HMC356LP3
/
356LP3E
v02.0605
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC356LP3 / HMC356LP3E is ideal for
basestation receivers:
• GSM 450 & GSM 480
• CDMA 450
• Private Land Mobile Radio
Features
Noise Figure: ≤1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0V @ 104 mA
50 Ohm Matched Output
Functional Diagram
General Description
The HMC356LP3 & HMC356LP3E are high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers
is ideal for GSM & CDMA cellular basestation and
Mobile Radio front-end receivers operating between
350 and 550 MHz. This LNA has been optimized to
provide 1.0 dB noise figure, 17 dB gain and +38 dBm
output IP3 from a single supply of +5.0V @ 104 mA.
Input and output return losses are 15 dB typical, with
the LNA requiring only four external components to
optimize the RF input match, RF ground and DC bias.
The HMC356LP3 & HMC356LP3E share the same
package and pinout with the HMC372LP3 high IP3
LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN
package houses the low noise amplifier.
Electrical Specifications,
T
A
= +25° C, Vs = +5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
34
17
15
Min.
Typ.
350 - 550
17
0.0032
1.0
17
12
24
21
22.5
38
104
0.010
1.4
Max.
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
5 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC356LP3
/
356LP3E
v02.0605
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
1.75
2
S21
S11
S22
Noise Figure vs. Temperature
1.5
1.4
1.3
NOISE FIGURE (dB)
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.3
0.35
0.4
0.45
0.5
0.55
0.6
+25 C
+85 C
-40 C
5
AMPLIFIERS - SMT
FREQUENCY (GHz)
Gain vs. Temperature
20
19
18
17
GAIN (dB)
16
15
14
13
12
11
10
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
+25 C
+85 C
-40 C
Noise Figure vs. Vdd
1.5
1.4
1.3
NOISE FIGURE (dB)
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.3
0.35
0.4
0.45
0.5
0.55
0.6
+4.5 V
+5.0 V
+5.5 V
FREQUENCY (GHz)
Gain vs. Vdd
20
19
18
Reverse Isolation
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
+25 C
+85 C
-40 C
17
GAIN (dB)
16
15
14
13
12
11
10
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
+5.0 V
+4.5 V
+5.5 V
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 91
HMC356LP3
/
356LP3E
v02.0605
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
5
AMPLIFIERS - SMT
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
+25 C
+85 C
-40 C
-5
RETURN LOSS (dB)
+25 C
+85 C
-40 C
-10
-10
-15
-15
-20
-20
-25
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
-25
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
Output IP3 vs. Temperature
42
41
P1dB & Psat vs. Temperature
26
25
COMPRESSION (dBm)
24
23
22
21
20
19
18
17
16
0.3
0.35
0.4
0.45
0.5
0.55
0.6
P1dB
+25 C
+85 C
-40 C
PSAT
40
OUTPUT IP3 (dBm)
39
38
37
36
35
34
33
32
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
+25 C
+85 C
-40 C
FREQUENCY (GHz)
Output IP3 vs. Vdd
42
41
P1dB vs. Vdd
26
25
COMPRESSION (dBm)
24
23
22
21
20
19
18
17
16
0.3
0.35
0.4
0.45
+4.5 V
+5.0 V
+5.5 V
40
OUTPUT IP3 (dBm)
39
38
37
36
35
34
33
32
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
+4.5 V
+5.0 V
+5.5 V
0.5
0.55
0.6
FREQUENCY (GHz)
5 - 92
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC356LP3
/
356LP3E
v02.0605
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
103
104
105
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+8.0 Vdc
+15 dBm
150 °C
0.910 W
71.4 °C/W
-65 to +150 °C
-40 to +85 °C
5
AMPLIFIERS - SMT
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC356LP3
HMC356LP3E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
356
XXXX
356
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 93
HMC356LP3
/
356LP3E
v02.0605
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
5
AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 5, 8,
9,10,12,13,14
Function
N/C
Description
No connection necessary.
These pins may be connected to RF/DC ground.
These pins and package ground paddle
must be connected to RF/DC ground.
This pin is matched to 50 Ohms with a 51 nH
inductor to ground. See Application Circuit.
Interface Schematic
2, 4, 6,16
GND
3
RF IN
7
ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11
RF OUT
This pin is AC coupled and matched to 50 Ohms.
15
Vdd
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
Application & Evaluation PCB Circuit
Note 1: Choose value of capacitor C1 for low frequency
bypassing. A 0.01 μF ±10% capacitor is recommended.
Note 2: L1, L2 and C1 should be located as close to pins as
possible.
5 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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