CY62156ESL MoBL
®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
■
■
■
High Speed: 45 ns
Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
Ultra Low Standby Power
❐
Typical standby current: 2
A
❐
Maximum standby current: 8
A
Ultra Low Active Power
❐
Typical active current: 1.8 mA at f = 1 MHz
Easy Memory Expansion with CE
1
, CE
2
, and OE Features
Automatic Power Down when Deselected
CMOS for Optimum Speed and Power
Available in Pb-free 48-ball very fine-pitch ball grid array
(VFBGA) packages
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Place the device
in standby mode when deselected (CE
1
HIGH or CE
2
LOW). The
input or output pins (I/O
0
through I/O
15
) are placed in a high
impedance state when the device is deselected (CE
1
HIGH or
CE
2
LOW), the outputs are disabled (OE HIGH), Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or
a write operation is active (CE
1
LOW, CE
2
HIGH and WE LOW).
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
) is
written into the location specified on the address pins (A
0
through
A
18
). If Byte High Enable (BHE) is LOW, then data from I/O pins
(I/O
8
through I/O
15
) is written into the location specified on the
address pins (A
0
through A
18
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data
from the memory location specified by the address pins appear
on I/O
0
to I/O
7
. If Byte High Enable (BHE) is LOW, then data from
memory appears on I/O
8
to I/O
15
. See the
Truth Table on page
11
for a complete description of read and write modes.
For a complete list of related documentation,
click here.
■
■
■
■
■
Functional Description
The CY62156ESL is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life (MoBL
®
) in portable
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
512 K × 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
11
A
12
A
13
A
15
A
17
A
14
A
16
A
18
Cypress Semiconductor Corporation
Document Number: 001-54995 Rev. *F
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised November 28, 2014
CY62156ESL MoBL
®
Contents
Pin Configurations ........................................................... 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagrams .......................................................... 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 16
Worldwide Sales and Design Support ....................... 16
Products .................................................................... 16
PSoC® Solutions ...................................................... 16
Cypress Developer Community ................................. 16
Technical Support ..................................................... 16
Document Number: 001-54995 Rev. *F
Page 2 of 16
CY62156ESL MoBL
®
Pin Configurations
Figure 1. 48-ball VFBGA pinout (Top View)
[1]
1
BLE
I/O
8
I/O
9
2
OE
BHE
I/O
10
3
A
0
A
3
A
5
A
17
NC
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
CE
2
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
V
SS
I/O
11
V
CC
I/O
12
I/O
14
I/O
13
A
14
I/O
15
A
18
NC
A
8
A
12
A
9
Product Portfolio
Power Dissipation
Product
Range
V
CC
Range (V)
[2]
Speed
(ns)
Operating I
CC
, (mA)
f = 1MHz
Typ
[3]
CY62156ESL
Industrial
2.2 V to 3.6 V and 4.5 V to 5.5 V
45
1.8
Max
3
f = f
max
Typ
[3]
18
Max
25
Standby, I
SB2
(A)
Typ
[3]
2
Max
8
Notes
1. NC pins are not connected on the die.
2. Datasheet specifications are not guaranteed for V
CC
in the range of 3.6 V to 4.5 V.
3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
Document Number: 001-54995 Rev. *F
Page 3 of 16
CY62156ESL MoBL
®
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 °C to + 150°C
Ambient Temperature with
Power Applied ........................................ –55 °C to + 125 °C
Supply Voltage to Ground Potential ...............–0.5 V to 6.0 V
DC Voltage Applied to Outputs
in High Z State
[4, 5]
........................................–0.5 V to 6.0 V
DC Input Voltage
[4, 5]
....................................–0.5 V to 6.0 V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) ................................. > 2,001V
Latch Up Current ................................................... > 200 mA
Operating Range
Device
CY62156ESL
Range
Industrial
Ambient
Temperature
V
CC
[6]
–40 °C to +85 °C 2.2 V to 3.6 V,
and
4.5 V to 5.5 V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Output HIGH Voltage
Test Conditions
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
OL
Output LOW Voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
IH
Input HIGH Voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
IL
Input LOW Voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
I
IX
I
OZ
I
CC
Input Leakage Current
Output Leakage Current
V
CC
Operating Supply Current
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
f = f
max
= 1/t
RC
f = 1 MHz
I
SB1
Automatic CE Power down
Current – CMOS Inputs
V
CC
= V
CCmax
,
I
OUT
= 0 mA,
CMOS levels
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1mA
I
OL
= 2.1mA
45 ns
Min
2.0
2.4
2.4
–
–
–
1.8
2.2
2.2
–0.3
–0.3
–0.5
–1
–1
–
–
–
Typ
[1]
–
–
–
–
–
–
–
–
–
–
–
–
–
–
18
1.8
2
Max
–
–
–
0.4
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.5
0.6
0.8
0.8
+1
+1
25
3
8
A
A
A
mA
V
V
V
Unit
V
CE
1
> V
CC
0.2
V, CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = f
max
(Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
V
CC
= V
CC(max)
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= V
CC(max)
I
SB2 [7]
Automatic CE Power down
Current – CMOS Inputs
–
2
8
A
Notes
4. V
IL
(min) = –2.0 V for pulse durations less than 20 ns.
5. V
IH
(max) = V
CC
+ 0.75 V for pulse durations less than 20 ns.
6. Full Device AC operation assumes a 100
s
ramp time from 0 to V
CC
(min) and 200
s
wait time after V
CC
stabilization.
7. Only chip enables (CE
1
and CE
2
) need to be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document Number: 001-54995 Rev. *F
Page 4 of 16
CY62156ESL MoBL
®
Capacitance
Parameter
[8]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[8]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit
board
48-ball BGA
72
8.86
Unit
C/W
C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
V
CC
OUTPUT
R1
V
CC
10%
GND
R2 Rise Time = 1 V/ns
Equivalent to:
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
30 pF
INCLUDING
JIG AND
SCOPE
THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
TH
Parameters
R1
R2
R
TH
V
TH
2.5 V
16667
15385
8000
1.20
3.0 V
1103
1554
645
1.75
5.0 V
1800
990
639
1.77
Unit
V
Note
8. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-54995 Rev. *F
Page 5 of 16
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
