DHG 50 X 1200 NA
preliminary
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
V
RRM
= 1200 V
I
FAV
= 2x 25 A
t
rr
=
200 ns
DHG 50 X 1200 NA
Backside: Isolated
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
●
Housing: SOT-227B (minibloc)
●rIndustry
standard outline
●rCu
base plate internal DCB isolated
●rIsolation
Voltage 3000 V
●rEpoxy
meets UL 94V-0
●rRoHS
compliant
Ratings
Symbol
V
RRM
I
R
V
F
Definition
max. repetitive reverse voltage
reverse current
Conditions
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
I
F
=
I
F
=
25 A
50 A
25 A
50 A
d = 0.5
T
C
= 65°C
T
VJ
= 150°C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
min.
typ.
max.
1200
30
0.5
2.11
2.74
2.09
2.88
25
1.23
30
1.20
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
forward voltage
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
t
rr
C
J
average forward current
threshold voltage
slope resistance
rectangular
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
-40
T
C
= 25 °C
t = 10 ms (50 Hz), sine
I
F
=
30 A; V
R
= 600 V
T
VJ
= 45°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= 125°C
T
VJ
= 25 °C
-di
F
/dt = 600 A/µs
V
R
= 600 V; f = 1 MHz
23
30
200
350
11
150
100
200
reverse recovery time
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110526b
© 2011 IXYS all rights reserved
DHG 50 X 1200 NA
preliminary
Ratings
Symbol
I
RMS
R
thCH
T
stg
Weight
M
D
M
T
V
ISOL
d
Spp/App
d
Spb/Apb
mounting torque
terminal torque
isolation voltage
t = 1 second
t = 1 minute
creepage | striking distance on surface | through air
creepage | striking distance on surface | through air
terminal to terminal
terminal to backside
Definition
RMS current
thermal resistance case to heatsink
storage temperature
Conditions
per terminal
min.
typ.
0.10
max.
100
Unit
A
K/W
°C
g
Nm
Nm
V
V
mm
mm
-40
30
1.1
1.1
3000
2500
10.5
8.6
3.2
6.8
150
1.5
1.5
Part number
D
H
G
50
X
1200
NA
=
=
=
=
=
=
=
Diode
Sonic Fast Recovery Diode
extreme fast
Current Rating [A]
Parallel legs
Reverse Voltage [V]
SOT-227B (minibloc)
Product Marking
Logo
YYWW Z
abcde
XXXXXX
Part No.
Assembly Code
DateCode
Assembly Line
Ordering
Standard
Part Name
DHG 50 X 1200 NA
Marking on Product
DHG50X1200NA
Delivering Mode
Tube
Base Qty Code Key
10
507766
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110526b
© 2011 IXYS all rights reserved
DHG 50 X 1200 NA
preliminary
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110526b
© 2011 IXYS all rights reserved
DHG 50 X 1200 NA
preliminary
60
50
40
7
T
VJ
= 125°C
6
5
V
R
= 600 V
60 A
I
F
30
Q
rr
4
30 A
[A]
20
T
VJ
= 125°C
T
VJ
= 25°C
[µC]
3
15 A
10
0
0.0
2
1
300
0.5
1.0
1.5
2.0
2.5
3.0
400
500
600
700
800
900 1000 1100
V
F
[V]
Fig. 1 Typ. Forward current versus V
F
70
60
50
T
VJ
= 125°C
V
R
= 600 V
30 A
60 A
di
F
/dt
[A/µs]
Fig. 2 Typ. reverse recov.charge Q
rr
vs. di/dt
700
600
500
T
VJ
= 125°C
V
R
= 600 V
I
RR
[A]
40
15 A
t
rr
400
30
20
10
0
300
[ns]
300
200
100
0
300
60 A
30 A
15 A
400
500
600
700
800
900 1000 1100
400
500
600
700
800
900 1000 1100
di
F
/dt
[A/µs]
Fig. 3 Typ. peak reverse current I
RM
vs. di/dt
2.0
T
VJ
= 125°C
V
R
= 600 V
1.6
60 A
2
di
F
/dt
[A/µs]
Fig.4 Typ. recovery time t
rr
versus di/dt
1
E
rec
1.2
[mJ]
0.8
30 A
Z
thJC
15 A
[K/W]
i
1
2
3
4
0.01
0.1
0.4
0.0
300
400
500
600
700
800
900 1000 1100
0.1
0.001
R
i
0.3413
0.2171
0.3475
0.2941
1
i
0.0025
0.03
0.03
0.08
10
di
F
/dt
[A/µs]
Fig. 5 Typ. recovery energy E
rec
versus di/dt
t
p
[s]
Fig. 6 Typ. transient thermal impedance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110526b
© 2011 IXYS all rights reserved
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