VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base 2
common
cathode
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
Anode
TO-220AB
Anode
2
1 Common 3
cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-220AB
2 x 15 A
25 V, 30 V
0.40 V
97 mA at 125 °C
150 °C
Common cathode
13 mJ
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
25/30
900
0.40
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VS-32CTQ025PbF VS-32CTQ025-N3 VS-32CTQ030PbF VS-32CTQ030-N3
UNITS
V
R
V
RWM
25
25
30
30
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 115 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
900
250
13
3
mJ
A
A
UNITS
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 11-Oct-11
Document Number: 94202
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop
See fig. 1
V
FM (1)
30 A
15 A
30 A
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.49
0.58
0.40
0.53
1.75
97
0.233
9.09
1300
8.0
10 000
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 150
3.25
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
Marking device
32CTQ025
32CTQ030
Revision: 11-Oct-11
Document Number: 94202
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (mA)
100
10
1
0.1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 50 °C
0.01
0.001
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1
P
DM
t
1
0.01
Single pulse
(thermal resistance)
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
0.001
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 11-Oct-11
Document Number: 94202
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
160
Allowable Case Temperature (°C)
Average Power Loss (W)
150
140
130
120
110
100
90
80
0
5
10
15
20
25
See note (1)
Square
wave
(D = 0.50)
80
% rated
V
R
applied
DC
8
6
4
DC
2
0
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
Revision: 11-Oct-11
Document Number: 94202
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
32
2
C
3
T
4
Q
5
030 PbF
6
7
Vishay Semiconductors product
Current rating (30 A)
Circuit configuration:
C = Common cathode
Package:
T = TO-220
-
-
-
Schottky “Q” series
Voltage ratings
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
025 = 25 V
030 = 30 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-32CTQ025PbF
VS-32CTQ025-N3
VS-32CTQ030PbF
VS-32CTQ030-N3
QUANTITY PER T/R
50
50
50
50
MINIMUM ORDER QUANTITY
1000
1000
1000
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-220AB PbF
TO-220AB -N3
www.vishay.com/doc?95222
www.vishay.com/doc?95225
www.vishay.com/doc?95028
Revision: 11-Oct-11
Document Number: 94202
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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