Si4884DY
Vishay Siliconix
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.0105 @ V
GS
= 10 V
0.0165 @ V
GS
= 4.5 V
I
D
(A)
12
10
D D
D D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4884DY
Si4884DY-T1 (with Tape and Reel)
8
7
6
5
D
D
D
D
N-Channel MOSFET
G
S
S
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
12
10
50
2.3
2.95
1.9
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient (MOSFET)
a
Junction-to-Ambient
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t
v
10 sec.
Document Number: 70946
S-03950—Rev. C, 26-May-03
www.vishay.com
t
v
10 sec
R
thJA
Steady State
R
thJF
Symbol
Typical
35
68
18
Maximum
42
80
23
Unit
_C/W
C/W
2-1
Si4884DY
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 12 A
I
S
= 2.3 A, V
GS
= 0 V
40
0.0086
0.0135
26
0.74
1.1
0.0105
0.0165
S
V
1.0
"100
1
5
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.3 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
0.5
13
7
55
16
40
V
DS
= 15 V, V
GS
= 5.0 V, I
D
= 12 A
15.3
5.8
4.8
2.2
20
12
82
30
70
ns
W
20
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
50
Transfer Characteristics
40
I
D
- Drain Current (A)
V
GS
= 10 thru 4 V
I
D
- Drain Current (A)
40
30
30
20
3V
10
0- 2 V
0
0
2
4
6
8
10
20
T
C
= 125_C
10
25_C
0
0.0
- 55_C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
www.vishay.com
2-2
Document Number: 70946
S-03950—Rev. C, 26-May-03
Si4884DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.030
2500
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.025
C - Capacitance (pF)
2000
C
iss
0.020
V
GS
= 4.5 V
0.015
V
GS
= 10 V
1500
1000
C
oss
500
C
rss
0
0.010
0.005
0.000
0
10
20
30
40
50
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 12 A
1.8
1.6
r
DS(on)
- On-Resistance (
W)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0
0
5
10
15
20
25
30
0.4
- 50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 12 A
8
6
4
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
50
0.06
On-Resistance vs. Gate-to-Source Voltage
0.05
r
DS(on)
- On-Resistance (
W
)
I
S
- Source Current (A)
0.04
10
T
J
= 150_C
0.03
T
J
= 25_C
0.02
I
D
= 12 A
0.01
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 70946
S-03950—Rev. C, 26-May-03
www.vishay.com
2-3
Si4884DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
V
GS(th)
Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
10
- 0.8
- 1.0
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
30
T
J
- Temperature (_C)
Power (W)
40
I
D
= 250
mA
60
50
Single Pulse Power
30
20
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 68_C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (sec)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
2-4
Document Number: 70946
S-03950—Rev. C, 26-May-03
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
