MIXA225PF1200TSF
preliminary
XPT IGBT Module
V
CES
I
C25
= 2x 1200 V
=
360 A
1.8 V
V
CE(sat)
=
Phase leg + free wheeling Diodes + NTC
Part number
MIXA225PF1200TSF
Backside: isolated
5
2
1
8
7
9
3
4
6
10/11
Features / Advantages:
●
High level of integration - only one
power semiconductor module required
for the whole drive
●
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
●
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
●
Temperature sense included
●
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Applications:
●
AC motor drives
●
Pumps, Fans
●
Air-conditioning system
●
Inverter and power supplies
●
UPS
Package:
SimBus F
●
Isolation Voltage: 3000 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Height: 17 mm
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20121102b
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
IGBT
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
RBSOA
I
CM
SCSOA
t
SC
I
SC
R
thJC
R
thCH
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
collector emitter saturation voltage
Ratings
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
Conditions
T
VJ
=
25°C
min.
typ.
max.
1200
±20
±30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
µA
nC
ns
ns
ns
ns
mJ
mJ
T
C
= 25°C
T
C
= 80 °C
T
C
= 25°C
I
C
= 225 A; V
GE
= 15 V
I
C
=
9 mA; V
GE
= V
CE
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125 °C
0.3
5.4
1.8
2.1
5.9
360
250
1100
2.1
6.5
0.3
1.5
690
60
70
280
310
20
27
gate emitter threshold voltage
collector emitter leakage current
V
CE
= V
CES
; V
GE
= 0 V
V
GE
= ±20 V
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
V
CE
= 600 V; V
GE
= 15 V; I
C
= 225 A
inductive load
V
CE
=
600 V; I
C
= 225 A
V
GE
= ±15 V; R
G
= 3.3
Ω
T
VJ
= 125 °C
V
GE
= ±15 V; R
G
= 3.3
Ω
V
CEmax
= 1200 V
V
CEmax
= 1200 V
V
CE
= 900 V; V
GE
= ±15 V
R
G
= 3.3
Ω;
non-repetitive
T
VJ
= 125 °C
500
T
VJ
= 125 °C
900
0.05
10
A
µs
A
0.115 K/W
K/W
Diode
V
RRM
I
F25
I
F 80
V
F
I
R
Q
rr
I
RM
t
rr
E
rec
R
thJC
R
thCH
forward voltage
max. repetitive reverse voltage
forward current
T
VJ
= 25°C
T
C
= 25°C
T
C
= 80 °C
I
F
= 225 A
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= 125°C
1.70
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
-di
F
/dt = 3300 A/µs
I
F
= 225 A; V
GE
= 0 V
T
VJ
= 125°C
*
32
250
340
11.7
0.05
1200
265
185
2.10
*
V
A
A
V
V
mA
mA
µC
A
ns
mJ
reverse current
* not applicable, see Ices value above
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
0.145 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20121102b
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
Package
Symbol
I
RMS
T
stg
T
VJ
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
R
pin-chip
mounting torque
terminal torque
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second
t = 1 minute
resistance pin to chip
50/60 Hz, RMS; I
ISOL
≤
1 mA
terminal to terminal
terminal to backside
SimBus F
Definition
RMS current
storage temperature
virtual junction temperature
Ratings
Conditions
per terminal
min.
-40
-40
typ.
max.
125
150
Unit
A
°C
°C
g
Nm
Nm
mm
mm
V
V
350
3
3
12.7
10.0
3000
2500
0.65
6
6
V = V
CEsat
+ 2·R·I
C
resp. V = V
F
+ 2·R·I
F
mΩ
2D Data Matrix
Part number
M
I
X
A
225
PF
1200
T
SF
=
=
=
=
=
=
=
=
=
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Phase leg + free wheeling Diodes
Reverse Voltage [V]
Thermistor \ Temperature sensor
SimBus F
XXX XX-XXXXX
Logo
UL
Part number
YYWWx
Date Code Location
Ordering
Standard
Part Number
MIXA225PF1200TSF
Marking on Product
MIXA225PF1200TSF
Delivery Mode
Box
Quantity
3
Code No.
512257
10
5
Temperature Sensor NTC
Symbol
R
25
B
25/50
Definition
resistance
temperature coefficient
Conditions
T
VJ
= 25°
min.
4.75
typ.
5
3375
max.
5.25
Unit
kΩ
K
10
4
R
[ ]
10
3
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
* on die level
T
VJ
= 150 °C
IGBT
Diode
10
2
0
25
50
75
100
T
C
[°C]
125
150
V
0 max
R
0 max
1.1
6
1.19
8.9
V
mΩ
Typ. NTC resistance vs. temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20121102b
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
Outlines SimBus F
1,2
20,5
17
64,4
60,59
37,73
33,92
87,26
11,06
7,25
0
7,75
9
10
87
65
4
0,46
0
3,75
R2,5
57,5
62
50
22
11
12
3
57,96
94,5
110
122
137
152
5
2
1
8
7
9
3
4
6
10/11
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20121102b
© 2012 IXYS all rights reserved
0,8
MIXA225PF1200TSF
preliminary
IGBT
450
400
350
300
V
GE
= 15 V
450
400
350
300
V
GE
= 15 V
17 V
19 V
13 V
400
11 V
300
T
VJ
= 125°C
I
C
250
200
I
C
250
T
VJ
= 25°C
T
VJ
= 125°C
I
C
200
[A]
[A]
200
150
100
50
0
150
100
50
0
0
1
[A]
9V
T
VJ
= 125°C
100
T
VJ
= 25°C
0
2
3
0
1
2
3
4
5
6
7
8
9
10
11
12
V
CE
[V]
Fig. 1 Typ. output characteristics
V
CE
[V]
Fig. 2 Typ. output characteristics
V
GE
[V]
Fig. 3 Typ. transfer characteristics
20
50
125
R
G
= 3.3
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
r
70
60
R
G
= 3.3
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
700
600
500
I
C
= 225 A
V
CE
= 600 V
15
40
100
50
t
t
d(on)
75
V
GE
10
E
30
E
40
30
20
t
400
[ns] [mJ]
50
t
d(off)
t
f
10
[ns]
300
200
100
E
off
0
100
200
300
400
0
500
[V]
5
[mJ]
20
E
on
10
25
0
0
200
400
600
800
0
0
E
rec(off)
100
200
300
400
0
500
0
Q
G
[nC]
Fig. 4 Typ. turn-on gate charge
I
C
[A]
Fig. 5 Typ. switching energy
versus collector current
30
150
30
E
off
t
d
(on)
I
C
[A]
Fig. 6 Typ. switching energy
versus collector current
600
0.12
0.10
0.08
I
C
= 225 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
t
E
20
t
r
100
Z
thJC
0.06
E
off
20
[K/W]
0.04
0.02
0.00
0.001
[mJ]
I
C
= 225 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
t
d
(off)
400
[ns]
[mJ]
t
f
[ns]
10
0.01
0.1
1
10
E
rec(on)
4
6
8
10
50
10
4
6
8
10
200
t [s]
Fig. 7 Typical transient thermal
impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
R
G
[ ]
Fig. 8 Typ. switching energy
versus gate resistance
R
G
[ ]
Fig. 9 Typ. switching energy
versus gate resistance
20121102b
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
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