74ACT174
HEX D-TYPE FLIP FLOP WITH CLEAR
s
s
s
s
s
s
s
s
s
HIGH SPEED:
f
MAX
= 200MHz (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 4µA(MAX.) at T
A
=25°C
COMPATIBLE WITH TTL OUTPUTS
V
IH
= 2V (MIN.), V
IL
= 0.8V (MAX.)
50Ω TRANSMISSION LINE DRIVING
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 174
IMPROVED LATCH-UP IMMUNITY
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
74ACT174B
74ACT174M
DESCRIPTION
The 74ACT174 is an advanced high-speed CMOS
HEX D-TYPE FLIP FLOP WITH CLEAR
fabricated with sub-micron silicon gate and
double-layer metal wiring C
2
MOS tecnology.
Information signals applied to D inputs are
transferred to the Q output on the positive going
edge of the clock pulse.
PIN CONNECTION AND IEC LOGIC SYMBOLS
O
so
b
te
le
r
P
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od
s)
t(
bs
-O
When the CLEAR input is held low, the Q outputs
are held low independentely of the other inputs.
The device is designed to interface directly High
Speed CMOS systems with TTL, NMOS and
CMOS output voltage levels.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
et
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T&R
74ACT174MTR
74ACT174TTR
April 2001
1/11
74ACT174
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1
2, 5, 7, 10,
12, 15
3, 4, 6, 11,
13, 14
9
8
16
SYMBOL
CLEAR
Q0 to Q5
D0 to D5
CLOCK
GND
V
CC
NAME AND FUNCTION
Asynchronous Master
Reset (Active LOW)
Flip-Flop Outputs
Data Inputs
Clock Input (LOW-to-HIGH,
Edge Trigger)
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
INPUTS
CLEAR
L
H
H
H
X : Don’t Care
OUTPUT
CLOCK
X
Q
L
L
H
D
X
L
H
X
LOGIC DIAGRAM
O
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b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
Q
n
od
r
s)
t(
uc
FUNCTION
CLEAR
NO CHANGE
This logic diagram has not to be used to estimate propagation delays
2/11
74ACT174
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Parameter
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
50
±
300
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
T
op
dt/dv
Supply Voltage
Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time V
CC
= 4.5 to 5.5V (note 1)
Parameter
Value
4.5 to 5.5
0 to V
CC
0 to V
CC
8
1) V
IN
from 0.8V to 2.0V
O
so
b
te
le
r
P
uc
od
s)
t(
so
b
-O
te
le
r
P
-55 to 125
od
s)
t(
uc
Unit
V
V
V
°C
ns/V
3/11
74ACT174
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
V
OL
Low Level Output
Voltage
4.5
5.5
4.5
5.5
I
I
I
CCT
I
CC
I
OLD
I
OHD
Input Leakage Cur-
rent
Max I
CC
/Input
Quiescent Supply
Current
Dynamic Output
Current (note 1, 2)
5.5
5.5
5.5
5.5
V
O
= 0.1 V or
V
CC
-0.1V
V
O
= 0.1 V or
V
CC
-0.1V
I
O
=-50
µA
I
O
=-50
µA
I
O
=-24 mA
I
O
=-24 mA
I
O
=50
µA
I
O
=50
µA
I
O
=24 mA
I
O
=24 mA
V
I
= V
CC
or GND
V
I
= V
CC
- 2.1V
V
I
= V
CC
or GND
V
OLD
= 1.65 V max
V
OHD
= 3.85 V min
0.6
4
4.4
5.4
3.86
4.86
0.001
0.001
0.1
0.1
0.36
0.36
± 0.1
T
A
= 25°C
Min.
2.0
2.0
Typ.
1.5
1.5
1.5
1.5
4.49
5.49
0.8
0.8
4.4
5.4
3.76
4.76
0.1
0.1
0.44
0.44
Max.
Value
-40 to 85°C
Min.
2.0
2.0
0.8
0.8
4.4
5.4
3.7
4.7
0.1
0.1
V
Max.
-55 to 125°C
Min.
2.0
2.0
0.8
0.8
V
Max.
V
Unit
V
IH
V
IL
V
OH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50Ω
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, R
L
= 500
Ω,
Input t
r
= t
f
= 3ns)
Test Condition
Symbol
Parameter
b
O
t
PLH
t
PHL
Propagation Delay
Time CLOCK to Y
t
PLH
t
PHL
Propagation Delay
Time CLEAR to Y
t
WL
CLEAR Pulse
Width, LOW
t
W
CLOCK Pulse
Width
t
s
Setup Time D to
CLOCK, HIGH or
LOW
t
h
Hold Time D to
CLOCK, HIGH or
LOW
Recovery Time
t
REM
CLEAR to CLOCK
f
MAX
Maximum CLOCK
Frequency
so
te
le
r
P
uc
od
5.0
(*)
5.0
(*)
5.0
(*)
5.0
(*)
5.0
(*)
V
CC
(V)
s)
t(
bs
-O
Min.
1.5
1.5
l
o
te
e
r
P
od
1.5
40
75
-75
±1
s)
t(
uc
0.5
0.5
±1
1.6
80
50
-50
µA
mA
µA
mA
mA
Value
-40 to 85°C
Min.
Max.
11.5
11.0
5.0
5.0
1.5
-55 to 125°C
Min.
Max.
11.5
11.0
5.0
5.0
1.5
ns
ns
ns
ns
ns
Unit
T
A
= 25°C
Typ.
6.0
7.0
3.0
3.0
0.5
Max.
10.5
9.5
4.5
4.5
1.5
5.0
(*)
5.0
(*)
5.0
(*)
165
1.0
0.0
200
2.0
0.5
140
2.0
0.5
140
2.0
0.5
ns
ns
MHz
(*) Voltage range is 5.0V ± 0.5V
4/11
74ACT174
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
5.0
f
IN
= 10MHz
T
A
= 25°C
Min.
Typ.
4
35
Max.
Value
-40 to 85°C
Min.
Max.
-55 to 125°C
Min.
Max.
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance (note
1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/n (per circuit)
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 500Ω or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
5/11
NXP MCU
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