Power Module
1700V 450A IGBT Module
MG17450WB-BN4MM
Features
• IGBT
3
CHIP(1700V
Trench+Field Stop
technology)
• Low turn-off losses, short
tail current
• V
CE(sat)
with positive
temperature coefficient
• DIODE CHIP(1700V
EMCON 3 technology)
• Free wheeling diodes
with fast and soft reverse
recovery
RoHS
Applications
• AC motor control
• Motion/servo control
• Photovoltaic/Fuel cell
• Inverter and power
supplies
Module Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
T
J max
T
J op
T
stg
V
isol
CTI
Torque
Torque
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
Recommended (M5)
Recommended (M6)
AC, t=1min
250
2.5
3
350
5
5
N·m
N·m
g
-40
-40
3500
Test Conditions
Min
Typ
Max
150
125
125
Unit
°C
°C
°C
V
Absolute Maximum Ratings
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
It
2
Parameters
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Test Conditions
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
Values
1700
±20
600
450
900
2250
Unit
V
V
A
A
A
W
V
A
A
A
A
2
s
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=125°C, t=10ms, V
R
=0V
1700
450
350
900
20000
MG17450WB-BN4MM
1
319
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1700V 450A IGBT Module
Electrical and Thermal Specifications
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
SC
R
thJC
Diode
V
F
I
RRM
Q
rr
E
rec
R
thJCD
Forward Voltage
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
I
F
=450A, V
GE
=0V, T
J
=25°C
I
F
=450A, V
GE
=0V, T
J
=125°C
I
F
=450A, V
R
=900V
di
F
/dt=-4500A/µs
T
J
=125°C
1.8
1.9
570
195
110
0.10
2.2
V
V
A
μC
mJ
K/W
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
V
CC
=900V
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
Short Circuit Current
I
C
=450A
R
G
=3.3Ω
V
GE
=±15V
Inductive Load
V
CE
=900V, I
C
=450A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
t
psc
≤10μS , V
GE
=15V; T
J
=125°C , V
CC
=1000V
V
CE
=V
GE
, I
C
=18mA
I
C
=450A, V
GE
=15V, T
J
=25°C
I
C
=450A, V
GE
=15V, T
J
=125°C
V
CE
=1700V, V
GE
=0V, T
J
=25°C
V
CE
=1700V, V
GE
=0V, T
J
=125°C
V
CE
=0V, V
GE
=±15V, T
J
=125°C
-400
1.7
5.1
40.5
1.3
280
300
80
100
810
1000
180
300
96.5
140
96
140
1800
0.055
5.0
5.8
2.0
2.4
3
20
400
6.4
2.45
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
Parameters
Test Conditions
Min
Typ
Max
Unit
Junction-to-Case Thermal Resistance (Per IGBT)
Junction-to-Case Thermal Resistance (Per Diode)
NTC Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
R
25
B
25/50
Parameters
Resistance
Test Conditions
T
c
=25°C
Min
Typ
5
3375
Max
Unit
KΩ
K
MG17450WB-BN4MM
2
320
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1700V 450A IGBT Module
Figure 1: Typical Output Characteristics
for IGBT Inverter
900
V
GE
=15V
Figure 2: Typical Output Characteristics
for IGBT Inverter
900
750
750
600
I
C
(A)
T
j
=25°C
I
C
(A)
600
450
300
150
T
j
=125°C
450
300
150
0
0
1.0
2.0
V
CE
V
3.0
4.0
T
j
=125°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
V
Figure 3: Typical Transfer Characteristics
for IGBT Inverter
900
750
600
I
C
(A)
450
300
150
0
T
j
=125°C
V
CE
=20V
Figure 4: Switching Energy vs. Gate Resistor
for IGBT Inverter
800
T
j
=25°C
600
V
CE
=900V
I
C
=450A
V
GE
=±15V
T
j
=125°C
E
on
E
on
E
off
(mJ)
400
200
E
off
5
6
7
8
V
GE
9
V
10
11
12
13
0
0
5
10
15
R
G
Ω
20
25
30
Figure 5: Switching Energy vs. Collector Current
for IGBT Inverter
450
400
Figure 6: Reverse Biased Safe Operating Area
for IGBT Inverter
1050
900
V
CE
=900V
R
G
=3.3
Ω
V
GE
=±15V
T
j
=125°C
E
on
E
off
(mJ)
300
E
off
750
600
200
E
on
I
C
(A)
450
300
150
R
G
=3.3Ω
V
GE
=±15V
T
j
=125°C
100
0
0
150
300
450
I
C
A
600
750
900
0
0
200
600
1000
V
CE
V
1400
1800
MG17450WB-BN4MM
321
3
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1700V 450A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
900
750
600
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
130
120
100
I
F
=450
A
V
CE
=900V
T
j
=125°C
E
rec
(mJ)
T
j
=125°C
T
j
=25°C
0.5
1.0
1.5
V
F
V
2.0
2.5
3.0
I
F
(A)
450
300
150
0
0
80
60
40
20
0
5
10
15
R
G
Ω
20
25
30
Figure 9: Transient Thermal Impedance of
Diode and IGBT Inverter
1
Figure 10: NTC Characteristics
100000
Z
thJC
(K/W)
0.1
Diode
10000
IGBT
R
1000
0.01
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
100
0
20
40
80 100 120 140 160
60
T
C
°C
Circuit Diagram
MG17450WB-BN4MM
4
322
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
Power Module
1700V 450A IGBT Module
Dimensions-Package WB
The foot pins are in gold / nickel coating
Packing Options
Part Number
MG17450WB-BN4MM
Marking
MG17450WB-BN4MM
Weight
350g
Packing Mode
Bulk Pack
M.O.Q
20
Part Numbering System
Part Marking System
MG17450 WB - B N4 MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
17: 1700V
CURRENT RATING
450: 450A
ASSEMBLY SITE
WAFER TYPE
CIRCUIT TYPE
PACKAGE TYPE
MG17450WB-BN4MM
LOT NUMBER
Space
reserved
for QR
code
MG17450WB-BN4MM
5
323
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
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