®
1N582x
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
T
j
V
F
(max)
FEATURES AND BENEFITS
n
n
n
n
n
3A
40 V
150°C
0.475 V
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
AVALANCHE CAPABILITY SPECIFIED
DO-201AD
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supplies and high frequency DC to
DC converters. Packaged in DO-201AD these
devices are intended for use in low voltage, high
frequency inverters, free wheeling, polarity
protection and small battery chargers.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward
current
Repetitive peak avalanche
power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
T
L
= 100°C
T
L
= 110°C
tp = 10 ms
Sinusoidal
tp = 1µs
Tj = 25°C
δ
= 0.5
δ
= 0.5
3
3
80
1700
- 65 to + 150
150
10000
Value
1N5820 1N5821 1N5822
20
30
40
10
3
Unit
V
A
A
A
A
W
°C
°C
V/µs
* :
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
−
a
)
1/5
July 2003 - Ed: 3A
1N582x
THERMAL RESISTANCES
Symbol
R
th (j-a)
R
th (j-l)
Junction to ambient
Junction to lead
Parameter
Lead length = 10 mm
Lead length = 10 mm
Value
80
25
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameter
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 25°C
Pulse test : * tp = 380 µs,
δ
< 2%
1N5820 1N5821 1N5822
2
20
2
20
0.5
0.9
2
20
0.525
0.95
Unit
mA
mA
V
V
V
R
= V
RRM
V
F
*
I
F
= 3 A
I
F
= 9.4 A
0.475
0.85
To evaluate the conduction losses use the following equations :
P = 0.33 x I
F(AV)
+ 0.035 I
F2(RMS )
for 1N5820 / 1N5821
P = 0.33 x I
F(AV)
+ 0.060 I
F2(RMS )
for 1N5822
Fig. 1:
Average forward power dissipation versus
average forward current (1N5820/1N5821).
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
IF(av) (A)
2.0
2.5
δ
=tp/T
T
Fig. 2:
Average forward power dissipation versus
average forward current (1N5822).
PF(av)(W)
2.0
1.8
δ
= 0.05
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
1.0
PF(av)(W)
δ
= 0.1
δ
= 0.05
δ
=1
δ
= 0.2
δ
= 0.5
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
=1
T
tp
IF(av) (A)
δ
=tp/T
tp
3.0
3.5
4.0
1.5
2.0
2.5
3.0
3.5
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
P
ARM
(t
p
)
P
ARM
(1µs)
1
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
0
25
50
75
100
125
150
2/5
1N582x
Fig. 5-1:
Average forward current versus ambient
temperature (δ=0.5) (1N5820/1N5821).
IF(av)(A)
3.5
Rth(j-a)=Rth(j-l)=25°C/W
Fig. 5-2:
Average forward current versus ambient
temperature (δ=0.5) (1N5822).
IF(av)(A)
3.5
Rth(j-a)=Rth(j-l)=25°C/W
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
δ
=tp/T
T
Rth(j-a)=80°C/W
3.0
2.5
2.0
1.5
1.0
0.5
T
Rth(j-a)=80°C/W
tp
Tamb(°C)
50
75
100
125
150
0.0
δ
=tp/T
tp
Tamb(°C)
25
0
25
50
75
100
125
150
Fig. 6-1:
Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5820/1N5821).
IM(A)
16
14
12
10
8
6
4
I
M
Fig. 6-2:
Non repetitive surge peak forward
current versus overload duration (maximum
values) (1N5822).
IM(A)
12
11
10
9
8
7
6
5
4
3
I
M
2
1
0
1E-3
Ta=25°C
Ta=25°C
Ta=75°C
Ta=75°C
Ta=100°C
t
Ta=100°C
2
0
1E-3
δ
=0.5
t(s)
1E-2
1E-1
1E+0
t
δ
=0.5
t(s)
1E-2
1E-1
1E+0
Fig. 7:
Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
Zth(j-a)/Rth(j-a)
Fig. 8:
Junction capacitance versus reverse
voltage applied (typical values).
1.0
0.8
0.6
0.4
600
C(pF)
F=1MHz
Tj=25°C
1N5820
1N5821
1N5822
δ
= 0.5
100
δ
= 0.2
T
0.2
δ
= 0.1
Single pulse
tp(s)
1E+0
1E+1
δ
=tp/T
tp
VR(V)
10
1
2
5
10
20
40
0.0
1E-1
1E+2
1E+3
3/5
1N582x
Fig. 9-1:
Reverse leakage current versus reverse
voltage applied (typical values) (1N5820/1N5821).
IR(mA)
1N5821
1N5820
Fig. 9-2:
Reverse leakage current versus reverse
voltage applied (typical values) (1N5822).
IR(mA)
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
5E+1
1E+1
1E+0
1E-1
Tj=25°C
Tj=125°C
Tj=125°C
Tj=100°C
Tj=100°C
1E-2
VR(V)
Tj=25°C
0
5
10
15
20
25
30
1E-3
VR(V)
0
5
10
15
20
25
30
35
40
Fig. 10-1:
Forward voltage drop versus forward
current (typical values) (1N5820/1N5821).
IFM(A)
Fig. 10-2:
Forward voltage drop versus forward
current (typical values) (1N5822).
IFM(A)
50.00
10.00
50.00
10.00
Tj=125°C
Tj=100°C
Tj=125°C
1.00
1.00
Tj=100°C
Tj=25°C
Tj=25°C
0.10
VFM(V)
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.10
VFM(V)
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 11:
Non repetitive surge peak forward current
versus number of cycles.
IFSM(A)
100
F=50Hz
Tj initial=25°C
80
60
40
20
Number of cycles
0
1
10
100
1000
4/5
1N582x
PACKAGE MECHANICAL DATA
DO-201AD plastic
B
A
B
ØC
note 1
E
E
note 1
ØD
ØD
note 2
DIMENSIONS
REF.
A
B
♠
C
♠
D
E
Millimeters
Min.
25.40
5.30
1.30
1.25
Max.
9.50
1.000
0.209
0.051
0.049
2 - The minimum axial length within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
Inches
Min.
Max.
0.374
1 - The lead diameter
♠
D is not controlled over zone E
NOTES
Ordering type
1N582x
1N582xRL
n
Marking
Part number
cathode ring
Part number
cathode ring
Package
DO-201AD
DO-201AD
Weight
1.12g
1.12g
Base qty
600
1900
Delivery mode
Ammopack
Tape & reel
EPOXY MEETS UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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