SUD50P04-15
New Product
Vishay Siliconix
P-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
–40
r
DS(on)
(W)
0.015 @ V
GS
= –10 V
0.023 @ V
GS
= –4.5 V
I
D
(A)
–50
–45
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD50P04-15
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–40
"20
–50
–40
Unit
V
A
–150
–50
100
b
3
a
–55 to 175
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
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FaxBack 408-970-5600
t
v
10 sec.
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
1
SUD50P04-15
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –40 V, V
GS
= 0 V
V
DS
= –40 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= –30 A
Drain-Source On-State Resistance
a
D i S
O S
R i
r
DS(on)
V
GS
= –10 V, I
D
= –30 A, T
J
= 125_C
V
GS
= –4.5 V, I
D
= –20 A
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –30 A
20
0.018
–120
0.012
0.015
0.024
0.023
S
W
–40
V
–1.0
"100
–1
–50
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –20 V, R
L
= 0 4
W
20 V,
0.4
I
D
^
–50 A, V
GEN
= –10 V R
G
= 2 5
W
50 A
10 V,
2.5
V
DS
= –20 V V
GS
= –10 V I
D
= –50 A
20 V,
10 V,
50
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
5400
640
300
85
25
15
15
380
75
140
25
580
ns
115
210
130
nC
C
pF
F
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
a
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= –50 A, V
GS
= 0 V
I
F
= –50 A, di/dt = 100 A/ms
–1.2
40
–150
–1.5
80
A
V
ns
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 71176
S-00830—Rev. A, 24-Apr-00
SUD50P04-15
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10, 9, 8 V
200
I
D
– Drain Current (A)
I
D
– Drain Current (A)
7V
6V
80
25_C
150
5V
100
60
125_C
T
C
= –55_C
100
Vishay Siliconix
Transfer Characteristics
40
50
4V
2, 3 V
20
0
0
2
4
6
8
10
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
80
T
C
= –55_C
25_C
g
fs
– Transconductance (S)
60
r
DS(on)
– On-Resistance (
Ω
)
125_C
0.03
0.04
On-Resistance vs. Drain Current
V
GS
= 4.5 V
40
0.02
V
GS
= 10 V
0.01
20
0
0
20
40
60
80
100
0
0
20
40
60
80
100
120
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
8000
20
Gate Charge
V
GS
– Gate-to-Source Voltage (V)
6000
C – Capacitance (pF)
C
iss
16
V
DS
= 20 V
I
D
= 50 A
12
4000
8
2000
C
oss
C
rss
4
0
0
5
10
15
20
25
30
0
0
40
80
120
160
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71176
S-00830—Rev. A, 24-Apr-00
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FaxBack 408-970-5600
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SUD50P04-15
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
2.0
I
S
– Source Current (A)
100
Source-Drain Diode Forward Voltage
1.5
T
J
= 150_C
T
J
= 25_C
10
1.0
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
60
500
Safe Operating Area
50
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
Limited
by r
DS(on)
10
ms
100
ms
40
30
10
1 ms
10 ms
100 ms
dc
T
C
= 25_C
Single Pulse
20
1
10
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
t
1
0.02
0.05
Single Pulse
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 40_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
30
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FaxBack 408-970-5600
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Document Number: 71176
S-00830—Rev. A, 24-Apr-00
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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