Bipolar Transistors - BJT
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | ON Semiconductor(安森美) |
| 产品种类 Product Category | Bipolar Transistors - BJT |
| RoHS | N |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-220-3 |
| Transistor Polarity | PNP |
| Configuration | Single |
| Collector- Emitter Voltage VCEO Max | - 100 V |
| Collector- Base Voltage VCBO | - 100 V |
| Emitter- Base Voltage VEBO | - 7 V |
| Collector-Emitter Saturation Voltage | - 0.6 V |
| Maximum DC Collector Current | 7 A |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 150 C |
| DC Current Gain hFE Max | 200 |
| 高度 Height | 9.4 mm |
| 长度 Length | 10.1 mm |
| 系列 Packaging | Tube |
| 宽度 Width | 4.7 mm |
| DC Collector/Base Gain hfe Min | 40 |
| Pd-功率耗散 Pd - Power Dissipation | 40 W |
| 工厂包装数量 Factory Pack Quantity | 1000 |
| 单位重量 Unit Weight | 0.080072 oz |
| KSA1010YTU_Q | KSA1010RTU | KSA1010OTU | KSA1010Y | |
|---|---|---|---|---|
| 描述 | Bipolar Transistors - BJT | Bipolar Transistors - BJT PNP Epitaxial Sil | TRANS PNP 100V 7A TO-220 | TRANS PNP 100V 7A TO-220 |
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