®
BUF420M
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR CONTROL
DESCRIPTION
The BUF420M is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
1
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
850
450
7
30
60
6
9
275
-65 to 200
200
Unit
V
V
V
A
A
A
A
W
o
o
C
C
March 2002
1/8
BUF420M
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case
Max
0.63
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEV
I
EBO
Parameter
Collector Cut-off
Current (R
BE
= 5
Ω)
Collector Cut-off
Current (V
BE
= -1.5V)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 850 V
V
CE
= 850 V
V
CE
= 850 V
V
CE
= 850 V
V
EB
= 5 V
I
C
= 200 mA
L = 25 mH
450
T
C
= 100 C
T
C
= 100 C
o
o
Min.
Typ.
Max.
0.2
1
0.2
1
1
Unit
mA
mA
mA
mA
mA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
Emitter Base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
I
E
= 50 mA
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
10A
10 A
20 A
20 A
10A
10 A
20 A
20 A
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
=
=
=
=
=
=
=
=
1
1
4
4
1
1
4
4
A
A
A
A
A
A
A
A
T
C
=100 C
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
di
c
/dt
Rate of rise on-state
Collector Current
V
CE
(3µs)
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
V
CE
(5µs)
O
bs
t
s
t
f
t
c
t
s
t
f
t
c
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V
CC
= 300 V
I
B1
= 1.5 A
I
B1
= 1.5 A
I
B1
= 6 A
)-
(s
t
R
C
= 0
t
p
= 3
µs
o
T
C
=25 C
T
C
=100
o
C
T
C
=100
o
C
R
C
= 60
Ω
T
C
=25
o
C
T
C
=100
o
C
R
C
= 60
Ω
T
C
=25
o
C
T
C
=100
o
C
V
CC
= 50 V
R
BB
= 0.6
Ω
I
B1
= 1 A
V
CC
= 50 V
R
BB
= 0.6
Ω
I
B1
= 1 A
T
C
=100
o
C
V
CC
= 50 V
R
BB
= 0.6
Ω
L = 0.25 mH
V
CC
= 50 V
R
BB
= 0.15
Ω
I
B1
= 1 A
b
O
so
T
C
=100
o
C
T
C
=100 C
o
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le
o
ro
P
7
uc
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V
V
V
V
V
V
V
V
V
0.8
2.8
0.5
0.9
1.5
1.1
1.5
T
C
=100
o
C
100
70
150
2.1
A/µs
A/µs
A/µs
V
V
V
V
µs
µs
µs
2
0.1
0.18
µs
µs
µs
V
V
CC
= 300 V
I
B1
= 1.5 A
I
B1
= 1.5 A
V
CC
= 300 V
I
B1
= 1.5 A
I
B1
= 1.5 A
I
C
= 10 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 0.25 mH
I
C
= 10 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 0.25 mH
I
C
= 10 A
V
BB
= - 5 V
I
B1
= 1 A
T
C
=125
o
C
I
C
= 10 A
V
BB
= 0
V
clamp
= 400 V
L = 0.25 mH
8
1.1
4
1
0.05
0.08
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
Maximum Collector
Emitter Voltage
without Snubber
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
V
CEW
500
t
s
t
f
t
c
1.5
0.04
0.07
µs
µs
µs
2/8
BUF420M
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Forward Biased Safe Operating Area
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Reverse Biased Safe Operating Area
4/8
BUF420M
Storage Time Versus Pulse Time.
Figure 1:
Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
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