at 5.000V supply at room temperature, unless otherwise specified.
Min
Excitation Voltage
Excitation Current
Span (FS Range)
15 psi
30 psi
60 psi
150 psi
300 psi
Offset
TC Span
TC Offset
TC Resistance
Linearity
Bridge Impedance
Proof Pressure
Burst Pressure
Operating Temperature
Storage Temperature
0
0
75
85
85
100
100
-50
-24
-15
17
-0.3
4.0
3X
5X
-40
-55
Typ
5
1.5
125
125
125
145
145
0
-19
2
26
5.0
Max
10
3
150
150
150
195
195
50
-15.5
+15
31
0.3
6.0
Units
V
mA
mV
mV
mV
mV
mV
mV
%FS/100
o
C
%FS/100
o
C
%/100
o
C
%FS
kohm
Rated FS
Rated FS
o
C
o
C
Notes
1
2
3
4
125
150
Notes:
1.
Bridge may be driven with positive or negative voltage
as long as Vsub is not connected. Positive output for positive pressure
applied to bottom side of die when bridge is driven with positive voltage.
2.
Measured at 5V constant voltage excitation.
3.
Measured from 0 to 70 C
4.
Defined as best straight line.
Pin
1
2
3
4
5
6
7
Function
Subs
N/C
Vext+
Sig+
Gnd
Sig-
N/C
Pin-out from Left to
Right in accompanying
figure.
Cross-section of SM5112
Back port hole is 0.8 mm. Silicon is 0.4
mm; top and bottom glass is 0.5 mm
Top view of SM5112 die
(2 mm square as sawn)
ORDERING INFORMATION:
Covered under USA Mask-Copyright and may be covered
under US Patent Numbers 5,812,047 and 6,089,099
Pressure Ranges
PSI
5112
15
015
30
030
60
060
150
150
300
300
Custom ranges available in high volumes
Notice:
Silicon Microstructures, Inc. reserves the right to make changes to the product contained in this publication. Silicon Microstructures, Inc. assumes no responsibility for the use of any
circuits described herein, conveys no license under any patent or other right, and makes no representation that the circuits are free of patent infringement. While the information in this
publication has been checked, no responsibility, however, is assumed for inaccuracies.
Silicon Microstructures, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to
cause failure of a life-support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications.
Rev 1.1 10_04
2003
Silicon Microstructures, Inc.
♦
1701 McCarthy Blvd.
♦
Milpitas, CA 95035 USA
Tel: 408-577-0100
♦
Fax: 408-577-0123
♦
sales@ si-micro.com
♦
www.si-micro.com
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