IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT136X-600E
4Q Triac
30 April 2015
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT186A "full pack" plastic
package intended for use in general purpose bidirectional switching and phase control
applications. This sensitive gate "series E" triac is intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
•
•
•
Direct triggering from low power drivers and logic ICs
High blocking voltage capability
Isolated package
Low holding current for small load currents and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
h
≤ 92 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
-
4
10
mA
-
2.5
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
25
4
Unit
V
A
A
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TO
-2
20F
NXP Semiconductors
BT136X-600E
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
Typ
5
11
2.2
Max
10
25
15
Unit
mA
mA
mA
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT136X-600E
BT136X-600E/DG
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
Type number
BT136X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
30 April 2015
2 / 13
NXP Semiconductors
BT136X-600E
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 92 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
4
25
27
3.1
50
50
10
50
2
5
0.5
150
125
aaa-009556
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; SIN
I
G
= 20 mA; T2+ G+
I
G
= 20 mA; T2+ G-
I
G
= 50 mA; T2- G+
I
G
= 20 mA; T2- G-
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
12
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
aaa-009685
over any 20 ms period
-
-40
-
I
T(RMS)
(A)
10
8
5
I
T(RMS)
(A)
4
3
6
2
4
2
0
10
-2
1
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
h
(°C)
150
f = 50 Hz; T
h
= 92 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of heatsink
temperature; maximum values
BT136X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
30 April 2015
3 / 13
NXP Semiconductors
BT136X-600E
4Q Triac
8
P
tot
(W)
6
aaa-017651
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
81
T
h(max)
(°C)
α
α = 180°
α
120°
90°
60°
30°
92
4
103
2
114
0
0
1
2
3
4
I
T(RMS)
(A)
5
125
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
10
3
003aae829
I
T
I
TSM
(A)
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
(2)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT136X-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
30 April 2015
4 / 13
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