IS61WV5128EDBLL
IS64WV5128EDBLL
512K x 8 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH ECC
FEATURES
• High-speed access time: 8, 10 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical)
CMOS standby
• Single power supply
— V
dd
2.4V to 3.6V (10 ns)
— V
dd
3.3V ± 10% (8 ns)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial and Automotive temperature support
• Lead-free available
• Error Detection and Error Correction
NOVEMBER 2011
4,194,304-bit static RAMs organized as 524,288 words by
8 bits. It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with inno-
vative circuit design techniques, yields high-performance
and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be re-
duced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of
the memory.
The IS61/64WV5128EDBLL is packaged in the JEDEC
standard 44-pin TSOP-II, 36-pin SOJ and 36-pin Mini BGA
(6mm x 8mm).
DESCRIPTION
The
ISSI
IS61/64WV5128EDBLL is a high-speed,
FUNCTIONAL BLOCK DIAGRAM
A0-A18
Decoder
Memory Array
(512Kx8)
ECC Array
(512Kx4)
8
8
IO0-7
I/O Data
Circuit
8
ECC
12
4
Column I/O
/CE
/OE
/WE
Control
Circuit
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
11/08/2011
1
IS61/64WV5128EDBLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
V
dd
t
stg
P
t
Parameter
Terminal Voltage with Respect to GND
V
dd
Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to V
dd
+ 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
1
2
3
4
5
6
7
8
9
10
11
IS64WV5128EDBLL
V
DD
(10n
S
)
—
2.4V-3.6V
2.4V-3.6V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
in
C
i/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
in
= 0V
V
Out
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
a
= 25°C, f = 1 MHz, V
dd
= 3.3V.
ERROR DETECTION AND ERROR CORRECTION
•
•
•
•
Independent ECC with hamming code for each byte
Detect and correct one bit error per byte
Better reliability than parity code schemes which can only detect an error but not correct an error
Backward Compatible: Drop in replacement to current in industry standard devices (without ECC)
TRUTH TABLE
Mode
CE
Not Selected H
(Power-down)
Output Disabled L
Read
L
Write
L
WE
X
H
H
L
OE
X
H
L
X
I/O Operation V
DD
Current
High-Z
i
sb
1
, i
sb
2
High-Z
d
Out
d
in
i
CC
i
CC
i
CC
OPERATING RANGE (V
DD
)
1
Range
Industrial
Automotive (A1)
Automotive (A3)
Ambient Temperature
–40°C to +85°C
–40°C to +85°C
–40°C to +125°C
IS61WV5128EDBLL
V
DD
(8, 10n
S
)
2.4V-3.6V (10ns)
3.3V ± 10% (8ns)
—
—
12
Note:
1. Contact SRAM@issi.com for 1.8V option
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
11/08/2011
3
IS61/64WV5128EDBLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
V
Oh
V
Ol
V
ih
V
il
i
li
i
lO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
= Min., i
Oh
= –4.0 mA
V
dd
= Min., i
Ol
= 8.0 mA
GND ≤ V
in
≤ V
dd
GND ≤ V
Out
≤ V
dd
, Outputs Disabled
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
il
(min.) = –0.3V DC; V
il
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
ih
(max.) = V
dd
+ 0.3V dC; V
ih
(max.) = V
dd
+ 2.0V aC (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.4V-3.6V
Symbol
V
Oh
V
Ol
V
ih
V
il
i
li
i
lO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
= Min., i
Oh
= –1.0 mA
V
dd
= Min., i
Ol
= 1.0 mA
GND ≤ V
in
≤ V
dd
GND ≤ V
Out
≤ V
dd
, Outputs Disabled
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
il
(min.) = –0.3V DC; V
il
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
ih
(max.) = V
dd
+ 0.3V dC; V
ih
(max.) = V
dd
+ 2.0V aC (pulse width < 10 ns). Not 100% tested.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
i
CC
i
CC
1
i
sb
1
i
sb
2
Parameter
V
dd
Dynamic Operating
Supply Current
Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
dd
= Max.,
i
Out
= 0 mA, f = f
max
V
dd
= Max.,
i
Out
= 0 mA, f = 0
V
dd
= Max.,
V
in
= V
ih
or V
il
CE ≥ V
ih
, f = 0
V
dd
= Max.,
CE ≥ V
dd
– 0.2V,
V
in
≥ V
dd
– 0.2V, or
V
in
≤ 0.2V, f = 0
-8
Min. Max.
— 40
— 45
— —
21
— 20
— 25
— —
—
10
— 15
— —
—
5
—
6
— —
1.5
-10
Min. Max.
— 30
— 35
— 50
21
— 20
— 25
— 40
— 10
— 15
— 30
— 5
— 6
— 15
1.5
-20
Min. Max.
— 25
— 30
— 45
—
—
—
—
—
—
—
—
—
20
25
40
10
15
30
5
6
15
Unit
mA
mA
mA
Com.
Ind.
Auto.
typ.
(2)
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
mA
Note:
1. At f = f
max
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
dd
= 3.0V, T
a
= 25
o
C and not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
11/08/2011
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