STPS2L25
Low drop power Schottky rectifier
Main product characteristics
A
I
F(AV)
V
RRM
T
j
(max)
V
F
(max)
2A
25 V
150° C
0.375 V
K
SMB
STPS2L25U
Features and benefits
■
■
Very low forward voltage drop for less power
dissipation
Optimized conduction/reverse losses trade-off
which means the highest efficiency in the
applications
Avalanche capability specified
A
■
K
SMB flat
STPS2L25UF
Description
Single Schottky rectifier suited to switched mode
power supplies and high frequency DC to DC
converters.
Packaged in SMB, SMB flat for thermal resistance
characteristic improvement, this device is
especially intended for use in parallel with
MOSFETs in synchronous rectification.
Table 1.
Symbol
V
RRM
I
F(AV)
I
FSM
P
ARM
T
stg
T
j
1.
dPtot
---------------
dTj
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
Average forward current
SMB
SMB flat
T
L
= 125° C
δ
= 0.5
T
L
= 135° C
δ
= 0.5
t
p
= 10 ms sinusoidal
t
p
= 1 µs Tj = 25° C
Value
25
2
75
1500
-65 to + 150
150
Unit
V
A
A
W
°C
°C
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Operating junction
temperature
(1)
1
<
--------------------------
condition to avoid thermal runaway for a diode on its own heatsink
Rth
(
j
–
a
)
February 2007
Rev 5
1/9
www.st.com
9
Characteristics
STPS2L25
1
Table 2.
Symbol
R
th(j-l)
Characteristics
Thermal resistance
Parameter
SMB
Junction to lead
SMB flat
15
Value
25
°C/W
Unit
Table 3.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test Conditions
T
j
= 25° C
T
j
= 125° C
T
j
= 25° C
Min.
Typ.
Max.
90
Unit
µA
mA
V
R
= V
RRM
15
30
0.45
V
F(1)
Forward voltage drop
T
j
= 125° C
T
j
= 25° C
T
j
= 125° C
I
F
= 2 A
0.325
0.375
V
0.53
I
F
= 4 A
0.43
0.51
1. Pulse test: tp = 380 µs,
δ
< 2%
To evaluate the maximum conduction losses, use the following equation:
P = 0.24 x I
F(AV)
+ 0.068 I
F2(RMS)
2/9
STPS2L25
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
I
F(AV)
(A)
2.2
Average forward current versus
ambient temperature (δ = 0.5) SMB
P
F(AV)
(W)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.0
0.8
0.6
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
R
th(j-a)
=R
th(j-l)
SMB
2.0
1.8
1.6
R
th(j-a)
=100°C/W
δ
=1
1.4
1.2
T
0.4
T
I
F(AV)
(A)
δ
=tp/T
2.0
2.2
0.2
tp
0.0
2.4
2.6
0
δ
=tp/T
25
tp
50
T
amb
(°C)
75
100
125
150
Figure 3.
Average forward current
versus ambient temperature
(δ = 0.5) SMB flat
Figure 4.
Non repetitive surge peak forward
current versus overload duration
(maximum values) SMB
I
F(AV)
(A)
2.2
R
th(j-a)
=R
th(j-l)
I
M
(A)
10
SMB
2.0
1.8
1.6
R
th(j-a)
=100°C/W
SMB flat
9
8
7
6
T
a
=25°C
1.4
1.2
5
1.0
0.8
0.6
0.4
0.2
0.0
0
4
3
T
a
=75°C
T
T
a
=125°C
2
I
M
t
δ
=tp/T
25
tp
50
T
amb
(°C)
75
100
125
150
1
0
1.E-03
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
Figure 5.
Non repetitive surge peak forward
current versus overload duration
(maximum values) SMB flat
Figure 6.
Normalized avalanche power
derating versus pulse duration
I
M
(A)
30
SMB flat
P
ARM
(t
p
)
P
ARM
(1µs)
1
25
20
0.1
T
L
=25°C
15
T
L
=75°C
10
T
L
=125°C
0.01
I
M
t
5
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
0
1.E-03
3/9
Characteristics
STPS2L25
Figure 7.
Normalized avalanche power
derating versus junction
temperature
Figure 8.
Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMB
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
Z
th(j-a)
/R
th(j-a)
1.0
SMB
0.9
0.8
0.7
0.8
0.6
0.4
0.2
0.6
0.5
0.4
0.3
0.2
T
Single pulse
T
j
(°C)
0
25
50
75
100
125
150
0.1
0.0
t
p
(s)
1.E-01
1.E+00
1.E+01
δ
=tp/T
1.E+02
tp
1.E+03
1.E-02
Figure 9.
Relative variation of thermal
impedance junction to lead
versus pulse duration - SMB flat
Figure 10. Reverse leakage current versus
reverse voltage applied (typical
values)
I
R
(mA)
1.E+02
T
j
=150°C
Z
th(j-l)
/R
th(j-l)
1.0
SMB flat
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Single pulse
1.E+01
T
j
=125°C
T
j
=100°C
1.E+00
1.E-01
1.E-02
T
j
=25°C
t
p
(s)
1.E-03
0
5
10
V
R
(V)
15
20
25
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 12. Forward voltage drop versus
forward current (typical values)
I
FM
(A)
10.0
T
j
=125°C
T
j
=150°C
T
j
=25°C
100
1.0
V
R
(V)
10
1
10
100
0.1
0.0
0.1
0.2
0.3
V
FM
(V)
0.4
0.5
0.6
4/9
STPS2L25
Characteristics
Figure 13. Forward voltage drop versus
forward current (maximum values,
high level)
10.0
Figure 14. Forward voltage drop versus
forward current (maximum values,
low level)
3.0
I
FM
(A)
I
FM
(A)
2.5
T
j
=125 °C
(maximum values)
2.0
T
j
=125 °C
(maximum values)
1.0
T
j
=125 °C
(typical values)
1.5
T
j
=125 °C
(typical values)
T
j
=25 °C
(maximum values)
T
j
=25 °C
(maximum values)
1.0
0.5
V
FM
(V)
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
FM
(V)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Figure 15. Thermal resistance junction to
ambient versus copper surface
under each lead (epoxy printed
board FR4, e
CU
=35µm)
R
th(j-a)
(°C/W)
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
SMB flat
SMB
S
CU
(Cm²)
5/9
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
