HMC452QS16G
/
452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
Features
Output IP3: +48 dBm
22.5 dB Gain @ 400 MHz
9 dB Gain @ 2100 MHz
53% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm
2
Functional Diagram
General Description
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged
in a miniature 16 lead QSOP plastic package, the
amplifier gain is typically 22.5 dB at 0.4 GHz and 9
dB at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G & HMC452QS16GE ideal power
amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed
Wireless applications.
Electrical Specifications,
T
A
= +25°C, Vs= +5V, VPD = +5V
[1]
Parameter
Frequency Range
Gain
Gain Variation Over
Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB
Compression (P1dB)
Saturated Output
Power (Psat)
Output Third Order
Intercept (IP3) [2]
Noise Figure
Supply Current (Icq)
Control Current (IPD)
40
27.5
20
Min.
Typ.
400 - 410
22.5
0.012
13
7
30.5
31
43
7
485
10
41
27.5
0.02
19
Max.
Min.
Typ.
450 - 496
21.5
0.012
15
8
30.5
31
44
7
485
10
45
27
0.02
13
Max.
Min.
Typ.
810 - 960
15.5
0.012
9
12
30
31
48
7
485
10
45
28
0.02
7.5
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Units
MHz
dB
0.02
dB/C
dB
dB
dBm
dBm
dBm
dB
mA
mA
1710 - 1990
10
0.012
17
15
31
31.5
48
7
485
10
45
28
0.02
6.5
2010 - 2170
9
0.012
11
20
31
32.5
48
7.5
485
10
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
5 - 252
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G
/
452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 400 MHz
25
20
15
RESPONSE (dB)
Gain vs. Temperature @ 400 MHz
25
24
23
22
21
20
19
18
17
16
15
14
13
12
0.35
5
AMPLIFIERS - SMT
5
0
-5
-10
-15
0.1
S11
S22
GAIN (dB)
10
S21
+25 C
+85 C
-40 C
0.2
0.3
0.4
0.5
0.6
0.7
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
0
-2
RETURN LOSS (dB)
Output Return Loss
vs. Temperature @ 400 MHz
0
-2
RETURN LOSS (dB)
-4
-6
-8
-10
-12
-14
-16
0.35
+25 C
+85 C
-40 C
-4
-6
-8
-10
-12
-14
-16
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
0.45
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature @ 400 MHz
34
33
32
31
P1dB (dBm)
30
29
28
27
26
25
24
0.35
0.37
0.39
0.41
0.43
0.45
+25 C
+85 C
-40 C
Psat vs. Temperature @ 400 MHz
34
33
32
31
Psat (dBm)
30
29
28
27
26
25
24
0.35
0.37
0.39
0.41
0.43
0.45
+25 C
+85 C
-40 C
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 25
HMC452QS16G
/
452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 400 MHz
50
48
46
44
OIP3 (dBm)
42
40
38
36
34
32
30
0.35
0.37
0.39
0.41
0.43
0.45
+25 C
+85 C
-40 C
Noise Figure vs. Temperature @ 400 MHz
10
9
8
NOISE FIGURE (dB)
7
6
5
+25 C
4
3
2
1
0
0.35
0.37
0.39
+85 C
-40 C
0.41
0.43
0.45
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 400 MHz
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
-35
0.35
+25 C
+85 C
-40 C
Gain, Power & IP3
vs. Supply Voltage @ 400 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
50
45
40
35
30
25
20
15
10
4.5
Gain
P1dB
Psat
OIP3
0.37
0.39
0.41
0.43
0.45
4.75
5
Vs (Vdc)
5.25
5.5
FREQUENCY (GHz)
Power Compression @ 400 MHz
55
Pout (dBm), Gain (dB), PAE (%)
50
45
40
35
30
25
20
15
10
5
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout
Gain
PAE
ACPR vs. Supply Voltage @ 400 MHz
W-CDMA , 64 DPCH
-10
-15
-20
-25
ACPR (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
8
10
12
14
16
18
Source ACPR
W-CDMA
Frequency: 400 MHz
Integration BW: 3.84 MHz
64 DPCH
4.5V
5V
5.5V
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
5 - 254
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G
/
452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 470 MHz
25
20
15
RESPONSE (dB)
GAIN (dB)
10
5
0
-5
-10
-15
0.1
S21
S11
S22
Gain vs. Temperature @ 470 MHz
24
23
22
21
20
19
18
17
16
15
14
13
12
0.43
+25 C
+85 C
-40 C
5
AMPLIFIERS - SMT
0.2
0.3
0.4
0.5
0.6
0.7
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 470 MHz
0
-2
-4
RETURN LOSS (dB)
-6
-8
-10
-12
-14
-16
-18
-20
0.43
0.45
0.47
0.49
0.51
0.53
+25 C
+85 C
-40 C
Output Return Loss
vs. Temperature @ 470 MHz
0
-2
RETURN LOSS (dB)
-4
-6
-8
-10
-12
-14
-16
0.43
+25 C
+85 C
-40 C
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature @ 470 MHz
34
33
32
31
P1dB (dBm)
30
29
28
27
26
25
24
0.43
0.45
0.47
0.49
0.51
0.53
+25 C
+85 C
-40 C
Psat vs. Temperature @ 470 MHz
34
33
32
31
Psat (dBm)
30
29
28
27
26
25
24
0.43
0.45
0.47
0.49
0.51
0.53
+25 C
+85 C
-40 C
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 25
HMC452QS16G
/
452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 470 MHz
50
48
46
44
OIP3 (dBm)
42
40
38
36
34
32
30
0.43
0.45
0.47
0.49
0.51
0.53
+25 C
+85 C
-40 C
Noise Figure vs. Temperature @ 470 MHz
10
9
8
NOISE FIGURE (dB)
7
6
5
4
3
2
1
0
0.43
0.45
0.47
0.49
0.51
0.53
+25 C
+85 C
-40 C
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 470 MHz
0
-5
-10
ISOLATION (dB)
-15
-20
-25
-30
-35
-40
0.2
+25 C
+85 C
-40 C
Gain, Power & IP3
vs. Supply Voltage @ 470 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
50
45
40
35
30
25
20
15
10
4.5
Gain
P1dB
Psat
OIP3
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
4.75
5
Vs (Vdc)
5.25
5.5
FREQUENCY (GHz)
Power Compression @ 470 MHz
55
Pout (dBm), Gain (dB), PAE (%)
50
45
40
35
30
25
20
15
10
5
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
Pout
Gain
PAE
ACPR vs. Supply Voltage @ 470 MHz
W-CDMA, 64 DPCH
-10
-15
-20
-25
ACPR (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
8
10
12
14
16
18
Source ACPR
4.5V
5V
5.5V
W-CDMA
Frequency: 470 MHz
Integration BW: 3.84 MHz
64 DPCH
20
22
24
26
28
INPUT POWER (dBm)
Channel Power (dBm)
5 - 256
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
