STTH3006
Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
Description
The device is developed using ST's Turbo 2
600 V technology. It is well-suited as a boost
diode, especially for use in continuous mode
power factor corrections and hard switching
conditions.
This device is also intended for use as a free
wheeling diode in power supplies and other
power switching applications.
Table 1: Device summary
Symbol
I
F(AV)
Value
30 A
600 V
1.10 V
175 °C
50 ns
Features
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching and conduction losses
Insulated package: DOP3I
Insulating voltage = 2500 V
RMS
sine
V
RRM
V
F
(typ.)
T
j
t
rr
(max)
May 2017
DocID12368 Rev 4
1/12
www.st.com
This is information on a product in full production.
Characteristics
STTH3006
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ = 0.5 square wave
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Table 3: Thermal parameters
Symbol
R
th(j-c)
Junction to case
DOP3I
Parameter
DO-247
Max. value
1.1
°C/W
1.7
Unit
DO-247
DOP3I
T
C
= 115 °C
T
C
= 85 °C
30
300
-65 to +175
175
A
A
°C
°C
Value
600
50
Unit
V
A
t
p
= 10 ms sinusoidal
Table 4: Static electrical characteristics
Symbol
I
R
(1)
V
F
(2)
Notes:
(1)
Pulse
(2)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
-
-
-
-
Typ.
Max.
25
Unit
µA
80
800
1.85
Forward voltage drop
I
F
= 30 A
1.10
1.40
V
test: t
p
= 5 ms, δ < 2%
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 1.07 x I
F(AV)
+ 0.011 x I
F2(RMS)
2/12
DocID12368 Rev 4
STTH3006
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
I
F
= 0.5 A
I
rr
= 0.25 A
I
R
= 1 A
t
rr
Reverse recovery time
T
j
= 25 °C
I
F
= 1 A
V
R
= 30 V
dI
F
/dt = -50 A/µs
Reverse recovery current
Forward recovery time
T
j
= 25 °C
V
FP
Forward recovery voltage
T
j
= 125 °C
I
F
= 30 A
V
R
= 400 V
dI
F
/dt = -100 A/µs
I
F
= 30 A
V
FR
= 1.1 x V
F
max
dI
F
/dt = 100 A/µs
-
Min.
-
Characteristics
Typ.
Max.
50
ns
50
70
Unit
I
RM
t
fr
-
-
-
8
11
500
A
ns
V
2.5
DocID12368 Rev 4
3/12
Characteristics
STTH3006
1.1
Characteristics (curves)
Figure 1: Conduction losses versus average
forward current
P
F( AV )
(W)
55
50
45
40
35
30
25
20
15
10
Figure 2: Forward voltage drop versus forward
current
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
δ=1
T
5
0
I
F( AV )
(
A)
0
5
10
15
20
25
δ
=tp/T
30
tp
35
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
Z
th (j-c)
/R
th(j-c)
1.0
0.9
25
30
Figure 4: Peak reverse recovery current versus
dI
F
/dt (typical values)
I
RM
(A)
V
R
= 400 V
T
j
= 125°C
I
F
=I
F(AV )
I
F
=0.5 x I
F(AV )
I
F
=2 x I
F(AV )
0.8
0.7
0.6
15
20
I
F
=0.25 x I
F(AV )
0.5
0.4
0.3
5
10
0.2
Single pulse
0.1
0.0
1.E -03
1.E -02
1.E -01
1.E +00
dI
F
/dt(A/µs)
t
P
(s)
0
0
50
100
150
200
250
300
350
400
450
500
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values)
t
rr
(ns)
200
V
R
= 400 V
T
j
= 125°C
150
I
F
=2 x I
F(AV )
Figure 6: Reverse recovery charges versus dI
F
/dt
(typical values)
I
F
=I
F(AV )
I
F
=0.5 x I
F(AV )
100
50
dI
F
/dt(A/µs)
0
0
200
400
600
800
1000
4/12
DocID12368 Rev 4
STTH3006
Figure 7: Softness factor versus dI
F
/dt
(typical values)
Sfactor
0.6
Characteristics
Figure 8: Relative variations of dynamic
parameters versus junction temperature
0.5
I
F
≤ 2 x I
F
(AV)
V
R
= 400 V
T
j
= 125°C
0.4
0.3
0.2
0.1
0.0
0
50
100
150
200
dI
F
/dt(A/µs)
250
300
350
400
450
500
Figure 9: Transient peak forward voltage versus
dI
F
/dt (typical values)
Figure 10: Forward recovery time versus dI
F
/dt
(typical values)
V
FP
(V)
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
300
400
500
t
FR
(ns)
800
I
F
≤ 2 x I
F
(AV)
V
R
= 400 V
T
j
= 125°C
I
F
= I
F
(AV)
V
R
= 400 V
T
j
= 125°C
700
600
200
0.0
0
100
200
dI
F
/dt(A/µs)
300
400
500
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
DocID12368 Rev 4
5/12
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
